IP Library › Assignment 018545/0426
Patent Assignment
Reel/Frame 018545/0426

Assignment of Assignor's Interest

Recorded: 2006-11-22 Received: 2006-11-22 Pages: 28
Assignor
Assignee
AVAGO TECHNOLOGIES SENSOR IP PTE. LTD.
NO. 1 YISHUN AVENUE 7, SINGAPORE, SGX, 768923, SINGAPORE
Covered Properties (36)
System and method for reducing read-out noise in a pixel array
Application: 11/142,166 →
Electronic Amplifier with Signal Gain Dependent Bias
Application: 11/105,752 →
System and Method of Electronic Image Shifting for Image Stabilization
Application: 11/084,464 →
Method and Apparatus for Detecting Failed Reset in Pixels of an Imager
Application: 11/048,479 →
Wire-Bondable Image Sensor Having Integral Contaminant Shadowing Reduction Structure
Application: 11/022,116 →
Multi-Lens Imaging Systems and Methods Using Optical Filters Having Mosaic Patterns
Application: 11/016,376 →
Optical Enhancement of Integrated Circuit Photodetectors
Application: 10/984,670 →
Cam-Locking Positioning Mechanism
Application: 10/870,215 →
Bubble Macro Mode Lens
Application: 10/853,997 →
Active pixel sensor array sampling system and method
Application: 10/798,994 →
Sample and Hold Circuit and Active Pixel Sensor Array Sampling System Utilizing Same
Application: 10/798,979 →
Semiconductor packaging structure
Application: 10/649,006 →
Image Sensor with Active Reset and Randomly Addressable Pixels
Application: 10/639,227 →
Circuit for an Active Pixel Sensor
Application: 10/630,647 →
Systems and Methods for Reducing Artifacts Caused by Illuminant Flicker
Application: 10/629,083 →
Method of Utilizing a Top Conductive Layer in Isolating Pixels of an Image Sensor Array
Application: 10/609,878 →
System, Method, and Computer Program Product for Applying Different Transport Mechanisms for User Interface and Image Portions of a Remotely Rendered Image
Application: 10/426,003 →
Compact Pixel Reset Circuits Using Reversed Current Readout
Application: 10/406,698 →
Wafer-Scale Manufacturing Method
Application: 10/402,721 →
System and Method for Reducing Trapped Charge Effects in a Cmos Photodetector
Application: 10/374,279 →
Isolation of Alpha Silicon Diode Sensors Through Ion Implantation
Application: 10/349,447 →
Cmos Image Sensor Using Gradient Index Chip Scale Lenses
Application: 10/260,186 →
CMOS image sensor using gradient index chip scale lenses
Application: 60/403,411 →
Low Noise Amplifier and Imaging Element Using Same
Application: 10/104,917 →
Ground Referenced Pixel Reset
Application: 10/051,739 →
Digital Image System and Method for Combining Sensing and Image Processing on Sensor with Two-Color Photo-Detector
Application: 10/043,464 →
Systems and Methods of Sampling a Photodetector and Photocell Circuits Incorporating the Same
Application: 09/994,036 →
Sequential Read-Out Method and System That Employs a Single Amplifier for Multiple Columns
Application: 09/981,957 →
Method for Reducing Coherent Row-Wise and Column-Wise Fixed Pattern Noise in Cmos Image Sensors
Application: 09/956,722 →
Avalanche Photodiode Array Biasing Device and Avalanche Photodiode Structure
Application: 09/885,906 →
Integrated Circuit Device Providing Isolation Between Adjacent Regions
Application: 09/863,854 →
Method of Manufacturing a Structure for Reducing Leakage Currents by Providing Isolation Between Adjacent Regions of an Integrated Circuit
Application: 09/863,851 →
System and Method for Correcting Erroneous Image Signals from Defective Photosensitive Pixels During Analog-to-Digital Conversion
Application: 09/827,942 →
Method for Testing Integrated Circuit Devices
Application: 09/814,497 →
Amorphous Semiconductor Open Base Phototransistor Array
Application: 09/795,608 →
Pixel with asymmetric transfer gate channel doping
Application: 11/323,693 →