Patent Assignment
Reel/Frame 019028/0605
Assignment of Assignor's Interest
Recorded: 2007-03-19
Pages: 6
Assignor
ADVANCED MICRO DEVICES, INC.
Executed: 2007-01-31
Assignee
SPANSION INC.
915 DEGUIGNE DRIVE, P.O. BOX 3453, MAIL STOP 250, SUNNYVALE, CALIFORNIA, 94088-3453
Covered Properties
(35)
Reduced Column Leakage During Programming for a Flash Memory Array
Patent:
5,579,261 →
Application:
08/426,716 →
Method for Decreasing the Discharge Time of a Flash Eprom Cell
Patent:
5,596,531 →
Application:
08/450,167 →
Flash Eeprom Memory with Improved Discharged Speed Using Substrate Bias and Method Therefor
Patent:
5,708,588 →
Application:
08/464,024 →
Nonvolatile Memory Cell with Vertical Gate Overlap and Zero Birds Beaks
Patent:
5,680,345 →
Application:
08/469,953 →
Method of Making Nonvolatile Memory Cell with Verical Gate Overlap and Zero Birds'beaks
Patent:
5,661,055 →
Application:
08/474,610 →
Nonvolatile Memory Cell Formed Using Self Aligned Source Implant
Patent:
5,656,513 →
Application:
08/474,879 →
Nonvolatile Memory Cell Formed Using Self Aligned Source Implant
Patent:
5,553,018 →
Application:
08/484,580 →
Method of Inhibiting Degradation of Ultra Short Channel Charge-Carrying Devices During Discharge
Patent:
5,650,964 →
Application:
08/486,192 →
Channel Hot-Carrier Page Write
Patent:
5,590,076 →
Application:
08/493,138 →
Isolation Using Self-Aligned Trench Formation and Conventional Locos
Patent:
5,679,599 →
Application:
08/493,640 →
Process for Self-Aligned Source for High Density Memory
Patent:
5,552,331 →
Application:
08/500,648 →
Three-Dimensional Non-Volatile Memory
Patent:
5,945,705 →
Application:
08/510,118 →
Correction Method Leading to a Uniform Threshold Voltage Distribution for a Flash Eprom
Patent:
5,608,672 →
Application:
08/534,141 →
Flash Eeprom Memory with Separate Reference Array
Patent:
5,629,892 →
Application:
08/543,684 →
Overerase Correction for Flash Memory Which Limits Overerase and Prevents Erase Verify Errors
Patent:
5,642,311 →
Application:
08/547,494 →
Program Algorithm for Low Voltage Single Power Supply Flash Memories
Patent:
5,644,531 →
Application:
08/551,705 →
Method of Eliminating or Reducing POLY1 Oxidation at Stacked Gate Edge in Flash Eprom Process
Patent:
5,789,295 →
Application:
08/559,082 →
Fast 3-State Booster Circuit
Patent:
5,708,387 →
Application:
08/560,459 →
Power Supply Independent Current Source for Flash Eprom Erasure
Patent:
5,680,348 →
Application:
08/566,204 →
Method of Forming a Silicon Gate to Produce Silicon Devices with Improved Performance
Patent:
5,981,364 →
Application:
08/568,195 →
Selectively Oxidized Field Oxide Region
Patent:
5,869,385 →
Application:
08/569,704 →
Simplified Process for Fabricating Flash Eeprom Cells
Patent:
5,776,811 →
Application:
08/582,720 →
Sourceless Floating Gate Memory Device and Method of Storing Data
Patent:
5,814,853 →
Application:
08/589,750 →
Parallel Page Buffer Verify or Read of Cells on a Word Line Using a Signal from a Reference Cell in a Flash Memory Device
Patent:
5,638,326 →
Application:
08/630,919 →
System for Constant Field Erasure in a Flash Eprom
Patent:
5,629,893 →
Application:
08/634,512 →
Multiple Bits Per-Cell Flash Eeprom Capable of Concurrently Programming and Verifying Memory Cells and Reference Cells
Patent:
5,712,815 →
Application:
08/635,995 →
Multiple Bits-Per-Cell Flash Shift Register Page Buffer
Patent:
5,724,284 →
Application:
08/669,116 →
Block Select Transistor and Method of Fabrication
Patent:
5,763,307 →
Application:
08/745,278 →
Method of Programming a Memory Cell to Contain Multiple Values
Patent:
5,831,901 →
Application:
08/745,596 →
Low Supply Voltage Negative Charge Pump
Patent:
5,973,979 →
Application:
08/774,307 →
System for Constant Field Erasure in a Flash Eprom
Patent:
5,805,502 →
Application:
08/795,024 →
A Bit Line Discharge Method for Reading a Multiple Bits-Per-Cell Flash Eeprom
Patent:
5,754,475 →
Application:
08/884,547 →
Double Density V Nonvolatile Memory Cell
Patent:
5,923,063 →
Application:
09/026,358 →
Process for Fabricating a Flash Memory Device
Patent:
6,248,629 →
Application:
09/040,823 →
Three-Dimensional Non-Volatile Memory
Patent:
6,043,122 →
Application:
09/334,393 →
Related Assignments
(15)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Dec 1, 1995
From: CHUNG, MICHAEL; YU, JAMES
To: ADVANCED MICRO DEVICES, INC.
Reel/Frame 008170/0270 →
Merger
Mar 16, 2004
From: VANTIS CORPORATION
To: LATTICE SEMICONDUCTOR
Reel/Frame 014428/0567 →
Assignment of Assignor's Interest
Mar 16, 2004
From: ADVANCED MICRO DEVICES
To: VANTIS CORPORATION
Reel/Frame 014428/0562 →
Assignment of Assignor's Interest
Mar 26, 2007
From: SPANSION INC.
To: SPANSION LLC
Reel/Frame 019063/0777 →
Security Agreement
Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →
Release of Security Interest
Mar 13, 2015
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 035201/0159 →
Security Interest
Mar 17, 2015
From: LATTICE SEMICONDUCTOR CORPORATION; SIBEAM, INC.; SILICON IMAGE, INC.; DVDO, INC.
To: JEFFERIES FINANCE LLC
Reel/Frame 035220/0048 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036018/0546 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036019/0001 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036018/0728 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036019/0518 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036019/0326 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036019/0156 →
Partial Release of Security Interest in Patents
Aug 11, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 039708/0001 →
Release of Security Interest
May 21, 2019
From: JEFFERIES FINANCE LLC
To: LATTICE SEMICONDUCTOR CORPORATION; SILICON IMAGE, INC.; SIBEAM, INC.; DVDO, INC.
Reel/Frame 049827/0326 →