Patent Assignment
Reel/Frame 019714/0907
Change of Name
Recorded: 2007-08-21
Received: 2007-08-21
Pages: 27
Assignor
RJ MEARS, LLC
Executed: 2007-03-14
Assignee
MEARS TECHNOLOGIES, INC.
1100 WINTER STREET, SUITE 4700, WALTHAM, MA, 02451, UNITED STATES
Covered Properties
(23)
Finfet Including a Superlattice
Application:
11/426,969 →
Method and Related System of Filling Therapeutic Gas Cylinders
Application:
11/157,708 →
Method for Making a Semiconductor Device Including Band-Engineered Superlattice Using Intermediate Annealing
Application:
11/136,834 →
Semiconductor Device Including a Superlattice with Regions Defining a Semiconductor Junction
Application:
11/097,433 →
Method for Making a Semiconductor Device Including a Superlattice and Adjacent Semiconductor Layer with Doped Regions Defining a Semiconductor Junction
Application:
11/096,828 →
Semiconductor Device Including a Superlattice and Adjacent Semiconductor Layer with Doped Regions Defining a Semiconductor Junction
Application:
11/097,588 →
Method for Making a Semiconductor Device Including a Superlattice with Regions Defining a Semiconductor Junction
Application:
11/097,612 →
Method for Making a Semiconductor Device Including Band-Engineered Superlattice Having 3/1-5/1 Germanium Layer Structure
Application:
10/992,422 →
Semiconductor Device Including Band-Engineered Superlattice Having 3/1-5/1 Germanium Layer Structure
Application:
10/992,186 →
Method for Making a Semiconductor Device Comprising a Superlattice Channel Vertically Stepped Above Source and Drain Regions
Application:
10/940,418 →
Method for Making an Integrated Circuit Comprising a Waveguide Having an Energy Band Engineered Superlattice
Application:
10/936,920 →
Configurable Aperiodic Grating Device
Application:
09/914,944 →
Method for Making Semiconductor Device Including Band-Engineered Superlattice
Application:
10/717,370 →
Semiconductor Device Including Band-Engineered Superlattice
Application:
10/716,994 →
Semiconductor Device Including Band-Engineered Superlattice
Application:
10/717,375 →
Semiconductor Device Including Band-Engineered Superlattice
Application:
10/717,374 →
Method for Making Semiconductor Device Including Band-Engineered Superlattice
Application:
10/716,991 →
Method for Making Semiconductor Device Including Band-Engineered Superlattice
Application:
10/716,783 →
Optical Filter Device with Aperiodically Arranged Grating Elements
Application:
10/683,888 →
Semiconductor Device Including Mosfet Having Band-Engineered Superlattice
Application:
10/647,069 →
Method for Making Semiconductor Device Including Band-Engineered Superlattice
Application:
10/647,061 →
Semiconductor Device Including Band-Engineered Superlattice
Application:
10/647,060 →
Farby-Perot Laser with Wavelength Control
Application:
10/064,002 →