Method for strengthening adhesion between dielectric layers formed adjacent to metal layers
View Patent ↗A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.
1. A method for processing a microelectronic topography, comprising:
selectively depositing a second dielectric layer upon a first dielectric layer of the microelectronic topography, wherein the first dielectric is arranged adjacent to and coplanar with a first metal layer of the microelectronic topography, and wherein the second dielectric layer comprises a hydrophobic material selected from a group comprising halogenated silanes and polymeric silanes;
exposing the microelectronic topography to deionized water to strengthen the adherence of the second dielectric layer to the first dielectric layer;
subsequently selectively depositing a second metal layer upon the first metal layer; and
removing the second dielectric layer subsequent to the step of selectively depositing the second metal layer.
2. A method for processing a microelectronic topography, comprising:
selectively depositing a second dielectric layer upon a first dielectric layer of the microelectronic topography, wherein the first dielectric is arranged adjacent to and coplanar with a first metal layer of the microelectronic topography, and wherein the second dielectric layer comprises a hydrophobic material selected from a group comprising halogenated silanes and polymeric silanes;
exposing the microelectronic topography to deionized water to strengthen the adherence of the second dielectric layer to the first dielectric layer; and
subsequently selectively depositing a second metal layer upon the first metal layer,
wherein the step of exposing the microelectronic topography to deionized water is conducted during the step of selectively depositing the second dielectric layer.