Shallow trench isolation structure with low trench parasitic capacitance
View Patent ↗Provided are methods and composition for forming an isolation structure on an integrated circuit substrate. First, a trench is etched in the integrated circuit substrate. A lower dielectric layer is then formed in the trench such that the lower dielectric layer at least partially fills the trench. An upper dielectric layer is then formed over the lower dielectric layer to create an isolation structure, the upper dielectric layer and the lower dielectric layer together having an effective dielectric constant that is less than that of silicon dioxide, thereby enabling capacitance associated with the isolation structure to be reduced.
1. An isolation structure formed on an integrated circuit substrate, comprising:
a lower dielectric layer substantially conforming to a trench in the integrated circuit substrate such that the lower dielectric layer partially fills the trench; and
an upper dielectric layer over the lower dielectric layer, the upper dielectric layer having an HF etch rate that is lower than that of Silicon dioxide, the upper dielectric layer and the lower dielectric layer together having an effective dielectric constant that is less than that of silicon dioxide.
2. The isolation structure as recited in claim 1 , wherein the upper dielectric layer is amorphous SiC.
3. An isolation structure formed on an integrated circuit substrate, comprising:
a silicon substrate having a trench formed therein, the trench having a trench liner that substantially conforms to the trench;
an isolation filler plug comprising,
a first dielectric layer formed on the trench liner such partially fills the trench and formed of a silicon oxycarbide (SiOC) material; and
a second dielectric layer formed over the first dielectric layer and formed of one of amorphous silicon carbide and silicon dioxide material to complete said isolation trench filler plug, wherein the thicknesses of the first and second dielectric layers are arranged so that an effective dielectric constant for the filler plug is less than that of silicon dioxide and such that the parasitic capacitance of the plug is less than that of silicon dioxide.
4. The isolation structure as recited in claim 3 , wherein the trench liner comprises silicon dioxide.
5. The isolation structure as recited in claim 3 , wherein the thickness of the upper dielectric layer is less than the thickness of the lower dielectric layer.
6. The isolation structure as recited in claim 3 , wherein the effective dielectric constant corresponds to at least one of horizontal and vertical capacitance associated with the isolation structure.
7. The isolation structure as recited in claim 3 , wherein the effective dielectric constant of the plug corresponds to relative thicknesses of both the first and second dielectric layers.
8. The isolation structure as recited in claim 3 , wherein a top surface of the upper dielectric layer lies at or below a top plane of the silicon substrate.
9. The isolation structure as recited in claim 3 , wherein the second dielectric layer comprises amorphous SiC.
10. The isolation structure as recited in claim 3 , wherein the second dielectric layer comprises silicon dioxide.