Temperature control method for photolithographic substrate
View Patent ↗The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.
1. A method for processing a photolithographic substrate, comprising:
placing said photolithographic substrate on a support member in a processing chamber, said photolithographic substrate having a high thermal mass, said photolithographic substrate having an initial temperature;
introducing a heat transfer fluid into said processing chamber;
cooling said photolithographic substrate through said heat transfer fluid to a target temperature; and
subjecting said cooled photolithographic substrate to a plasma process before the temperature of said cooled photolithographic substrate reaches said initial temperature, said photolithographic substrate having a temperature rise of less than approximately 3 degrees Celsius per minute during said plasma process.
2. The method according to claim 1 wherein said heat transfer fluid is introduced into said chamber at a rate of about one Torr per second.
3. The method according to claim 1 wherein said heat transfer fluid is a dry gas.
4. The method according to claim 1 wherein said heat transfer fluid is an inert gas.
5. The method according to claim 1 wherein said heat transfer fluid contains N 2 .
6. The method according to claim 1 wherein said support member holds said photolithographic substrate along the outer five millimeters of said photolithographic substrate.
7. The method according to claim 1 wherein said support member holds said photolithographic substrate through three points.
8. The method according to claim 1 wherein said initial temperature has a temperature range of about zero degrees Celsius to about fifty degrees Celsius.
9. The method according to claim 1 wherein said target temperature has a temperature range of less than about zero degrees Celsius to less than about minus forty degrees Celsius.
10. The method according to claim 1 wherein said target temperature has a temperature range of less than about minus thirty degrees Celsius.
11. A method for processing a photolithographic substrate, comprising:
placing said photolithographic substrate on a support member in a processing chamber, said photolithographic substrate having a thermal mass greater than 220 J/K;
introducing a heat transfer fluid into said processing chamber;
cooling said photolithographic substrate in said processing chamber through said heat transfer fluid to a first process set point; and
subjecting said cooled photolithographic substrate to a plasma process before the temperature of said cooled photolithographic substrate reaches a second process set point.
12. The method according to claim 11 wherein said heat transfer fluid is introduced into said processing chamber at a rate of about one Torr per second.
13. The method according to claim 11 wherein said heat transfer fluid is a dry gas.
14. The method according to claim 11 wherein said heat transfer fluid is an inert gas.
15. The method according to claim 11 wherein said heat transfer fluid contains N 2 .
16. The method according to claim 11 wherein said support member holds said photolithographic substrate along the outer five millimeters of said photolithographic substrate.
17. The method according to claim 11 wherein said support member holds said photolithographic substrate through three points.
18. The method according to claim 11 wherein said first process set point has a temperature range of less than about zero degrees Celsius to less than about minus forty degrees Celsius.
19. The method according to claim 11 wherein said first process set point has a temperature range of less than about minus thirty degrees Celsius.
20. The method according to claim 11 wherein said second process set point has a temperature range of about zero degrees Celsius to about twenty degrees Celsius.