Method and apparatus for measurement of beam angle in ion implantation
View Patent ↗An ion beam angle detection apparatus, comprising a linear drive assembly fixedly attached to a moveable profiler assembly, wherein the profiler assembly comprises, a profiler having a profiler aperture formed within a profiler top plate and a profiler sensor assembly, a moveable angle mask assembly comprising a moveable angle mask with a mask aperture, wherein the angle mask assembly is non-fixedly attached to the profiler assembly, the mask aperture is movable relative to the profiler aperture by energizing an mask linear drive fixedly attached to the profiler assembly and the profiler aperture is movable through a length greater than the elongated length of the ion beam.
1. A method for evaluating a ribbon shaped ion beam, comprising:
moving a profiler assembly having a profiler aperture across at least a portion of a width of the ribbon ion beam, wherein the profiler assembly is configured to generate a profiler signal that is a function of a portion of the ribbon ion beam that passes through the profiler aperture;
moving a mask having a mask aperture rapidly back and forth about the profiler assembly, wherein the mask is positioned between the incoming ribbon ion beam and the profiler assembly; and
collecting profiler signals as a function of time during travel of the profiler assembly across the width of the ribbon ion beam.
2. The method of claim 1 , further comprising determining a beam angle of the ribbon shaped ion beam along the width thereof based on the collected profiler signals.
3. A beam angle measurement assembly, comprising:
an ion beam profiler comprising a profiler aperture configured to selectively permit a portion of a ribbon shaped ion beam to pass therethrough and measure a beam current associated therewith, wherein the profiler is configured to translate laterally across a width of the ribbon shaped ion beam at a first translation rate; and an angle mask assembly comprising a mask aperture, wherein the angle mask assembly is positioned between the incoming ribbon shaped ion beam and the ion beam profiler, and is configured to translate laterally across the width of the ribbon shaped ion beam at a second translation rate that is different than the first translation rate, wherein the second translation rate is greater than the first translation rate.
4. The assembly of claim 3 , wherein the angle mask assembly is configured to translate back and forth a distance associated with a width of the ion beam profiler in a direction along a width of the ribbon ion beam as the ion beam profiler translates in the direction along the width of the ribbon ion beam.