IP Library Granted Patent US 7,898,295
Granted Patent B1
US 7,898,295 · App. 12/407,269 · Granted Mar 1, 2011

Hot-pluggable differential signaling driver

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Quick Facts
Patent No.
US 7,898,295
App. No.
12/407,269
Granted
Mar 1, 2011
Kind
B1
Abstract

Apparatus and methods provide low voltage differential signaling (LVDS) driver with replica circuit biasing and protection for hot plugging. The replica biasing is non-intrusive in nature, and can control the voltage swing tightly over parametric variations. The absence of an explicit near-end driver termination improves efficiency, while replica biasing controls output voltage swing levels. Hot-pluggable compatibility is achieved by a reduction in power-off leakage current and short circuit current protection.

Claims (52)

1. An apparatus for differential signaling, the apparatus comprising:

a replica bias circuit comprising a replica NMOS transistor and a replica PMOS transistor;

an explicit resistor having a resistance of about N times a characteristic impedance intended to be driven by a main driver circuit, wherein the explicit resistor is operatively coupled in a current path between sources of the replica NMOS transistor and the replica PMOS transistor, wherein N is greater than 1;

the main driver circuit comprising a driver NMOS transistor and a driver PMOS transistor and steering switches;

wherein the driver NMOS transistor is N times larger than the replica NMOS transistor, wherein a source of the driver NMOS transistor is configured to source current to a load via the steering switches;

wherein the driver PMOS transistor is N times larger than the replica PMOS transistor, and is configured to sink current from the load via the steering switches;

wherein outputs of the steering switches comprises a differential output of the main driver circuit, and wherein control of the steering switches controls the differential output data;

a biasing circuit configured to bias the replica NMOS transistor such that the source of the replica NMOS transistor is biased relative to a first reference level V HIGH and configured to bias the replica PMOS transistor such that the source of the replica PMOS transistor is biased relative to second reference level V LOW different from the first reference level, wherein gate and drain voltages of the replica NMOS transistor and the driver NMOS transistor are coupled for replica biasing, and wherein gate and drain voltages of the replica PMOS transistor and the driver PMOS transistor are coupled for replica biasing; and

a protection control circuit and protection switches, wherein the protection control circuit is configured to control the protection switches, wherein in a normal operating mode, the protection switches permit the biasing circuit to bias the driver NMOS transistor and the driver PMOS transistor, and wherein in a protected mode of operation, the protection switches cut off the driver NMOS transistor and the driver PMOS transistor.

2. An apparatus for differential signaling, the apparatus comprising:

a replica bias circuit comprising a replica NMOS transistor and a replica PMOS transistor;

an explicit resistor having a resistance of about N times a characteristic impedance intended to be driven b a main driver circuit wherein the ex a licit resistor is operatively coupled in a current path between sources of the replica NMOS transistor and the replica PMOS transistor, wherein N is greater than 1;

the main driver circuit comprising a driver NMOS transistor and a driver PMOS transistor and steering switches;

wherein the driver NMOS transistor is N times larger than the replica NMOS transistor, wherein a source of the driver NMOS transistor is configured to source current to a load via the steering switches;

wherein the driver PMOS transistor is N times larger than the replica PMOS transistor, and is configured to sink current from the load via the steering switches;

wherein outputs of the steering switches comprises a differential output of the main driver circuit, and wherein control of the steering switches controls the differential output data; and

a biasing circuit configured to bias the replica NMOS transistor such that the source of the replica NMOS transistor is biased relative to a first reference level V HIGH and configure to bias the replica PMOS transistor such that the source of the replica PMOS transistor is biased relative to second reference level V LOW different from the first reference level, wherein gate and drain voltages of the replica NMOS transistor and the driver NMOS transistor are coupled for replica biasing, and wherein gate and drain voltages of the replica PMOS transistor and the driver PMOS transistor are coupled for replica biasing, wherein the biasing circuit comprises a first biasing circuit and a second biasing circuit:

wherein the first biasing circuit comprises a first differential circuit having a positive input, a negative input, and an output, wherein the positive input is referenced to the first reference level, wherein the output is operatively coupled to a gate of the replica NMOS transistor, and wherein the source of the replica NMOS transistor is operatively coupled to the negative input, wherein the first biasing circuit further comprises a first level shift circuit disposed in the signal path between the output of the first differential circuit and the gate of the replica NMOS transistor and a first steering replica switch disposed in the signal path between the source of the replica NMOS transistor and the negative input, wherein the first steering replica switch is configured to replica a first portion of the voltage drop of the steering switch; and

wherein the second biasing circuit comprises a second differential circuit having a positive input, a negative input, and an output, wherein the positive input is referenced to the second reference level, wherein the output is operatively coupled to a gate of the replica PMOS transistor, and wherein the source of the replica PMOS transistor is operatively coupled to the negative input, wherein the second biasing circuit further comprises a second level shift circuit disposed in the signal path between the output of the second differential circuit and the gate of the replica PMOS transistor and a second steering replica switch disposed in the signal path between the source of the replica PMOS transistor and the negative input, wherein the second steering replica switch is configured to replica a second portion of the voltage drop of the steering switch.

3. A method of differential signaling, the method comprising:

biasing a replica NMOS transistor and a replica PMOS transistor such that the source of the replica NMOS transistor is biased relative to a first reference level V HIGH and such that the source of the replica PMOS transistor is biased relative to second reference level V LOW different from the first reference level;

operatively coupling an explicit resistor in a current path between sources of the replica NMOS transistor and the replica PMOS transistor, wherein the explicit resistor has a resistance of about N times a characteristic impedance intended to be driven by a main driver circuit, wherein N is greater than 1;

biasing a gate and drain of a driver NMOS transistor with a gate voltage and a drain voltage of the replica NMOS transistor, wherein the driver NMOS transistor is N times larger than the replica NMOS transistor, wherein a source of the driver NMOS transistor is configured to source current to a load via the steering switches;

biasing a gate and drain of a driver PMOS transistor with a gate voltage and drain voltage of the replica PMOS transistor, wherein the driver PMOS transistor is N times larger than the replica PMOS transistor, and is configured to sink current from the load via the steering switches;

generating a differential output of the main driver circuit at outputs of steering switches, wherein control of the steering switches controls the differential output data, wherein the steering switches, the driver NMOS transistor, and the driver PMOS transistor are part of the main driver circuit; and

detecting a short condition, and cutting off the driver NMOS transistor and the driver PMOS transistor at least during the short condition.

4. An apparatus for differential signaling, the apparatus comprising:

means for biasing a replica NMOS transistor and a replica PMOS transistor such that the source of the replica NMOS transistor is biased relative to a first reference level V HIGH and such that the source of the replica PMOS transistor is biased relative to second reference level V LOW different from the first reference level;

an explicit resistor in a current path between sources of the replica NMOS transistor and the replica PMOS transistor, wherein the explicit resistor has a resistance of about N times a characteristic impedance intended to be driven by a main driver circuit, wherein N is greater than 1;

means for biasing a gate and drain of a driver NMOS transistor with a gate voltage and a drain voltage of the replica NMOS transistor, wherein the driver NMOS transistor is N times larger than the replica NMOS transistor, wherein a source of the driver NMOS transistor is configured to source current to a load via the steering switches;

means for biasing a gate and drain of a driver PMOS transistor with a gate voltage and drain voltage of the replica PMOS transistor, wherein the driver PMOS transistor is N times larger than the replica PMOS transistor, and is configured to sink current from the load via the steering switches;

means for generating a differential output of the main driver circuit at outputs of steering switches, wherein control of the steering switches controls the differential output data, wherein the steering switches, the driver NMOS transistor, and the driver PMOS transistor are part of the main driver circuit; and

means for detecting a short condition, and means for cutting off the driver NMOS transistor and the driver PMOS transistor at least during the short condition.

5. The apparatus of claim 1 , wherein N is in a range from 5 to 20.

6. The apparatus of claim 1 , wherein the explicit resistor is integrated into an integrated circuit.

7. The apparatus of claim 1 , wherein the circuit is configured to carry digital data.

8. The apparatus of claim 1 , wherein each of the steering switches is an NMOS transistor.

9. The apparatus of claim 1 , wherein the protection control circuit further comprises a comparator circuit configured to compare each line of the differential output of the main driver circuit to a voltage reference to determine whether or not a fault exists, the protection control circuit further comprising pullup resistors coupled to each line of the differential output, wherein the pullup resistors are active at least when a fault has been detected, wherein the pullup resistors permit reset of the protection control circuit.

10. The apparatus of claim 9 , wherein the pullup resistors are active at least when a fault corresponding to a short to ground is detected, wherein the protection control circuit further comprises pulldown resistors coupled to each line of the differential output, wherein the pulldown resistors are active at least when a short to V DD has been detected, wherein the pulldown resistors permit reset of the protection control circuit.

11. The apparatus of claim 1 , wherein the biasing circuit comprises a first biasing circuit and a second biasing circuit:

wherein the first biasing circuit comprises a first differential circuit having a positive input, a negative input, and an output, wherein the positive input is referenced to the first reference level, wherein the output is operatively coupled to a gate of the replica NMOS transistor, and wherein the source of the replica NMOS transistor is operatively coupled to the negative input; and

wherein the second biasing circuit comprises a second differential circuit having a positive input, a negative input, and an output, wherein the positive input is referenced to the second reference level, wherein the output is operatively coupled to a gate of the replica PMOS transistor, and wherein the source of the replica PMOS transistor is operatively coupled to the negative input.

12. The apparatus of claim 1 , further comprising a feedback circuit configured to control an output impedance of at least the driver NMOS transistor and the driver PMOS transistor.

13. The method of claim 3 , wherein N is in a range from 5 to 20.

14. The method of claim 3 , wherein each of the steering switches is an NMOS transistor.

15. The apparatus of claim 4 , wherein N is in a range from 5 to 20.

16. The apparatus of claim 4 , wherein each of the steering switches is an NMOS transistor.

17. The apparatus of claim 2 , wherein N is in a range from 5 to 20.

18. The apparatus of claim 2 , wherein the explicit resistor is integrated into an integrated circuit.

19. The apparatus of claim 2 , wherein the circuit is configured to carry digital data.

20. The apparatus of claim 2 , wherein each of the steering switches is an NMOS transistor.

21. The apparatus of claim 2 , further comprising a feedback circuit configured to control an output impedance of at least the driver NMOS transistor and the driver PMOS transistor.

Assignments (18)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
RELEASE OF SECURITY INTEREST Recorded May 29, 2018
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MICROSEMI STORAGE SOLUTIONS, INC.; MICROSEMI STORAGE SOLUTIONS (U.S.), INC.
Reel/Frame 046251/0271 →
CHANGE OF NAME Recorded Apr 7, 2016
From: PMC-SIERRA, INC.
To: MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 038381/0753 →
PATENT SECURITY AGREEMENT Recorded Feb 3, 2016
From: MICROSEMI STORAGE SOLUTIONS, INC. (F/K/A PMC-SIERRA, INC.); MICROSEMI STORAGE SOLUTIONS (U.S.), INC. (F/K/A PMC-SIERRA US, INC.)
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037689/0719 →
RELEASE OF SECURITY INTEREST Recorded Feb 1, 2016
From: BANK OF AMERICA, N.A.
To: PMC-SIERRA, INC.; PMC-SIERRA US, INC.; WINTEGRA, INC.
Reel/Frame 037675/0129 →
SECURITY INTEREST IN PATENTS Recorded Aug 6, 2013
From: PMC-SIERRA, INC.; PMC-SIERRA US, INC.; WINTEGRA, INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 030947/0710 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 29, 2009
From: KASTURIRANGAN, VENKATESH; CHOUDHARY, VIKAS
To: PMC-SIERRA, INC.
Reel/Frame 022616/0308 →