Semiconductor device and method of forming vertical interconnect structure using stud bumps
View Patent ↗A semiconductor device is made by forming a conductive layer over a temporary carrier. The conductive layer includes a wettable pad. A stud bump is formed over the wettable pad. The stud bump can be a stud bump or stacked bumps. A semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the stud bump. A first interconnect structure is formed over a first surface of the encapsulant. The first interconnect structure includes a first IPD and is electrically connected to the stud bump. The carrier is removed. A second interconnect structure is formed over a second surface of encapsulant opposite the first interconnect structure. The second interconnect structure includes a second IPD. The first or second IPD includes a capacitor, resistor, or inductor. The semiconductor devices are stackable and electrically connected through the stud bump.
1. A method of making a semiconductor device, comprising:
providing a temporary carrier;
forming a conductive layer over the temporary carrier, the conductive layer including a wettable pad;
forming a stud bump over the wettable pad;
mounting a semiconductor die or component to the temporary carrier;
depositing an encapsulant over the semiconductor die or component and around the stud bump;
forming a first interconnect structure over a first surface of the encapsulant, the first interconnect structure including a first integrated passive device (IPD) and being electrically connected to the stud bump;
removing the temporary carrier; and
forming a second interconnect structure over a second surface of encapsulant opposite the first interconnect structure.
2. The method of claim 1 , wherein the second interconnect structure includes a second IPD.
3. The method of claim 1 , wherein the stud bump includes a plurality of stacked bumps.
4. The method of claim 1 , wherein a height of the stud bump is less than a thickness of the semiconductor die or component.
5. The method of claim 1 , further including:
stacking a plurality of the semiconductor devices; and
electrically connecting the semiconductor devices through the stud bump.
6. The method of claim 1 , wherein the semiconductor die or component includes a flipchip semiconductor die having an active surface oriented toward the first interconnect structure.
7. The method of claim 1 , wherein the semiconductor die or component includes a flipchip semiconductor die having an active surface oriented toward the second interconnect structure.
8. A method of making a semiconductor device, comprising:
providing a carrier;
forming a stud bump over the carrier;
mounting a semiconductor die or component to the carrier;
depositing an encapsulant over the semiconductor die or component and around the stud bump;
forming a first interconnect structure over a first surface of the encapsulant, the first interconnect structure being electrically connected to the stud bump;
removing the carrier; and
forming a second interconnect structure over a second surface of encapsulant opposite the first interconnect structure, wherein the first or second interconnect structure includes an IPD.
9. A method of making a semiconductor device, comprising:
providing a carrier;
forming a stud bump over the carrier;
mounting a semiconductor die or component to the carrier;
depositing an encapsulant over the semiconductor die or component and around the stud bump; and
forming a first interconnect structure over a first surface of the encapsulant, the first interconnect structure being electrically connected to the stud bump, wherein a height of the stud bump is less than a thickness of the semiconductor die or component.
10. A method of making a semiconductor device, comprising:
forming a first interconnect structure having a first integrated passive device (IPD);
forming a stud bump over the first interconnect structure;
mounting a semiconductor die or component to the first interconnect structure;
depositing an encapsulant over the semiconductor die or component and around the stud bump; and
forming a second interconnect structure over the encapsulant opposite the first interconnect structure.
11. The method of claim 10 , wherein the second interconnect structure includes a second IPD.
12. The method of claim 10 , wherein the stud bump includes a plurality of stacked bumps.
13. The method of claim 10 , wherein a height of the stud bump is less than a thickness of the semiconductor die or component.
14. The method of claim 10 , further including:
stacking a plurality of the semiconductor devices; and
electrically connecting the semiconductor devices through the stud bump.
15. The method of claim 10 , wherein the semiconductor die or component includes a flipchip semiconductor die having an active surface oriented toward the first interconnect structure.
16. A method of making a semiconductor device, comprising:
forming a first interconnect structure having a first integrated passive device (IPD);
forming a stud bump over the first interconnect structure;
mounting a semiconductor die or component to the first interconnect structure;
stacking a plurality of the semiconductor devices;
electrically connecting the semiconductor devices through the stud bump;
depositing an encapsulant over the semiconductor die or component and around the stud bump; and
forming a second interconnect structure over the encapsulant opposite the first interconnect structure.
17. The method of claim 16 , wherein the second interconnect structure includes a second IPD.
18. The method of claim 16 , wherein the stud bump includes a plurality of stacked bumps.
19. The method of claim 16 , wherein a height of the stud bump is less than a thickness of the semiconductor die or component.
20. The method of claim 16 , wherein the semiconductor die or component includes a flipchip semiconductor die having an active surface oriented toward the first interconnect structure.