Granted Patent B2

US 8,173,536 · App. 12/610,763 · Granted May 8, 2012

Abstract

Claims (60)

1. A method of making a semiconductor device, comprising:

providing a first substrate;

forming an interconnect pad over the first substrate;

forming a photoresist layer over the first substrate and interconnect pad;

removing a portion of the photoresist layer to form a continuous channel around a perimeter of the interconnect pad and expose the perimeter of the interconnect pad while leaving the photoresist layer covering a central area of the interconnect pad within the continuous channel;

depositing a first conductive material in the continuous channel of the photoresist layer to form a column of conductive material around the perimeter of the interconnect pad;

removing the photoresist layer to leave an open central region within the column of conductive material over the first conductive layer;

forming a masking layer around the column of conductive material while exposing the interconnect pad within the column of conductive material;

depositing a second conductive material over the interconnect pad within the central region of the column of conductive material, the second conductive material extending above the column of conductive material;

removing the masking layer; and

reflowing the second conductive material to form a column interconnect structure over the semiconductor device.

2. The method of claim 1 , wherein the column of conductive material is circular or rectangular.

3. The method of claim 1 , wherein the first conductive material includes copper and the second conductive material includes solder.

4. The method of claim 1 , further including:

providing a second substrate having a conductive layer; and

mounting the semiconductor device with the column interconnect structure connected to the conductive layer of the second substrate.

5. The method of claim 4 , further including forming a bump over the conductive layer.

6. The method of claim 1 , wherein the column interconnect structure provides stress relief.

7. A method of making a semiconductor device, comprising:

providing a first substrate;

forming an interconnect pad over the first substrate;

forming a photoresist layer over the first substrate and interconnect pad;

removing a portion of the photoresist layer to form a continuous channel and expose a perimeter of the interconnect pad;

depositing a first conductive material in the continuous channel of the photoresist layer to form a column of conductive material;

removing the photoresist layer to leave an open central region within the column of conductive material over the first conductive layer; and

depositing a second conductive material over the interconnect pad within the central region of the column of conductive material to form a column interconnect structure over the semiconductor device.

8. The method of claim 7 , wherein the column of conductive material is circular or rectangular.

9. The method of claim 7 , wherein the first conductive material includes copper.

10. The method of claim 7 , wherein the second conductive material includes solder.

11. The method of claim 7 , wherein the second conductive material extends above the column of conductive material.

12. The method of claim 7 , further including:

providing a second substrate having a conductive layer; and

mounting the semiconductor device with the column interconnect structure connected to the conductive layer of the second substrate.

13. The method of claim 12 , further including forming a bump over the conductive layer.

14. The method of claim 7 , wherein the column interconnect structure provides stress relief.

15. A method of making a semiconductor device, comprising:

providing a first substrate;

forming a first conductive layer over the first substrate;

forming a column of first conductive material over the first conductive layer with an open central region within the column of conductive material over the first conductive layer; and

depositing a second conductive material over the first conductive layer within the central region of the column of first conductive material to form a column interconnect structure over the semiconductor device.

16. The method of claim 15 , wherein the column of first conductive material is circular or rectangular.

17. The method of claim 15 , wherein the first conductive material includes copper and the second conductive material includes solder.

18. The method of claim 15 , further including:

providing a second substrate having a second conductive layer; and

mounting the semiconductor device with the column interconnect structure connected to the second conductive layer of the second substrate.

19. The method of claim 18 , further including forming a bump over the second conductive layer.

20. A method of making a semiconductor device, comprising:

providing a first substrate;

forming a first conductive layer over the first substrate;

forming a column of first conductive material over the first conductive layer; and

depositing a second conductive material over the first conductive layer within the column of first conductive material to form a column interconnect structure over the semiconductor device.

21. The method of claim 20 , wherein the column of conductive material is circular or rectangular.

22. The method of claim 20 , wherein the first conductive material includes copper.

23. The method of claim 20 , wherein the second conductive material includes solder.

24. The method of claim 20 , wherein the second conductive material extends above the column of conductive material.

25. The method of claim 20 , further including:

providing a second substrate having a second conductive layer; and

mounting the semiconductor device with the column interconnect structure connected to the second conductive layer of the second substrate.

26. The method of claim 25 , further including forming a bump over the second conductive layer.

27. The method of claim 20 , wherein the column interconnect structure provides stress relief.

Assignments (8)