IP Library Granted Patent US 8,034,666
Granted Patent B2
US 8,034,666 · App. 12/941,401 · Granted Oct 11, 2011

Multi-layer thick-film RF package

Assignee: Microsemi Corporation
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Quick Facts
Patent No.
US 8,034,666
App. No.
12/941,401
Granted
Oct 11, 2011
Kind
B2
Abstract

A method for producing a multi-layer thick-film RF package includes forming conductive layer(s) including one or more source portions, one or more gate portions, and/or one or more drain portions on a ceramic substrate. The conductive layer(s) and the ceramic substrate are fired or otherwise heated in a furnace until sintered. Thereafter, a dielectric pattern is formed on the conductive layer(s) and fired or otherwise heated in the furnace until sintered. Then, a conductive bridge is formed on the dielectric pattern, over the one or more drain portions and between the one or more source portions, which is then fired until sintered in the furnace. As a result, a monolithic, single-piece, sintered, high-frequency RF power transistor package having circuit features including a highly conductive and low capacitive bridge is produced.

Claims (58)

1. A method for producing a multi-layer thick-film RF package, the method comprising:

forming a conductive layer including one or more source portions and one or more drain portions on a ceramic substrate;

firing the conductive layer and the ceramic substrate in a furnace;

forming a dielectric pattern on the conductive layer;

firing the dielectric pattern in the furnace;

forming a conductive bridge on the dielectric pattern, over the one or more drain portions and between the one or more source portions and,

forming the dielectric pattern includes printing a glass paste on the conductive layer, the glass paste forming the dielectric pattern.

2. The method of claim 1 , further comprising:

firing the conductive bridge, the dielectric pattern, the conductive layer, and the ceramic substrate in the furnace to form a monolithic and sintered substrate having circuit features.

3. The method of claim 1 , wherein forming the conductive bridge includes printing a conductive paste on the dielectric pattern over the one or more drain portions.

4. The method of claim 3 , wherein forming the conductive bridge further includes connecting the one or more source portions through one or more openings in the dielectric pattern.

5. The method of claim 1 , wherein the conductive layer comprises a first conductive layer, the method further comprising:

forming a second conductive layer including the one or more source portions and the one or more drain portions on the first conductive layer; and

firing the second conductive layer in the furnace.

6. The method of claim 5 , wherein the first conductive layer includes a first composition of at least silver (Ag) and palladium (Pd) at a first ratio, and the second conductive layer includes a second composition of at least silver (Ag) and palladium (Pd) at a second ratio.

7. The method of claim 1 , wherein forming the conductive layer includes printing a conductive paste on the ceramic substrate, the conductive paste forming the one or more source portions, the one or more drain portions, and one or more gate portions.

8. The method of claim 1 , wherein:

forming the conductive layer includes printing a conductive paste having at least silver (Ag) and palladium (Pd) on the ceramic substrate to form the one or more source portions, and printing a conductive paste having at least gold (Au) on the ceramic substrate to form the one or more drain portions; and

forming the conductive bridge includes printing a conductive paste having at least gold (Au) on the dielectric pattern and over the one or more drain portions.

9. The method of claim 1 , wherein:

forming the conductive layer includes printing a conductive paste having at least silver (Ag) and palladium (Pd) on the ceramic substrate to form the one or more source portions and the one or more drain portions; and

forming the conductive bridge includes printing a conductive paste having at least silver (Ag) and palladium (Pd) on the dielectric pattern and over the one or more drain portions.

10. The method of claim 1 , wherein the dielectric pattern includes one or more openings for receiving one or more dies, the method further comprising:

disposing the one or more dies on the one or more drain portions through the one or more openings.

11. The method of claim 1 , wherein the dielectric pattern includes one or more notches for receiving one or more leads, the method further comprising:

disposing the one or more leads on the conductive layer through the one or more notches.

12. A method for producing a multi-layer thick-film RF package, the method comprising:

forming a conductive layer including one or more source portions and one or more drain portions on a ceramic substrate;

firing the conductive layer and the ceramic substrate in a furnace;

forming a dielectric pattern on the conductive layer;

firing the dielectric pattern in the furnace; and

forming a conductive bridge on the dielectric pattern, over the one or more drain portions and between the one or more source portions; wherein

forming the conductive bridge includes printing a conductive paste on the dielectric pattern over the one or more drain portions, and

forming the conductive bridge further includes connecting the one or more source portions through one or more openings in the dielectric pattern.

13. A method for producing a multi-layer thick-film RF package, the method comprising:

forming a conductive layer including one or more source portions and one or more drain portions on a ceramic substrate;

firing the conductive layer and the ceramic substrate in a furnace;

forming a dielectric pattern on the conductive layer;

firing the dielectric pattern in the furnace; and

forming a conductive bridge on the dielectric pattern, over the one or more drain portions and between the one or more source portions; wherein

forming the conductive layer includes printing a conductive paste having at least silver (Ag) and palladium (Pd) on the ceramic substrate to form the one or more source portions, and printing a conductive paste having at least gold (Au) on the ceramic substrate to form the one or more drain portions; and

forming the conductive bridge includes printing a conductive paste having at least gold (Au) on the dielectric pattern and over the one or more drain portions.

14. A method for producing a multi-layer thick-film RF package, the method comprising:

forming a conductive layer including one or more source portions and one or more drain portions on a ceramic substrate;

firing the conductive layer and the ceramic substrate in a furnace;

forming a dielectric pattern on the conductive layer;

firing the dielectric pattern in the furnace; and

forming a conductive bridge on the dielectric pattern, over the one or more drain portions and between the one or more source portions; wherein

forming the conductive layer includes printing a conductive paste having at least silver (Ag) and palladium (Pd) on the ceramic substrate to form the one or more source portions and the one or more drain portions; and

forming the conductive bridge includes printing a conductive paste having at least silver (Ag) and palladium (Pd) on the dielectric pattern and over the one or more drain portions.

15. A method for producing a multi-layer thick-film RF package, the method comprising:

forming a conductive layer including one or more source portions and one or more drain portions on a ceramic substrate;

firing the conductive layer and the ceramic substrate in a furnace;

forming a dielectric pattern on the conductive layer;

firing the dielectric pattern in the furnace;

forming a conductive bridge on the dielectric pattern, over the one or more drain portions and between the one or more source portions;

wherein the dielectric pattern includes one or more openings for receiving one or more dies, the method further comprising:

disposing the one or more dies on the one or more drain portions through the one or more openings.

Assignments (18)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
RELEASE OF SECURITY INTEREST Recorded May 29, 2018
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.), INC.; MICROSEMI FREQUENCY AND TIME CORPORATION; MICROSEMI COMMUNICATIONS, INC.; MICROSEMI SOC CORP.; MICROSEMI CORP. - POWER PRODUCTS GROUP; MICROSEMI CORP. - RF INTEGRATED SOLUTIONS
Reel/Frame 046251/0391 →
PATENT SECURITY AGREEMENT Recorded Feb 3, 2016
From: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC. (F/K/A LEGERITY, INC., ZARLINK SEMICONDUCTOR (V.N.) INC., CENTELLAX, INC., AND ZARLINK SEMICONDUCTOR (U.S.) INC.); MICROSEMI FREQUENCY AND TIME CORPORATION (F/K/A SYMMETRICON, INC.); MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION); MICROSEMI SOC CORP. (F/K/A ACTEL CORPORATION); MICROSEMI CORP. - POWER PRODUCTS GROUP (F/K/A ADVANCED POWER TECHNOLOGY INC.); MICROSEMI CORP. - RF INTEGRATED SOLUTIONS (F/K/A AML COMMUNICATIONS, INC.)
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037691/0697 →
RELEASE OF SECURITY INTEREST Recorded Jan 19, 2016
From: BANK OF AMERICA, N.A.
To: MICROSEMI CORPORATION; MICROSEMI CORP.-ANALOG MIXED SIGNAL GROUP, A DELAWARE CORPORATION; MICROSEMI SOC CORP., A CALIFORNIA CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC., A DELAWARE CORPORATION; MICROSEMI FREQUENCY AND TIME CORPORATION, A DELAWARE CORPORATION; MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION), A DELAWARE CORPORATION; MICROSEMI CORP.-MEMORY AND STORAGE SOLUTIONS (F/K/A WHITE ELECTRONIC DESIGNS CORPORATION), AN INDIANA CORPORATION
Reel/Frame 037558/0711 →
NOTICE OF SUCCESSION OF AGENCY Recorded Apr 9, 2015
From: ROYAL BANK OF CANADA (AS SUCCESSOR TO MORGAN STANLEY & CO. LLC)
To: BANK OF AMERICA, N.A., AS SUCCESSOR AGENT
Reel/Frame 035657/0223 →
SUPPLEMENTAL PATENT SECURITY AGREEMENT Recorded Nov 11, 2011
From: MICROSEMI CORPORATION; MICROSEMI CORP. - ANALOG MIXED SIGNAL GROUP; MICROSEMI CORP. - MASSACHUSETTS; ACTEL CORPORATION
To: MORGAN STANLEY & CO. LLC
Reel/Frame 027213/0611 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 8, 2010
From: SAMPLES, BENJAMIN A.
To: MICROSEMI CORPORATION
Reel/Frame 025328/0987 →
Continuity (2)
Provisional Application 61261338 · Nov 15, 2009
Related Publication 20110117705A1 · May 19, 2011