Semiconductor device and method of forming shielding layer over semiconductor die mounted to TSV interposer
A semiconductor device has a plurality of conductive vias formed partially through a substrate. A conductive layer is formed over the substrate and electrically connected to the conductive vias. A semiconductor die is mounted over the substrate. An encapsulant is deposited over the semiconductor die and substrate. A trench is formed through the encapsulant around the semiconductor die. A shielding layer is formed over the encapsulant. The trench is formed partially through the substrate and the shielding layer is formed in the trench partially through the substrate. An insulating layer can be formed in the trench prior to forming the shielding layer. A portion of the substrate is removed to expose the conductive vias. An interconnect structure is formed over the substrate opposite the semiconductor die. The interconnect structure is electrically connected to the conductive vias. The shielding layer is electrically connected to the interconnect structure.
1. A semiconductor device, comprising:
a substrate including a plurality of conductive vias extending from a first surface of the substrate to a second surface of the substrate opposite the first surface and exposed over a removed portion of the substrate;
a semiconductor die disposed over the substrate;
an encapsulant deposited over the substrate;
a trench formed through the encapsulant and the first surface of the substrate; and
a shielding layer formed over the semiconductor die and through the trench of the encapsulant and first surface of the substrate extending to the second surface of the substrate.
2. The semiconductor device of claim 1 , further including an interconnect structure formed over the substrate opposite the semiconductor die.
3. The semiconductor device of claim 1 , further including a seed layer formed between the shielding layer and encapsulant.
4. The semiconductor device of claim 1 , wherein the removed portion of the substrate exposes the shielding layer.
5. The semiconductor device of claim 1 , further including an insulating layer formed between the shielding layer and encapsulant.
6. The semiconductor device of claim 1 , further including conductive paste deposited between the shielding layer and substrate.
7. A semiconductor device, comprising:
a substrate;
a semiconductor die disposed over the substrate;
an encapsulant formed over the semiconductor die; and
a shielding layer formed over the semiconductor die and extending into a trench of the encapsulant from a first surface of the substrate to a second surface of the substrate opposite the first surface.
8. The semiconductor device of claim 7 , wherein the substrate includes
a trench with the shielding layer extending into the trench of the substrate.
9. The semiconductor device of claim 8 , further including a seed layer formed between the shielding layer and encapsulant.
10. The semiconductor device of claim 8 , further including an insulating layer formed between the shielding layer and encapsulant.
11. The semiconductor device of claim 7 , further including an interconnect structure formed over the substrate opposite the semiconductor die.
12. The semiconductor device of claim 11 , wherein the interconnect structure is electrically connected to the substrate.
13. The semiconductor device of claim 7 , further including conductive paste deposited between the shielding layer and substrate.
14. A semiconductor device, comprising:
a substrate;
a semiconductor die disposed over the substrate; and
a shielding layer formed over the semiconductor die within a trench of the substrate and extending over a surface of the substrate opposite a removed portion of the substrate.
15. The semiconductor device of claim 14 , further including:
an encapsulant deposited over the semiconductor die and substrate; and
a trench formed through the encapsulant with the shielding layer extending into the trench.
16. The semiconductor device of claim 15 , further including a seed layer formed between the shielding layer and encapsulant.
17. The semiconductor device of claim 15 , further including an insulating layer formed between the shielding layer and encapsulant.
18. The semiconductor device of claim 14 , wherein the shielding layer extends around a peripheral area of the semiconductor die.
19. The semiconductor device of claim 14 , further including an interconnect structure formed over the substrate opposite the semiconductor die.
20. The semiconductor device of claim 14 , further including conductive paste disposed between the shielding layer and substrate.
21. A semiconductor device, comprising:
a substrate;
a semiconductor die disposed over the substrate; and
a shielding layer formed over a first surface of the substrate within a trench of the substrate and extending to a second surface of the substrate opposite the first surface of the substrate.
22. The semiconductor device of claim 21 , further including an interconnect structure formed over the substrate opposite the semiconductor die.
23. The semiconductor device of claim 22 , wherein the shielding layer is electrically connected to the interconnect structure.
24. The semiconductor device of claim 21 , further including an insulating layer formed over the substrate.
25. The semiconductor device of claim 21 , further including conductive paste disposed between the shielding layer and substrate.