IP Library Granted Patent US 9,148,146
Granted Patent B1
US 9,148,146 · App. 13/898,310 · Granted Sep 29, 2015

Scalable high-swing transmitter with rise and/or fall time mismatch compensation

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Quick Facts
Patent No.
US 9,148,146
App. No.
13/898,310
Granted
Sep 29, 2015
Kind
B1
Abstract

Disclosed is a high-swing voltage-mode transmitter or line driver. The transmitter can operate over a wide range of supply voltages. Increasing the available output swing merely involves increasing the supply voltage; the circuit adapts to maintain the desired output impedance. This allows for a tradeoff between output amplitude and power consumption. Another advantage of the proposed architecture is that it compensates for process, voltage, and temperature (PVT) and mismatch variations so as to keep rise and fall times matched. This feature reduces common-mode noise and hence EMI in systems in which the transmitter is used.

Claims (62)

1. An apparatus comprising:

an output driver configured to generate a differential output signal by switching, wherein the output driver comprises a first subcircuit and a second subcircuit,

wherein the first subcircuit is configured to generate a positive-logic output signal of the differential output signal, wherein the first subcircuit comprises one or more PMOS transistors configured to switch to pull-up the positive-logic output signal for a first logic state of the differential output signal and one or more NMOS transistors configured to switch to pull-down the positive-logic output signal for a second logic state opposite to the first logic state of the differential output signal; and

wherein the second subcircuit is configured to generate a negative-logic output signal of the differential output signal, wherein the negative-logic output signal is inverted with respect to the positive-logic output signal, wherein the second subcircuit comprises one or more PMOS transistors configured to switch to pull-up the negative-logic output signal for the second logic state of the differential output signal and one or more NMOS transistors configured to switch to pull-down the negative-logic output signal for the first logic state of the differential output signal; and

a control circuit configured to provide gate voltages of the PMOS transistors and/or the NMOS transistors of the output driver such that a relationship between an amount of on resistance of the PMOS transistors as compared to an amount of on resistance of the NMOS transistors is tunable.

2. The apparatus of claim 1 , such that when switched on, the PMOS and NMOS transistors are biased to the triode region and not to the saturation region.

3. The apparatus of claim 1 , wherein the control circuit is configured to control gate voltages of both the PMOS transistors and the NMOS transistors.

4. The apparatus of claim 1 , wherein the control circuit is configured to tune the relationship such that a pull-up resistance of the PMOS transistors substantially matches a pull-down resistance of the NMOS transistors.

5. The apparatus of claim 4 , wherein the control circuit is configured to tune the relationship such that the pull-up resistance and the pull-down resistance match within 2 percent.

6. The apparatus of claim 1 , wherein the control circuit is configured to tune the relationship such that rise times match with the fall times.

7. The apparatus of claim 1 , wherein the control circuit is configured to tune the relationship such that rise times match with the fall times within 2 percent.

8. The apparatus of claim 1 , wherein the control circuit is configured to tune the relationship such that electromagnetic interference is reduced.

9. The apparatus of claim 1 , wherein the control circuit further comprises a replica circuit that is configured to emulate pull-up and pull-down resistances of the output driver, wherein the replica circuit is configured to generate one or more bias voltages for the gate voltages.

10. The apparatus of claim 1 , wherein the control circuit further comprises a low pass filter configured to generate a filtered common-mode signal of the differential output signal, wherein the control circuit is configured to tune the relationship based at least partly on the filtered common-mode voltage.

11. The apparatus of claim 10 , wherein the control circuit further comprises a replica circuit that is configured to emulate pull-up and pull-down resistances of the output driver, wherein the control circuit is further configured to generate a voltage reference based at least partly on the filtered common-mode voltage, wherein the voltage reference is provided as an input to the replica circuit, wherein the replica circuit is configured to generate one or more bias voltages for the gate voltages.

12. The apparatus of claim 10 , wherein the control circuit further comprises a replica circuit that is configured to emulate pull-up and pull-down resistances of the output driver, wherein the control circuit is further configured to generate a digital voltage reference based at least partly on a comparison between the filtered common-mode voltage and a reference voltage, wherein the digital voltage reference is provided as an input to a digital-to-analog converter to generate an analog voltage reference, wherein the analog voltage reference is provided as an input to the replica circuit, wherein the replica circuit is configured to generate one or more bias voltages for the gate voltages.

13. The apparatus of claim 1 , further comprising a level shifter circuit, wherein the apparatus has a first power supply voltage rail and a second power supply voltage rail, wherein the first power supply voltage rail is lower in magnitude than the second power supply voltage, wherein the output driver is powered from the second power supply voltage rail, wherein the level shifter circuit is configured to receive a data signal originating from a circuit powered by the first power supply voltage rail and is configured to provide the gate voltages to drive the PMOS and NMOS transistors of the output driver.

14. The apparatus of claim 1 , further comprising a plurality of sub-cells such that there are a plurality of pre-drivers, a plurality of level shifters, and a plurality of output drivers including the output driver, wherein each sub-cell comprises a pre-driver, a level shifter, and an output driver, wherein a selected number of one or more sub-cells are activated based on a desired amount of voltage swing and/or de-emphasis.

15. The apparatus of claim 14 , wherein transistors of the output drivers have a higher voltage rating than a voltage rating of transistors of the pre-drivers.

16. The apparatus of claim 1 , wherein the PMOS transistors and the NMOS transistors are arranged in a CMOS configuration.

17. The apparatus of claim 1 , wherein the PMOS transistors and the NMOS transistors are arranged in a cascode configuration.

18. The apparatus of claim 1 :

wherein the first subcircuit further comprises a first termination resistor having a first end and a second end, wherein the first end is electrically connected to a drain of the one or more PMOS transistors of the first subcircuit and a drain of the one or more NMOS transistors of the first subcircuit, wherein the second end is connected to a terminal to provide the positive-logic output signal; and

wherein the second subcircuit further comprises a second termination resistor having a first end and a second end, wherein the first end is electrically connected to a drain of the one or more PMOS transistors of the second subcircuit and a drain of the one or more NMOS transistors of the second subcircuit, wherein the second end is connected to a terminal to provide the negative-logic output signal.

19. A method of reducing electromagnetic interference, the method comprising:

generating a differential output signal using an output driver, wherein the output driver comprises a first subcircuit and a second subcircuit;

generating, using the first subcircuit, a positive-logic output signal of the differential output signal, wherein the first subcircuit comprises one or more PMOS transistors configured to switch to pull-up the positive-logic output signal for a first logic state of the differential output signal and one or more NMOS transistors configured to switch to pull-down the positive-logic output signal for a second logic state opposite to the first logic state of the differential output signal; and

generating, using the second subcircuit, a negative-logic output signal of the differential output signal, wherein the negative-logic output signal is inverted with respect to the positive-logic output signal, wherein the second subcircuit comprises one or more PMOS transistors configured to switch to pull-up the negative-logic output signal for the second logic state of the differential output signal and one or more NMOS transistors configured to switch to pull-down the negative-logic output signal for the first logic state of the differential output signal; and

providing, using a control circuit, gate voltages of the PMOS transistors and/or the NMOS transistors of the output driver such that when switched on, a relationship between an amount of on resistance of the PMOS transistors as compared to an amount of on resistance of the NMOS transistors is tunable.

20. The method of claim 19 , wherein the gate voltages are provided such that the PMOS and NMOS transistors are biased to the triode region and not to the saturation region.

21. The method of claim 19 , further comprising controlling gate voltages of both the PMOS transistors and the NMOS transistors.

22. The method of claim 19 , further comprising tuning the relationship such that a pull-up resistance of the PMOS transistors substantially matches a pull-down resistance of the NMOS transistors.

23. The method of claim 22 , further comprising tuning the relationship such that the pull-up resistance and the pull-down resistance match within 2 percent.

24. The method of claim 19 , further comprising tuning the relationship such that rise times match with the fall times.

25. The method of claim 19 , further comprising tuning the relationship such that rise times match with the fall times within 2 percent.

26. The method of claim 19 , further comprising tuning the relationship such that electromagnetic interference is reduced.

27. The method of claim 19 , further comprising emulating, using a replica circuit, pull-up and pull-down resistances of the output driver, and generating one or more bias voltages for the gate voltages.

28. The method of claim 19 , further comprising:

low pass filtering to generate a filtered common-mode signal of the differential output signal; and

tuning the relationship based at least partly on the filtered common-mode voltage.

29. The method of claim 28 , further comprising:

emulating, using a replica circuit, pull-up and pull-down resistances of the output driver;

generating a voltage reference based at least partly on the filtered common-mode voltage;

providing the voltage reference as an input to the replica circuit; and

generating, using the replica circuit, one or more bias voltages for the gate voltages.

30. The method of claim 28 , further comprising:

emulating, using a replica circuit, pull-up and pull-down resistances of the output driver;

generating a digital voltage reference based at least partly on a comparison between the filtered common-mode voltage and a reference voltage;

providing the digital voltage reference as an input to a digital-to-analog converter to generate an analog voltage reference;

providing the analog voltage reference as an input to the replica circuit; and

generating one or more bias voltages for the gate voltages.

31. The method of claim 19 , further comprising:

using a first power supply voltage rail and a second power supply voltage rail, wherein the first power supply voltage rail is lower in magnitude than the second power supply voltage, wherein the output driver is powered from the second power supply voltage rail;

receiving, using a level shifter circuit, a data signal originating from a circuit powered by the first power supply voltage rail; and

providing, using the level shifter circuit, the gate voltages to drive the PMOS and NMOS transistors of the output driver.

32. The method of claim 19 , further comprising providing a plurality of sub-cells such that there are a plurality of pre-drivers, a plurality of level shifters, and a plurality of output drivers including the output driver, wherein each sub-cell comprises a pre-driver, a level shifter, and an output driver, and activating a selected number of one or more sub-cells based on a desired amount of voltage swing.

33. The method of claim 32 , wherein transistors of the output drivers have a higher voltage rating than a voltage rating of transistors of the pre-drivers.

34. The method of claim 19 , wherein the PMOS transistors and the NMOS transistors are arranged in a CMOS configuration.

35. The method of claim 19 , wherein the PMOS transistors and the NMOS transistors are arranged in a cascode configuration.

36. The method of claim 19 :

wherein the first subcircuit further comprises a first termination resistor having a first end and a second end, wherein the first end is electrically connected to a drain of the one or more PMOS transistors of the first subcircuit and a drain of the one or more NMOS transistors of the first subcircuit, wherein the second end is connected to a terminal to provide the positive-logic output signal; and

wherein the second subcircuit further comprises a second termination resistor having a first end and a second end, wherein the first end is electrically connected to a drain of the one or more PMOS transistors of the second subcircuit and a drain of the one or more NMOS transistors of the second subcircuit, wherein the second end is connected to a terminal to provide the negative-logic output signal.

Assignments (17)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
RELEASE OF SECURITY INTEREST Recorded May 29, 2018
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MICROSEMI STORAGE SOLUTIONS, INC.; MICROSEMI STORAGE SOLUTIONS (U.S.), INC.
Reel/Frame 046251/0271 →
CHANGE OF NAME Recorded Apr 7, 2016
From: PMC-SIERRA, INC.
To: MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 038381/0753 →
PATENT SECURITY AGREEMENT Recorded Feb 3, 2016
From: MICROSEMI STORAGE SOLUTIONS, INC. (F/K/A PMC-SIERRA, INC.); MICROSEMI STORAGE SOLUTIONS (U.S.), INC. (F/K/A PMC-SIERRA US, INC.)
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037689/0719 →
RELEASE OF SECURITY INTEREST Recorded Feb 1, 2016
From: BANK OF AMERICA, N.A.
To: PMC-SIERRA, INC.; PMC-SIERRA US, INC.; WINTEGRA, INC.
Reel/Frame 037675/0129 →
SECURITY INTEREST IN PATENTS Recorded Aug 6, 2013
From: PMC-SIERRA, INC.; PMC-SIERRA US, INC.; WINTEGRA, INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 030947/0710 →