Granted Patent B2

US 8,980,691 · App. 13/931,397 · Granted Mar 17, 2015

Abstract

Claims (59)

1. A method of making a semiconductor device, comprising:

providing a substrate including a first insulating layer and a conductive layer embedded in the first insulating layer and a first opening extending completely through the substrate;

disposing a first semiconductor die within the first opening of the substrate;

depositing an encapsulant over the first semiconductor die and substrate; and

forming a second opening through the encapsulant and substrate extending to the conductive layer.

2. The method of claim 1 , further including forming an interconnect structure over the first semiconductor die and substrate.

3. The method of claim 1 , further including forming a bump within the second opening over the conductive layer.

4. The method of claim 1 , further including removing a portion of the first semiconductor die and encapsulant.

5. The method of claim 1 , wherein providing the substrate further includes:

forming a bump over the conductive layer; and

forming the first insulating layer over the conductive layer and the bump.

6. The method of claim 1 , further including disposing a second semiconductor die over the first semiconductor die.

7. A method of making a semiconductor device, comprising:

providing a substrate including a first insulating layer and a conductive layer;

forming a first opening through the substrate;

disposing a first semiconductor die within the first opening of the substrate; and

forming a second opening partially through the substrate extending to the conductive layer.

8. The method of claim 7 , further including forming an interconnect structure over the first semiconductor die and substrate.

9. The method of claim 7 , further including:

depositing an encapsulant over the first semiconductor die and substrate; and

forming the second opening through the encapsulant and substrate extending to the conductive layer.

10. The method of claim 7 , further including forming a bump within the second opening over the conductive layer.

11. The method of claim 7 , further including forming the first opening or second opening by stamping or laser direct ablation.

12. A semiconductor device, comprising:

a substrate including a first opening extending through the substrate;

a first semiconductor die disposed in the first opening of the substrate;

an encapsulant deposited over the first semiconductor die and substrate; and

a second opening formed through the encapsulant and partially through the substrate.

13. The semiconductor device of claim 12 , wherein the substrate further includes:

an insulating layer; and

a conductive layer embedded within the insulating layer.

14. The semiconductor device of claim 13 , wherein the conductive layer includes conductive pads or pillars having a pitch of 0.50 millimeters or less.

15. The semiconductor device of claim 12 , further including an interconnect structure formed over the first semiconductor die and substrate.

16. The semiconductor device of claim 12 , further including a bump formed in the second opening.

17. A semiconductor device, comprising:

a substrate including a first insulating layer and a conductive layer, wherein a first surface of the conductive layer and a second surface of the conductive layer opposite the first surface are devoid of the first insulating layer and a height of the conductive layer is less than a height of the first insulating layer; and

a first semiconductor die disposed adjacent to the substrate.

18. The semiconductor device of claim 17 , further including an interconnect structure formed over the first semiconductor die and substrate.

19. The semiconductor device of claim 17 , further including a bump formed in the second opening over the conductive layer.

20. The semiconductor device of claim 17 , further including an encapsulant deposited over the first semiconductor die and substrate.

21. The semiconductor device of claim 17 , further including a second semiconductor die disposed over the first semiconductor die.

22. The semiconductor device of claim 20 , wherein the second opening extends through the encapsulant and partially through the substrate.

23. The semiconductor device of claim 17 , further including a heat sink disposed over the first semiconductor die.

24. The semiconductor device of claim 17 , further including a second insulating layer formed over the first insulating layer.

25. The method of claim 1 , further including forming the first opening or second opening by stamping or laser direct ablation.

26. The method of claim 1 , further including forming a second insulating layer over the first insulating layer.

27. The method of claim 7 , further including forming a second insulating layer over the first insulating layer.

28. The method of claim 7 , further including disposing a second semiconductor die over the first semiconductor die.

29. The semiconductor device of claim 12 , further including a second semiconductor die disposed over the first semiconductor die.

30. A method of making a semiconductor device, comprising:

providing a plurality of substrate units each including an insulating layer and a conductive layer embedded in the insulating layer;

arranging the substrate units to form a space between the substrate units;

disposing a first semiconductor die in the space between the substrate units; and

forming an opening in the substrate units extending to the conductive layer.

31. The method of claim 30 , further including forming an interconnect structure over the first semiconductor die and substrate units.

32. The method of claim 30 , further including depositing an encapsulant over the first semiconductor die and substrate units.

33. The method of claim 32 , further including forming the opening through the encapsulant and substrate units extending to the conductive layer.

34. The method of claim 30 , further including forming a bump within the opening over the conductive layer.

35. The method of claim 30 , further including disposing a second semiconductor die over the first semiconductor die.

Assignments (8)