IP Library Granted Patent US 9,238,754
Granted Patent B2
US 9,238,754 · App. 14/203,621 · Granted Jan 19, 2016

Composition for tungsten CMP

Inventors: Steven Grumbine (Aurora, IL); Jeffrey Dysard (St. Charles, IL); Lin Fu (Naperville, IL); William Ward (Glen Ellyn, IL); Glenn Whitener (Batavia, IL)
Assignee: Cabot Microelectronics Corporation
C09G1/02H01L21/30625H01L21/3212
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Quick Facts
Patent No.
US 9,238,754
App. No.
14/203,621
Filed
Mar 11, 2014
Granted
Jan 19, 2016
Kind
B2
Art Unit
1716
USPC
252/79.1
Abstract

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Claims (25)

1. A chemical mechanical polishing composition comprising:

a water based liquid carrier;

a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV;

an amine compound in solution in the liquid carrier, wherein the amine compound comprises an alkyl group having 12 or more carbon atoms; and

an iron containing accelerator.

2. The composition of claim 1 , wherein the colloidal silica has a permanent positive charge of at least 15 mV.

3. The composition of claim 1 , wherein the colloidal silica is treated with an aminosilane compound.

4. The composition of claim 3 , wherein the aminosilane compound is selected from the group consisting of bis(2-hydroxyethyl)-3-aminopropyl trialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl)trialkoxysilane), 3-(N-styrylmethyl-2-aminoethylaminopropyl trialkoxysilane, aminopropyl trialkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyl trialkoxysilane), trialkoxysilyl propyl-N,N,N-trimethyl ammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethyl ammonium chloride, (bis(methyldialkoxysilylpropyl)-N-methyl amine, bis(trialkoxysilylpropyl)urea, bis(3-(trialkoxysilyl)propyl)-ethylenediamine, bis(trialkoxysilylpropyl)amine, and mixtures thereof.

5. The composition of claim 1 , wherein the iron containing accelerator comprises a soluble iron containing catalyst.

6. The composition of claim 5 further comprising a stabilizer bound to the soluble iron containing catalyst, the stabilizer being selected from the group consisting of phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, and mixtures thereof.

7. The composition of claim 1 , further comprising a hydrogen peroxide oxidizer.

8. The composition of claim 1 , having a pH in a range from about 2.0 to about 3.5.

9. The composition of claim 1 , wherein the amine compound is selected from the group consisting of primary amines, secondary amines, and quaternary amines.

10. The composition of claim 1 , wherein the amine compound is selected from the group consisting of monoamines, diamines, triamines, and tetramines.

11. The composition of claim 1 , wherein the amine compound is selected from the group consisting of dodecylamine, tetradecylamine, hexadecylamine, oxtadecylamine, oleylamine, N-methyldioctylamine, N-methyloctadecylamine, cocamidopropylamine oxide, benzyldimethylhexadecylammonium chloride, benzalkonium chloride, and cocoalkylmethyl[polyoxyethylene (15)]ammonium chloride, octadecylmethyl[polyoxyethylene (15)]ammonium chloride, N,N′-methylenebis (dimethyltetradecylammonium bromide), N,N,N′,N′,N′-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, didodecyl-tetramethyl-1,4-butanediaminium diiodide, N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide, and mixtures thereof.

12. The composition of claim 1 , wherein the amine compound is an amine containing polymer having four or more amine groups.

13. The composition of claim 12 , wherein the amine containing polymer is selected from the group consisting of triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, polymers including the following amine containing functional groups methacryloylox-ethyl trimethyl ammonium methylsulfate, diallyl dimethyl ammonium chloride, and methacrylamido-propyl trimethyl ammonium chloride, and mixtures thereof.

14. A chemical mechanical polishing composition comprising:

a water based liquid carrier;

a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV;

an amine compound in solution in the liquid carrier, wherein the amine compound is a polyquaternary amine compound; and

an iron containing accelerator.

15. The composition of claim 14 , wherein the polyquaternary amine is a diquaternary amine compound.

16. The composition of claim 15 , wherein the diquaternary amine compound is selected from the group consisting of N,N′-methylenebis(dimethyltetradecylammonium bromide), 1,1,4,4-tetrabutylpiperazinediium dibromide, N,N,N′,N′,N′-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, N,N′-hexamethylenebis(tributylammonium hydroxide), didodecyl-tetramethyl-1,4-butanediaminium diiodide, 1,5-dimethyl-1,5-diazoniabicyclo(3.2.2)nonane dibromide, N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide, and mixtures thereof.

17. The composition of claim 15 , wherein the diquaternary amine compound comprises an alkyl group having 10 or more carbon atoms.

Assignments (8)
CHANGE OF NAME Recorded Nov 22, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065663/0466 →
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2014
From: GRUMBINE, STEVEN; DYSARD, JEFFREY; FU, LIN; WARD, WILLIAM; WHITENER, GLENN
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 033735/0623 →
Continuity (1)
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