Semiconductor device
Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
1. A semiconductor device comprising:
a wiring substrate having a core substrate, a first build-up substrate which is formed over a first main surface of the core substrate, and a second build-up substrate which is formed over a second main surface opposite the first main surface of the core substrate;
a semiconductor chip having an obverse surface and a reverse surface opposite the obverse surface, the semiconductor chip being mounted over the first build-up substrate of the wiring substrate such that the obverse surface thereof faces to the first build-up substrate and being electrically connected with the wiring substrate via a plurality of first bump electrodes;
a sealing resin being disposed between the first build-up substrate of the wiring substrate and the obverse surface of the semiconductor chip such that the sealing resin seals the plurality of first bump electrodes; and
a plurality of second bump electrodes being disposed over the second build-up substrate of the wiring substrate,
wherein the core substrate has a first insulating layer, a plurality of first through holes which penetrate through the first insulating layer in a thickness direction of the first insulating layer, and a plurality of first wiring layers which are formed over a top surface and a bottom surface of the first insulating layer and are electrically connected each other via the plurality of first through holes, respectively,
wherein the first build-up substrate has a second insulating layer, a plurality of second through holes which penetrate through the second insulating layer in a thickness direction of the second insulating layer, and a plurality of second wiring layers which are formed over a surface of the second insulating layer and are electrically connected with the first wiring layers at the top surface of the first insulating layer via the plurality of second through holes respectively,
wherein the second build-up substrate has a third insulating layer, a plurality of third through holes which penetrate through the third insulating layer in a thickness direction of the third insulating layer, a plurality of third wiring layers which are formed over a surface of the third insulating layer and are electrically connected with the first wiring layers at the bottom surface of the first insulating layer via the plurality of third through holes respectively,
wherein the first insulating layer of the core substrate includes a plurality of first glass cloths impregnated with insulating resin,
wherein each of the second insulating layer of the first build-up substrate and the third insulating layer of the second build up substrate includes a second glass cloth impregnated with insulating resin, respectively,
wherein each of the first and second glass cloths is woven a glass fiber in a shape of a cloth, and
wherein a thickness of the second glass cloth contained in each of the first and second build-up substrates is thinner than a thickness of each of the first glass cloths contained in the core substrate in a cross section view.
2. The semiconductor device according to claim 1 ,
wherein a diameter of each of the plurality of second and third through holes is different from a diameter of each of the plurality of first through holes.
3. The semiconductor device according to claim 2 ,
wherein the diameter of each of the plurality of second and third through holes is smaller than the diameter of each of the plurality of first through holes.
4. The semiconductor device according to claim 3 ,
wherein the diameter of each of the plurality of second and third through holes is 100 micrometers or less.
5. The semiconductor device according to claim 1 ,
wherein a thickness of each of the first and second build-up substrates is thinner than a thickness of the core substrate in the cross section view.
6. The semiconductor device according to claim 1 , further comprising:
a solder resist layer being formed such that the solder resist covers parts of the plurality of second wirings of the first build-up substrate,
wherein the plurality of first bump electrodes electrically connect with the plurality of second wirings exposed from the solder resist, respectively.
7. A semiconductor device comprising:
a wiring substrate having a core substrate, a first build-up substrate which is formed over a first main surface of the core substrate, and a second build-up substrate which is formed over a second main surface opposite the first main surface of the core substrate;
a semiconductor chip having an obverse surface and a reverse surface opposite the obverse surface, the semiconductor chip being mounted over the first build-up substrate of the wiring substrate such that the obverse surface thereof faces to the first build-up substrate and being electrically connected with the wiring substrate via a plurality of first bump electrodes;
a sealing resin being disposed between the first build-up substrate of the wiring substrate and the obverse surface of the semiconductor chip such that the sealing resin seals the plurality of first bump electrodes; and
a plurality of second bump electrodes being disposed over the second build up substrate of the wiring substrate,
wherein the core substrate has a first insulating layer, a plurality of first through holes which penetrate through the first insulating layer in a thickness direction of the first insulating layer, and a plurality of first wiring layers which are formed over a top surface and a bottom surface of the first insulating layer and are electrically connected each other via the plurality of first through holes, respectively,
wherein the first build-up substrate has a second insulating layer, a plurality of second through holes which penetrate through the second insulating layer in a thickness direction of the second insulating layer, and a plurality of second wiring layers which are formed over a surface of the second insulating layer and are electrically connected with the first wiring layers at the top surface of the first insulating layer via the plurality of second through holes respectively,
wherein the second build-up substrate has a third insulating layer, a plurality of third through holes which penetrate through the third insulating layer in a thickness direction of the third insulating layer, and a plurality of third wiring layers which are formed over a surface of the third insulating layer and are electrically connected with the first wiring layers at the bottom surface of the first insulating layer via the plurality of third through holes respectively,
wherein the first insulating layer of the core substrate includes a plurality of first glass cloths impregnated with insulating resin,
wherein each of the second insulating layer of the first build-up substrate and the third insulating layer of the second build up substrate includes a second glass cloth impregnated with insulating resin, respectively,
wherein each of the first and second glass cloths is nonwoven fabric type glass cloth formed by the glass fiber, and
wherein a thickness of the second glass cloth contained in each of the first and second build-up substrates is thinner than a thickness of each of the first glass cloths contained in the core substrate in a cross section view.
8. A semiconductor device comprising:
a wiring substrate having a core substrate, a first build-up substrate which is formed over a first main surface of the core substrate, and a second build-up substrate which is formed over a second main surface opposite the first main surface of the core substrate;
a semiconductor chip having an obverse surface and a reverse surface opposite the obverse surface, the semiconductor chip being mounted over the first build-up substrate of the wiring substrate such that the obverse surface thereof faces the first build-up substrate and being electrically connected with the wiring substrate via a plurality of first bump electrodes;
a sealing resin being disposed between the first build-up substrate of the wiring substrate and the obverse surface of the semiconductor chip such that the sealing resin seals the plurality of first bump electrodes; and
a plurality of second bump electrodes being disposed over the second build-up substrate of the wiring substrate,
wherein the core substrate has a first insulating layer, a plurality of first through holes which penetrate through the first insulating layer in a thickness direction of the first insulating layer, and a plurality of first wiring layers which are formed over a top surface and a bottom surface of the first insulating layer and are electrically connected to each other via the plurality of first through holes, respectively,
wherein the first build-up substrate has a second insulating layer, a plurality of second through holes which penetrate through the second insulating layer in a thickness direction of the second insulating layer, and a second wiring layer which is formed over a surface of the second insulating layer and is electrically connected with the first wiring layers at the top surface of the first insulating layer via the plurality of second through holes respectively,
wherein the second build-up substrate has a third insulating layer, a plurality of third through holes which penetrate through the third insulating layer in a thickness direction of the third insulating layer, a third wiring layer which is formed over a surface of the third insulating layer and is electrically connected with the first wiring layers at the bottom surface of the first insulating layer via the plurality of third through holes respectively,
wherein the first insulating layer of the core substrate includes a plurality of first glass cloths impregnated with insulating resin,
wherein each of the second insulating layer of the first build-up substrate and the third insulating layer of the second build up substrate includes a second glass cloth impregnated with insulating resin, respectively,
wherein each of the first and second glass cloths is woven a glass fiber in a shape of a cloth, and
wherein a thickness of the second glass cloth contained in each of the first and second build- up substrates is thinner than a thickness of each of the first glass cloths contained in the core substrate in a cross section view.
9. The semiconductor device according to claim 8 ,
wherein a diameter of each of the plurality of second and third through holes is different from a diameter of each of the plurality of first through holes.
10. The semiconductor device according to claim 9 ,
wherein the diameter of each of the plurality of second and third through holes is smaller than the diameter of each of the plurality of first through holes.
11. The semiconductor device according to claim 10 ,
wherein the diameter of each of the plurality of second and third through holes is 100 micrometers or less.
12. The semiconductor device according to claim 8 ,
wherein a thickness of each of the first and second build-up substrates is thinner than a thickness of the core substrate in the cross section view.
13. The semiconductor device according to claim 8 , further comprising:
a solder resist layer being formed such that the solder resist covers parts of the plurality of second wirings of the first build-up substrate,
wherein the plurality of first bump electrodes electrically connect with the plurality of second wirings exposed from the solder resist, respectively.
14. A semiconductor device comprising:
a wiring substrate having a core substrate, a first build-up substrate which is formed over a first main surface of the core substrate, and a second build-up substrate which is formed over a second main surface opposite the first main surface of the core substrate;
a semiconductor chip having an obverse surface and a reverse surface opposite the obverse surface, the semiconductor chip being mounted over the first build-up substrate of the wiring substrate such that the obverse surface thereof faces the first build-up substrate and being electrically connected with the wiring substrate via a plurality of first bump electrodes;
a sealing resin being disposed between the first build-up substrate of the wiring substrate and the obverse surface of the semiconductor chip such that the sealing resin seals the plurality of first bump electrodes; and
a plurality of second bump electrodes being disposed over the second build-up substrate of the wiring substrate,
wherein the core substrate has a first insulating layer, a plurality of first through holes which penetrate through the first insulating layer in a thickness direction of the first insulating layer, and a plurality of first wiring layers which are formed over a top surface and a bottom surface of the first insulating layer and are electrically connected each other via the plurality of first through holes, respectively,
wherein the first build-up substrate has a second insulating layer, a plurality of second through holes which penetrate through the second insulating layer in a thickness direction of the second insulating layer, and a second wiring layer which is formed over a surface of the second insulating layer and is electrically connected with the first wiring layers at the top surface of the first insulating layer via the plurality of second through holes respectively,
wherein the second build-up substrate has a third insulating layer, a plurality of third through holes which penetrate through the third insulating layer in a thickness direction of the third insulating layer, and a third wiring layer which is formed over a surface of the third insulating layer and is electrically connected with the first wiring layers at the bottom surface of the first insulating layer via the plurality of third through holes respectively,
wherein the first insulating layer of the core substrate includes a plurality of first glass cloths impregnated with insulating resin,
wherein each of the second insulating layer of the first build-up substrate and the third insulating layer of the second build up substrate includes a second glass cloth impregnated with insulating resin, respectively,
wherein each of the first and second glass cloths is nonwoven fabric type glass cloth formed by the glass fiber, and
wherein a thickness of the second glass cloth contained in each of the first and second build- up substrates is thinner than a thickness of each of the first glass cloths contained in the core substrate in a cross section view.