Composition and method for removing residue from chemical-mechanical planarization substrate
Described is a post-CMP cleaning solution and methods useful to remove residue from a CMP substrate or to prevent formation of residue on a surface of a CMP substrate.
1. A method of removing residue from a CMP substrate, the method comprising:
(a) providing a CMP substrate, wherein the substrate comprises a surface layer comprising tungsten, copper, or cobalt,
(b) providing a platen that includes a pad,
(c) providing a cleaning solution comprising:
liquid carrier, wherein the cleaning solution contains substantially no abrasive particles, and
cyclodextrin compound, and
(d) contacting the pad and the cleaning solution to a surface of the substrate, with motion, to remove the residue from the surface.
2. The method of claim 1 wherein the cleaning solution comprises from 10 to 50,000 parts per million cyclodextrin compound based on total weight cleaning solution.
3. The method of claim 1 wherein the cleaning solution consists essentially of water and cyclodextrin compound.
4. The method of claim 1 wherein the cleaning solution consists essentially of water, cyclodextrin compound, and one or more chelant, pH adjuster, and biocide.
5. The method of claim 1 wherein the cleaning solution further contains a chelant.
6. The method of claim 1 wherein the surface comprises residue selected from: organic material, and residue particles comprising a precipitated, agglomerated, or coagulated combination of organic material and inorganic material.
7. The method of claim 1 wherein the residue comprises residue particles comprising organic material and metal-containing abrasive particles.
8. The method of claim 7 wherein the abrasive particles are alumina particles.
9. A cleaning solution for processing a post-CMP substrate, the solution comprising:
liquid carrier, and
from 10 to 50,000 parts per million based on total weight cleaning solution of a cyclodextrin compound, wherein the cleaning solution contains substantially no abrasive particles.
10. The cleaning solution of claim 9 consisting essentially of water and cyclodextrin compound.
11. The cleaning solution of claim 9 further comprising a chelant.
12. The cleaning solution of claim 11 wherein the chelant is a carboxylic acid group-containing chelant.
13. The cleaning solution of claim 11 wherein the chelant is a compound selected from malonic acid, maleic acid, a linear or branched C1-C6 carboxylic acid compound, phthalic acid, succinic acid, citric acid, tartaric acid, malic acid, gluconic acid, or a combination thereof.
14. The cleaning solution of claim 11 wherein the chelant is a carboxylic acid group-containing polymer.
15. A cleaning solution of claim 9 , wherein the solution contains substantially no surfactant.