Self-stopping polishing composition and method for bulk oxide planarization
The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.
1. A chemical-mechanical polishing composition comprising:
(a) an abrasive selected from ceria, zirconia, and combinations thereof,
(b) a self-stopping agent selected from a compound of the formula (II):
wherein each of X 1 -X 3 is independently selected from N, O, S, a sp 2 -hybridized carbon, and CY 1 Y 2 , wherein each of Y 1 and Y 2 is independently selected from hydrogen, hydroxyl, C 1 -C 6 alkyl, halogen, and combinations thereof, and each of Z 1 -Z 3 is independently selected from hydrogen, hydroxyl, C 1 -C 6 alkyl, and combinations thereof, each of which may be substituted or unsubstituted; a compound of formula (III):
Z—(C(X 1 X 2 ) n ) p —CO 2 M (III),
wherein Z is selected from N, C 1 -C 6 alkyl, C 1 -C 6 alkenyl, C 1 -C 6 alkynyl, and aryl (e.g., phenyl, benzyl, naphthyl, azulene, anthracene, pyrene, etc.), X 1 and X 2 are independently selected from hydrogen, hydroxy, amino, and C 1 -C 6 alkyl, C 1 -C 6 alkenyl, and wherein X 1 and X 2 taken together with the attached carbon can form a sp 2 -hybridized carbon, n is 1 or 2, p is 0-4, and NI is selected from hydrogen and a suitable counterion (e.g., a group I metal), each of which may be substituted or unsubstituted; and combinations thereof, a compound of formula (IV):
where X, Y, and Z are independently selected from H, O, S, NH, and CH 2 , R 1 , R 2 and R 3 are independently selected from H, alkyl, alkenyl, alkynyl, aryl, halo, and haloalkyl, and M is selected from hydrogen and a suitable counterion,
(c) a cationic compound, wherein the cationic compound is a polymer or oligomer that comprises monomers selected from quaternary amines, cationic polyvinyl alcohols, cationic cellulose, and combinations thereof, and
(d) an aqueous carrier,
wherein the polishing composition has a pH of about 3 to about 9.
2. The polishing composition of claim 1 , wherein the polishing composition further comprises a rate enhancer.
3. The polishing composition of claim 1 , wherein the abrasive is present in the polishing composition at a concentration of about 0.001 wt. % to about 5 wt. %.
4. The polishing composition of claim 1 , wherein the self-stopping agent is selected from maltol, ethyl maltol, kojic acid, benzoic acid, 3,4-dihydroxybenzoic acid, 3,5-dihydroxvhenzoic acid, caffeic acid, ethyl maltol, sorbic acid, butyric acid, valeric acid, hexanoic acid, tiglic acid, angelic acid, crotonic acid, sorbic acid, deferiprone, 2-hydroxy, nicotinic acid, 2-pentenoic acid, 3-pentenoic acid, other saturated and unsaturated alkyl carboxylic acids, their salts, and combinations thereof.
5. The polishing composition of claim 1 , wherein the self-stopping agent is present in the polishing composition at a concentration of about 1 wt. % or less.
6. The polishing composition of claim 1 , wherein the cationic compound is a polymer or oligomer that comprises quaternary amine monomers, and wherein the quaternary amine monomers are selected from vinylimidazolium, methacryloyloxyethyltrimethylammonium halide, diallyldimethylammonium halide, and combinations thereof.
7. The polishing composition of claim 1 , wherein the cationic compound is a cationic oligomer or cationic polymer that is selected from, 2-(dimethylamino)ethyl methacrylate, diallyldimethylammonium, poly(vinylimidazolium), poly(methacryloyloxyethyltrimethylammonium) halide, poly(diallyldiinethylammonium) halide, polyquaternium-2, Polyquaternium-11, Polyquaternium-16, polyquaternium-46, Polyquatemium-44, Luviquat Supreme, Luviquat Hold, Luviquat UltraCare, Luviquat FC 370, Luviquat FC 550, Luviquat FC 552, Luviquat Excellence, and combinations thereof.
8. The polishing composition of claim 1 , wherein the polishing composition has a pH of about 6.0 to about 8.5.
9. The polishing composition of claim 1 , wherein the polishing composition has a pH of about 3 to about 5.
10. A method of chemically-mechanically polishing a substrate comprising:
(i) providing a substrate, wherein the substrate comprises a pattern dielectric layer on a surface of the substrate, providing a polishing pad,
(iii) providing the chemical-mechanical polishing composition of claim 1 ,
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the pattern dielectric layer on a surface of the substrate to polish the substrate.