IP Library Granted Patent US 10,968,377
Granted Patent B2
US 10,968,377 · App. 15/951,598 · Granted Apr 6, 2021

Chemical-mechanical processing slurry and methods for processing a nickel substrate surface

Inventors: Tong Li (Singapore, SG); Hon Wu Lau (Singapore, SG)
Assignee: CMC Materials, Inc.
C09K3/1472B24B37/044C09G1/02C09G1/04C09K3/1463
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Quick Facts
Patent No.
US 10,968,377
App. No.
15/951,598
Granted
Apr 6, 2021
Kind
B2
Abstract

Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel phosphorus (NiP) surfaces for hard disk applications.

Claims (14)

1. A method of chemical-mechanical processing a nickel-phosphorus surface by a bulk removal step, the method comprising:

providing a substrate having a nickel-phosphorus surface;

providing bulk slurry comprising bulk slurry abrasive particles dispersed in liquid carrier, the bulk slurry abrasive particles comprising, as hulk slurry primary abrasive particles, silica abrasive particles having an average particle size of not greater than 100 nanometers;

providing a polishing pad in contact with a platen,

in the bulk removal step, contacting the substrate surface with the polishing pad and the bulk slurry, with motion therebetween, to remove material from the substrate surface and provide a bulk-processed surface of the substrate,

providing polishing slurry comprising polishing slurry abrasive particles dispersed in liquid carrier, the polishing slurry abrasive particles comprising, as polishing slurry primary abrasive particles, the polishing slurry primary abrasive particles are irregularly-shaped and have an average particle size of not greater than 60 nanometers,

in a polishing step, contacting the bulk-processed surface with the polishing pad used in the bulk removal step and the polishing slurry, with motion therebetween, to remove nickel-phosphorus material from the surface to produce a polished surface, wherein, after the bulk removal step and before the polishing step, the method does not include a step of rinsing the substrate surface.

2. The method of claim 1 wherein the bulk slurry abrasive particles include at least 95 weight percent silica abrasive particles having an average particle size of not greater than 100 nanometers, based on total weigh abrasive particles in the bulk slurry.

3. The method of claim 1 wherein the bulk slurry abrasive particles consist essentially of the silica abrasive particles having an average particle size of not greater than 100 nanometers.

4. The method of claim 1 wherein the silica abrasive particles are colloidal silica particles.

5. The method of claim 1 wherein the hulk slurry primary abrasive particles are spherical particles having an average particle size of not greater than 90 nanometers.

6. The method of claim 1 wherein the bulk slurry abrasive particles comprise bulk sherry secondary abrasive particles that are irregular-shaped and have an average particle size of not greater than 60 nanometers.

7. The method of claim 1 wherein the bulk slurry primary abrasive particles are irregular-shaped and have an average particle size of not greater than 60 nanometers.

8. The method of claim 1 wherein a rate of removal of the nickel-phosphorus material from the surface during the polishing step is less than a rate of removal of the nickel-phosphorus material from the substrate during the bulk removal step.

Assignments (8)
CHANGE OF NAME Recorded Nov 22, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065663/0466 →
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 12, 2018
From: LI, TONG; LAU, HON WU
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 045522/0001 →
Continuity (2)
Provisional Application 62485444 · Apr 14, 2017
Related Publication 20180298257A1 · Oct 18, 2018