IP Library Granted Patent US 10,479,911
Granted Patent B1
US 10,479,911 · App. 16/000,062 · Granted Nov 19, 2019

Composition and method for polishing memory hard disks exhibiting reduced edge roll off

Inventor: Selvaraj Palanisamy Chinnathambi (Singapore, SG)
Assignee: Cabot Microelectronics Corporation
C09G1/02B24B37/044C09G1/04C09G1/18C09K3/1463G11B5/647G11B5/84
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Quick Facts
Patent No.
US 10,479,911
App. No.
16/000,062
Granted
Nov 19, 2019
Kind
B1
Abstract

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising colloidal silica and fused silica, (b) a compound of formula (I) or a combination of a compound of formula (II) and a hydrophobic organic compound, (c) an amino acid, (d) hydrogen peroxide, and (e) water, wherein the polishing composition has a pH of about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.

Claims (31)

1. A chemical-mechanical polishing composition comprising:

(a) an abrasive comprising colloidal silica and fused silica,

(b) about 10 ppm to about 1000 ppm of a compound of formula (I):

wherein R is selected from

a straight chain or branched chain C 1 -C 20 alkyl,

R 5 C 6 H 4 , and

R 6 —O—(R 7 O) n —,

wherein R 1 -R 5 are independently selected from straight chain or branched chain C 1 -C 20 alkyls,

wherein R 6 is a straight chain or branched chain C 1 -C 20 alkyl or R 8 —C 6 H 4 —,

wherein R 7 is a straight chain or branched chain C 2 -C 10 alkylene,

wherein R 8 is a straight chain or branched chain C 1 -C 20 alkyl,

wherein n is an integer of from 1 to about 20,

wherein X and Y are independently O or a covalent bond, and

wherein A and B are independently an alkali metal cation or an organic amine compound,

(c) an amino acid,

(d) hydrogen peroxide, and

(e) water,

wherein the polishing composition has a pH of about 1 to about 5.

2. The polishing composition of claim 1 , wherein the colloidal silica has an average particle size of about 10 nm to about 200 nm.

3. The polishing composition of claim 1 , wherein the fused silica has an average particle size of about 100 nm to about 800 nm.

4. The polishing composition of claim 1 , wherein the compound of formula (I) is selected from sodium dodecyl sulfate, diethylhexyl sulfosuccinate, dodecylbenzene sulfonate, a sec-alkyl derivative of benzenesulfonic acid, an alkyl diphenyloxide disulfonate, secondary alkane sulfonate, mono alkyl branched propoxy sulfate, polyethyleneglycol nonylphenyl ether sulfate and combinations thereof.

5. The polishing composition of claim 1 , wherein the amino acid is glycine or alanine.

6. The polishing composition of claim 1 , wherein the polishing composition comprises about 100 ppm to about 500 ppm of the compound of formula (I).

7. The polishing composition of claim 1 , wherein the polishing composition comprises about 0.1 wt. % to about 10 wt. % of a combination of colloidal silica and fused silica.

8. A method of chemically mechanically polishing a substrate comprising:

(i) providing a substrate,

(ii) providing a polishing pad,

(iii) providing the chemical-mechanical polishing composition of claim 1 ,

(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and

(v) moving the polishing pad and the chemical mechanical polishing composition relative to the substrate to abrade at least a portion of a surface of the substrate to thereby polish the substrate.

9. The method of claim 8 , wherein the substrate is a nickel-phosphorous-coated aluminum memory disk, wherein the substrate comprises nickel-phosphorous on a surface of the substrate, and wherein at least a portion of the nickel-phosphorous on a surface of the substrate is abraded to polish the substrate.

Assignments (8)
CHANGE OF NAME Recorded Nov 22, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065663/0466 →
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 21, 2018
From: PALANISAMY CHINNATHAMBI, SELVARAJ
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 046169/0974 →