Composition and method for copper barrier CMP
A chemical mechanical polishing composition for polishing a substrate having copper, barrier, and dielectric layers includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including copper, barrier, and dielectric layers includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the copper, barrier, and dielectric layers from the substrate and thereby polish the substrate.
1. A chemical mechanical polishing composition for polishing a substrate having copper, barrier, and dielectric layers, the polishing composition comprising:
a water based liquid carrier;
cationic silica abrasive particles dispersed in the liquid carrier, the cationic silica abrasive particles having a zeta potential of at least 10 mV in the polishing composition;
a triazole compound, wherein the triazole compound is not benzotriazole or a benzotriazole compound; and
wherein the polishing composition has a pH of greater than 6, and wherein the composition is substantially free of a per-compound oxidizer and further comprises an N-oxide compound oxidizer in a concentration of about 0.5 mM to about 100 mM.
2. The composition of claim 1 , wherein the triazole compound is a triazole pyridine compound.
3. The composition of claim 2 , wherein the triazole pyridine compound is 1H-1,2,3-Triazolo[4,5,b] pyridine, 1-Acetyl-1H-1,2,3-triazolo[4,5,b] pyridine, 3H-[1,2,3]Triazolo[4,5-c] pyridine, or 2-(1,2,4-Triazol-3-yl) pyridine.
4. The composition of claim 2 , wherein the triazole pyridine compound is 1H-1,2,3-Triazolo[4,5,b] pyridine.
5. The composition of claim 2 , comprising from about 50 to about 500 ppm of the triazole pyridine compound.
6. The composition of claim 1 , having a pH from about 6 to about 8.
7. The composition of claim 1 , wherein the cationic silica abrasive particles have an isoelectric point greater than about 9.
8. The composition of claim 1 , wherein the cationic silica abrasive particles comprise colloidal silica particles having have a permanent positive charge of at least 20 mV at a pH of greater than 6.
9. The composition of claim 1 , comprising less than about 2 weight percent of the cationic silica abrasive particles.
10. A method of chemical mechanical polishing a substrate having copper, harrier, and dielectric layers, the method comprising:
(a) contacting the substrate with a polishing composition comprising:
(i) a water based liquid carrier;
(ii) cationic silica abrasive particles dispersed in the liquid carrier, the cationic silica abrasive particles having a zeta potential of at least 10 mV;
(iii) a triazole compound, wherein the triazole compound is not benzotriazole or a benzotriazole compound; and
wherein the polishing composition has a pH of greater than 6, and wherein the composition is substantially free of a per-compound oxidizer and further comprises an N-oxide compound oxidizer in a concentration of about 0.5 mM to about 100 mM;
(b) moving the polishing composition relative to the substrate; and
(c) abrading the substrate to remove a portion of the copper layer from the substrate and thereby polish the substrate.
11. The method of claim 10 , wherein the triazole compound is a triazole pyridine compound.
12. The method of claim 11 , wherein the triazole pyridine compound is 1H-1,2,3-Triazolo[4,5,b] pyridine, 1-Acetyl-1H-1,2,3-triazolo[4,5,b] pyridine, 3H-[1,2,3]Triazolo[4,5-c] pyridine, or 2-(1,2,4-Triazol-3-yl) pyridine.
13. The method of claim 11 , wherein the triazole pyridine compound 1H-1,2,3-Triazolo[4,5,b] pyridine.
14. The method of claim 11 , wherein the polishing composition comprises from about 50 to about 500 ppm of the triazole pyridine compound.
15. The method of claim 10 , wherein the polishing composition has a pH from about 6 to about 8.
16. The method of claim 10 , wherein the cationic silica abrasive particles have an isoelectric point greater than about 9.
17. The method of claim 10 , wherein the cationic silica abrasive particles comprise colloidal silica particles having have a permanent positive charge of at least 20 mV at a pH of greater than 6.
18. The method of claim 10 , comprising less than about 2 weight percent of the cationic silica abrasive particles.
19. The method of claim 10 , wherein the barrier comprises a tantalum nitride layer and wherein the abrading in (c) also removes a portion of the tantalum nitride layer and the dielectric layer from the substrate.
20. The method of claim 19 , wherein removal rates of the tantalum nitride layer and the dielectric layer in (c) are greater than a removal rate of copper in (c).
21. The method of claim 19 , wherein the dielectric layer is tetraethyl orthosilicate (TEOS).
22. A chemical mechanical polishing composition for polishing a substrate having copper, barrier, and dielectric layers, the polishing composition comprising:
a water based liquid carrier;
cationic silica abrasive particles treated with an aminosilane compound, the cationic silica abrasive particles dispersed in the liquid carrier, the cationic silica abrasive particles having a zeta potential of at least 10 mV in the polishing composition;
a triazole pyridine compound; and
wherein the polishing composition has a pH of greater than 6, and wherein the composition is substantially free of a per-compound oxidizer and further comprises an N-oxide compound oxidizer in a concentration of about 0.5 mM to about 100 mM.