IP Library Patent Application 16826409
Patent Application
App. No. 16/826,409

ADDITIVES TO IMPROVE PARTICLE DISPERSION FOR CMP SLURRY

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Patent No.
US None
App. No.
16/826,409
Abstract

The invention provides a chemical-mechanical polishing composition comprising (a) about 0.05 wt. % to about 10 wt. % of an abrasive; (b) a dispersant, wherein the dispersant is a linear or branched C 2 -C 10 alkylenediol; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 to about 6. The invention also provides a method of chemically-mechanically polishing a substrate by contacting the substrate with the inventive chemical-mechanical polishing composition.

Claims (35)

1 . A chemical-mechanical polishing composition comprising:

(a) about 0.05 wt. % to about 10 wt. % of an abrasive;

(b) a dispersant, wherein the dispersant is a linear or branched C 2 -C 10 alkylenediol; and

(c) water,

wherein the chemical-mechanical polishing composition has a pH of about 1 to about 7.

2 . The chemical-mechanical polishing composition of claim 1 , wherein the composition comprises about 2 wt. % to about 5 wt. % of the abrasive.

3 . The chemical-mechanical polishing composition of claim 1 , wherein the abrasive is selected from treated alumina, colloidal silica, fumed silica, surface-modified silica, and combinations thereof.

4 . The chemical-mechanical polishing composition of claim 1 , wherein the abrasive is colloidal silica.

5 . The chemical-mechanical polishing composition of claim 4 , wherein the colloidal silica has a mean particle size of about 10 nm to about 100 nm.

6 . The chemical-mechanical polishing composition of claim 1 , wherein the composition comprises about 0.5 wt. % to about 20 wt. % of the dispersant.

7 . The chemical-mechanical polishing composition of claim 1 , wherein the chemical-mechanical polishing composition has a pH of about 2 to about 5.

8 . The chemical-mechanical polishing composition of claim 1 , wherein the dispersant is a linear or branched C 2 -C 7 alkylenediol.

9 . The chemical-mechanical polishing composition of claim 1 , wherein the dispersant is selected from 1,3-butanediol, 1,4-butanediol, 1,5-pentanediol, 1,6-hexanediol, 1,7-heptanediol, and combinations thereof.

10 . The chemical-mechanical polishing composition of claim 1 , wherein the dispersant is 1,4-butanediol.

11 . The chemical-mechanical polishing composition of claim 1 , wherein the dispersant is a linear C 2 -C 10 alkylenediol.

12 . A method of chemically-mechanically polishing a substrate comprising:

(i) providing a substrate;

(ii) providing a polishing pad;

(iii) providing a chemical-mechanical polishing composition comprising:

(a) about 0.05 wt. % to about 10 wt. % of an abrasive;

(b) a dispersant, wherein the dispersant is a linear or branched C 2 -C 10 alkylenediol; and

(c) water,

wherein the chemical-mechanical polishing composition has a pH of about 2 to about 6;

(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and

(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of a surface of the substrate to polish the substrate.

13 . The method of claim 12 , wherein the composition comprises about 1 wt. % to about 5 wt. % of the abrasive.

14 . The method of claim 12 , wherein the abrasive is selected from treated alumina, colloidal silica, fumed silica, surface-modified silica, and combinations thereof.

15 . The method of claim 12 , wherein the abrasive is colloidal silica.

16 . The method of claim 15 , wherein the colloidal silica has a mean particle size of about 10 nm to about 100 nm.

17 . The method of claim 12 , wherein the composition comprises about 0.5 wt. % to about 20 wt. % of the dispersant.

18 . The method of claim 12 , wherein the chemical-mechanical polishing composition has a pH of about 2 to about 5.

19 . The method of claim 12 , wherein the dispersant is a linear or branched C 2 -C 7 alkylenediol.

20 . The method of claim 12 , wherein the dispersant is selected from 1,3-butanediol, 1,4-butanediol, 1,5-pentanediol, 1,6-hexanediol, 1,7-heptanediol, and combinations thereof.

21 . The method of claim 12 , wherein the dispersant is 1,4-butanediol.

22 . The method of claim 12 , wherein the substrate comprises a tungsten layer on a surface of the substrate, and wherein at least a portion of the tungsten layer is abraded to polish the substrate.

Assignments (7)
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
SECURITY AGREEMENT Recorded Jul 2, 2021
From: CMC MATERIALS, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 056752/0645 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2020
From: LEE, YANG-YAO; WU, HSIN-YEN; KO, CHENG -YUAN; LU, LUNG-TAI; HUANG, HUNG-TSUNG
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 052191/0335 →