Solidly mounted transversely excited film bulk acoustic resonator using rotated Z-cut lithium niobate
Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a lithium niobate (LN) plate having front and back surfaces. An acoustic Bragg reflector is sandwiched between the surface of the substrate and the back surface of the lithium niobite plate. An interdigital transducer (IDT) is formed on the front surface of the LN plate. The Euler angles of the lithium niobate plate are [0°, β, 90° ], where β is greater than or equal to −15° and less than 0°.
1. An acoustic resonator device comprising:
a substrate having a surface;
a single-crystal lithium niobate plate having front and back surfaces;
an acoustic Bragg reflector sandwiched between the surface of the substrate and the back surface of the lithium niobate plate; and
an interdigital transducer (IDT) formed on the front surface of the lithium niobate plate, wherein
Euler angles of the lithium niobate plate are [0°, β, 90° ], where β is greater than or equal to −15° and less than 0°.
2. The device of claim 1 , wherein β is greater than or equal to −11° and less than or equal to −5°.
3. The device of claim 1 , wherein β is greater than or equal to −10° and less than or equal to −7.5°.
4. The device of claim 1 , wherein the IDT and the lithium niobate plate are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the lithium niobate plate.
5. The device of claim 4 , wherein a direction of acoustic energy flow of the shear primary acoustic mode is substantially orthogonal to the front and back surfaces of the lithium niobite plate.
6. The device of claim 4 , wherein the acoustic Bragg reflector is configured to reflect the shear primary acoustic mode over a frequency range including a resonant frequency and an anti-resonance frequency of the device.
7. The device of claim 1 , wherein the acoustic Bragg reflector comprises:
a plurality of layers alternating between high acoustic impedance layers and low acoustic impedance layers, wherein
all of the plurality of layers are dielectric materials.
8. The device of claim 7 , wherein
the high acoustic impedance layers are one of silicon nitride and aluminum nitride, and
the low acoustic impedance layers are carbon-containing silicon oxide.
9. The device of claim 1 , further comprising:
a front-side dielectric layer formed on the front surface of the lithium niobate plate between the fingers of the IDT.
10. A filter device comprising:
a substrate having a surface;
a single-crystal lithium niobate plate having front and back surfaces;
an acoustic Bragg reflector sandwiched between the surface of the substrate and the back surface of the lithium niobate plate; and
a conductor pattern formed on the front surface of the lithium niobate plate, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators including a shunt resonator and a series resonator, wherein
Euler angles of the lithium niobate plate are [0°, β, 90° ], where β is greater than or equal to −15° and less than 0°.
11. The filter device of claim 10 , wherein β is greater than or equal to −11° and less than or equal to −5°.
12. The filter device of claim 10 , wherein β is greater than or equal to −10° and less than or equal to −7.5°.
13. The filter device of claim 10 , wherein the lithium niobate plate and all of the plurality of IDTs are configured such that respective radio frequency signals applied to the plurality of IDTs excite respective shear primary acoustic modes within the lithium niobate plate.
14. The filter device of claim 13 , wherein a direction of acoustic energy flow of all of the primary acoustic modes is substantially orthogonal to the front and back surfaces of the lithium niobate plate.
15. The filter device of claim 13 , where the acoustic Bragg reflector is configured to reflect the primary shear acoustic modes over a frequency range including resonant and anti-resonance frequencies of all of the plurality of resonators.
16. The filter device of claim 10 , further comprising:
a first dielectric layer having a first thickness deposited over the IDT of the shunt resonator; and
a second dielectric layer having a second thickness less than the first thickness deposited over the IDT of the series resonator.
17. The filter device of claim 16 , wherein
the second thickness is greater than or equal to 0, and
the first thickness is less than or equal to 500 nm.
18. The filter device of claim 10 , wherein the acoustic Bragg reflector comprises:
a plurality of dielectric layers alternating between high acoustic impedance layers and low acoustic impedance layers.
19. The filter device of claim 18 , wherein
the high acoustic impedance layers are one of silicon nitride and aluminum nitride, and
the low acoustic impedance layers are carbon-containing silicon oxide.
20. A method of fabricating an acoustic resonator device comprising:
forming an acoustic Bragg reflector by depositing material layers on one or both of a surface of a device substrate and a first surface of a single-crystal lithium niobate plate having a second surface attached to a sacrificial substrate;
bonding the lithium niobate plate attached to the sacrificial substrate to the device substrate such that the layers of the acoustic Bragg reflector are sandwiched between the first surface of the lithium niobate plate and the device substrate;
removing the sacrificial substrate to expose the second surface of the lithium niobate plate; and
forming an interdigital transducer (IDT) on the second surface of the lithium niobate plate, wherein
the Euler angles of the lithium niobate plate are [0°, β, 90° ], where β is greater than or equal to −15° and less than 0°.