Memory cell arrangement and method thereof
A memory cell arrangement is provided that may include: one or more memory cells, each memory cell of the one or more memory cells including: a field-effect transistor structure; a plurality of first control nodes; a plurality of first capacitor structures, a second control node; and a second capacitor structure including a first electrode connected to the second control node and a second electrode connected to a gate region of the field-effect transistor. Each of the plurality of first capacitor structures includes a first electrode connected to a corresponding first control node of the plurality of first control nodes, a second electrode connected to the gate region of the field-effect transistor structure, and a spontaneous-polarizable region disposed between the first electrode and the second electrode of the first capacitor structure.
1. A memory cell arrangement, comprising:
one or more memory cells, each memory cell of the one or more memory cells comprising:
a field-effect transistor structure;
a plurality of first control nodes;
a plurality of first capacitor structures, each of the plurality of first capacitor structures comprising a first electrode connected to a corresponding first control node of the plurality of first control nodes, a second electrode connected to a gate region of the field-effect transistor structure, and a spontaneous-polarizable region disposed between the first electrode and the second electrode of the first capacitor structure;
a second control node;
a second capacitor structure comprising a first electrode connected to the second control node and a second electrode connected to the gate region of the field-effect transistor structure; and
a control circuit configured to read a selected first capacitor structure of a selected memory cell of the one or more memory cells; wherein reading the selected first capacitor structure comprises:
providing a read-voltage to a first control-line connected to the first control node of the selected first capacitor structure of the selected memory cell; and
providing a first lever-voltage to a second control-line connected to the second control node of the selected memory cell,
wherein the control circuit is further configured to prevent a disturbance caused by non-selected first capacitor structures of the selected memory cell during reading the selected first capacitor structure of the selected memory cell, wherein prevent the disturbance comprises:
providing a first inhibit-voltage to each first control-line connected to the first control nodes of the non-selected first capacitor structures of the selected memory cell.
2. The memory cell arrangement of claim 1 ,
wherein each of the plurality of first capacitor structures is configured to be in one of at least two memory states.
3. The memory cell arrangement of claim 1 ,
wherein each first capacitor structure of the plurality of first capacitor structures has a respective first capacitance and wherein the second capacitor structure has a second capacitance different from one or more of first capacitances.
4. The memory cell arrangement of claim 1 ,
each memory cell of the one or more memory cells further comprising:
a third control node coupled to a first region and/or second region of the field-effect transistor structure.
5. The memory cell arrangement of claim 1 ,
wherein the one or more memory cells are a plurality of memory cells, the memory cell arrangement further comprising:
a plurality of first control-lines comprising one or more first subsets of first control-lines, each first control-line of a first subset of first control-lines of the one or more first subsets of first control-lines connected to a corresponding first control node of a first subset of memory cells of the plurality of memory cells; and
one or more second control-lines connected to the second control node of each memory cell of a second subset of memory cells of the plurality of memory cells.
6. The memory cell arrangement of claim 5 , further comprising:
one or more third control-lines connected to a third control node of each memory cell of a corresponding first subset of memory cells of the one or more first subsets of memory cells, wherein the third control node is coupled to a first region and/or second region of the respective field-effect transistor structure.
7. The memory cell arrangement of claim 1 ,
wherein the control circuit is further configured to write a selected first capacitor structure of a selected memory cell of a plurality of memory cells;
wherein writing the selected first capacitor structure comprises:
providing a write-voltage to a first control-line connected to the first control node of the selected first capacitor structure of the selected memory cell; and
providing a first lever-voltage to a second control-line connected to the second control node of the selected memory cell.
8. The memory cell arrangement of claim 7 ,
each memory cell of the one or more memory cells further comprising:
a third control node coupled to a first region and/or second region of the field-effect transistor structure;
wherein writing the selected first capacitor structure of the selected memory cell further comprises:
providing a first control-voltage to a third control-line connected to the third control node of the selected memory cell.
9. The memory cell arrangement of claim 7 ,
wherein the control circuit is further configured to prevent a writing of the non-selected first capacitor structures of the selected memory cell during writing the selected first capacitor structure of the selected memory cell, wherein prevent a writing of the non-selected first capacitor structures comprises:
providing a first inhibit-voltage to each of a plurality of first control-lines connected to the first control nodes of the non-selected first capacitor structures of the selected memory cell.
10. The memory cell arrangement of claim 7 ,
wherein the control circuit is further configured to prevent a writing of the first capacitor structures of one or more non-selected memory cells of the plurality of memory cells during writing the selected first capacitor structure of the selected memory cell, wherein prevent a writing of one or more non-selected memory cells comprises:
providing a second lever-voltage to a second control-line connected to the second control node of the non-selected memory cell in the case that the write-voltage is provided to the first control-line connected to the first control node of the non-selected memory cell, wherein a voltage value of the second lever-voltage is different from the voltage value of the first lever-voltage.
11. The memory cell arrangement of claim 7 ,
wherein the control circuit is further configured to prevent a writing of the first capacitor structures of one or more non-selected memory cells of the plurality of memory cells during writing the selected first capacitor structure of the selected memory cell, wherein prevent a writing of one or more non-selected memory cells comprises:
providing a second inhibit-voltage to one or more first control-lines connected to the first control nodes of the one or more non-selected memory cells, wherein a voltage value of the second inhibit-voltage [value] is different from the voltage value of the write-voltage.
12. The memory cell arrangement of claim 1 ,
each memory cell of the one or more memory cells further comprising:
a third control node coupled to a first region and/or second region of the field-effect transistor structure;
wherein reading the selected first capacitor structure of the selected memory cell further comprises:
providing a first control-voltage to a third control-line connected to the third control node of the selected memory cell.
13. The memory cell arrangement of claim 1 ,
wherein the control circuit is further configured to prevent a disturbance caused by the first capacitor structures of one or more non-selected memory cells of the one or more memory cells during reading the selected first capacitor structure of the selected memory cell, wherein prevent the disturb comprises:
providing a second lever-voltage to a second control-line connected to the second control node of the non-selected memory cell in the case that the read-voltage is provided to the first control-line connected to the first control node of the non-selected memory cell, wherein the voltage value of the second lever-voltage is different from the voltage value of the first lever-voltage.
14. The memory cell arrangement of claim 1 ,
wherein the control circuit is further configured to prevent a disturbance caused by the first capacitor structures of one or more non-selected memory cells of the one or more memory cells during reading the selected first capacitor structure of the selected memory cell, wherein prevent the disturbance comprises:
providing a second inhibit-voltage to one or more first control-lines connected to the first control nodes of the non-selected memory cell, wherein the voltage value of the second inhibit-voltage [value] is different from the voltage value of the read-voltage.
15. A memory cell arrangement, comprising:
a plurality of word-lines; and
one or more memory cells, each memory cell of the one or more memory cells comprising:
a field-effect transistor structure;
a plurality of control nodes;
a plurality of capacitor structures, each of the plurality of capacitor structures comprising a first electrode connected to a corresponding control node of the plurality of control nodes, a second electrode connected to a gate region of the field-effect transistor structure, and a spontaneous-polarizable region disposed between the first electrode and the second electrode of the capacitor structure,
wherein the first electrode of a first capacitor structure of the plurality of capacitor structures is electrically conductively connected to a first word-line of the plurality of word-lines, and
wherein the first electrode of a second capacitor structure of the plurality of capacitor structures is electrically conductively connected to a second word-line of the plurality of word-lines.
16. The memory cell arrangement of claim 15 ,
wherein the one or more memory cells are a plurality of memory cells in a NOR, AND, or NAND configuration.
17. A method for operating a memory cell, the method comprising:
applying, via a corresponding word-line, a control voltage to a first control node selected from a plurality of first control nodes of a memory cell, each of the plurality of first control nodes being connected to a corresponding first capacitor structure of a plurality of first capacitor structures of the memory cell;
applying, via a corresponding lever-line, a lever voltage to a second control node of the memory cell, the second control node being connected to a second capacitor structure of the memory cell, wherein the memory cell comprises the second capacitor structure in addition to the plurality of first capacitor structures; and,
applying a bit-line voltage to a third control node of the memory cell, the third control node being connected to at least one source/drain region of a transistor of the memory cell.
18. The method of claim 17 , wherein the control voltage is a write voltage or a read voltage.
19. A memory cell arrangement, comprising:
one or more memory cells, each memory cell of the one or more memory cells comprising:
a field-effect transistor structure;
a plurality of first control nodes;
a plurality of first capacitor structures, each of the plurality of first capacitor structures comprising a first electrode connected to a corresponding first control node of the plurality of first control nodes, a second electrode connected to a gate region of the field-effect transistor structure, and a spontaneous-polarizable region disposed between the first electrode and the second electrode of the first capacitor structure;
a second control node; and, in addition to the plurality of first capacitor structures,
a second capacitor structure comprising a first electrode connected to the second control node and a second electrode connected to the gate region of the field-effect transistor.
20. The memory cell arrangement of claim 19 ,
wherein the plurality of first capacitor structures are a plurality of memory capacitor structures, and
wherein the second capacitor structure is a lever capacitor structure.
21. The memory cell arrangement of claim 19 , further comprising:
one or more lever-lines; and
a plurality of word-lines,
wherein the first electrode of each of the plurality of first capacitor structures is electrically conductively connected to a corresponding word-line of a plurality of word-lines, and
wherein the first electrode of the second capacitor structure is electrically conductively connected to a corresponding lever-line of the one or more lever-lines.