Semiconductor device and power conversion device
A semiconductor device having a high cutoff resistance capable of suppressing local current/electric field concentration and current concentration at a chip termination portion due to an electric field variation between IGBT cells due to a shape variation and impurity variation during manufacturing. The semiconductor device is characterized by including an emitter electrode formed on a front surface of a semiconductor substrate via an interlayer insulating film, a collector electrode formed on a back surface of the semiconductor substrate, a first semiconductor layer of a first conductivity type in contact with the collector electrode, a second semiconductor layer of a second conductivity type, a central area cell, and an outer peripheral area cell located outside the central area cell.
1. A semiconductor device, comprising:
an emitter electrode formed on a front surface of a semiconductor substrate via an interlayer insulating film;
a collector electrode formed on a back surface of the semiconductor substrate;
a first semiconductor layer of a first conductivity type in contact with the collector electrode and formed on the back surface of the semiconductor substrate;
a second semiconductor layer of a second conductivity type formed on the first semiconductor layer;
a central area cell disposed along a front surface of the semiconductor substrate; and
an outer peripheral area cell located outside the central area cell in a planar direction of the semiconductor substrate and disposed between the central area cell and a chip termination guard ring area, wherein
the central area cell includes:
a trench formed between the emitter electrode and the semiconductor substrate;
a gate electrode formed inside the trench via a gate insulating film and insulated from the emitter electrode via the interlayer insulating film;
a third semiconductor layer of a second conductivity type formed in contact with the gate insulating film and having a higher impurity concentration than the semiconductor substrate;
a fourth semiconductor layer of a first conductivity type formed in contact with a semiconductor substrate side of the emitter electrode via an emitter contact and having a higher impurity concentration than the first semiconductor layer;
a fifth semiconductor layer of a first conductivity type in contact with the gate insulating film, formed on the semiconductor substrate side of the third semiconductor layer, and having a lower impurity concentration than the fourth semiconductor layer;
a sixth semiconductor layer of a first conductivity type in contact with a front surface of the fourth semiconductor layer on the semiconductor substrate side, formed so as to project from the fifth semiconductor layer toward the semiconductor substrate side, and having a lower carrier concentration than the fourth semiconductor layer; and
a seventh semiconductor layer of a second conductivity type formed in contact with a front surface of the sixth semiconductor layer on a collector electrode side and having a higher impurity concentration than the semiconductor substrate, and
the outer peripheral area cell includes the trench, the gate electrode, the fourth semiconductor layer, the fifth semiconductor layer, and the sixth semiconductor layer, and the outer peripheral area cell does not include at least one of the third semiconductor layer and the seventh semiconductor layer.
2. The semiconductor device according to claim 1 , wherein
the outer peripheral area cell includes a third semiconductor layer of a second conductivity type formed in contact with the gate insulating film and having a higher impurity concentration than the semiconductor substrate.
3. The semiconductor device according to claim 1 , wherein
the outer peripheral area cell includes a seventh semiconductor layer of a second conductivity type formed in contact with a front surface of the sixth semiconductor layer on the collector electrode side and having an higher impurity concentration than the semiconductor substrate and a lower impurity concentration than the second semiconductor layer.
4. The semiconductor device according to claim 1 , further comprising:
an intermediate area cell between the central area cell and the outer peripheral area cell in a planar direction of the semiconductor substrate, wherein
the intermediate area cell includes the trench, the gate electrode, the fourth semiconductor layer, the fifth semiconductor layer, the sixth semiconductor layer, and the seventh semiconductor layer, and does not include the third semiconductor layer.
5. The semiconductor device according to claim 1 , wherein
the gate electrode is a trench gate electrode formed along a shape of the trench inside the trench.
6. The semiconductor device according to claim 1 , wherein
the gate electrode is a sidewall shaped side gate electrode formed along a side wall of the trench inside the trench, and
a Poly-Si field plate connected to the emitter electrode via an emitter contact inside the trench is further provided.
7. The semiconductor device according to claim 1 , wherein
the gate electrode is disposed in a stripe shape in a plane direction of the semiconductor substrate.
8. A power conversion device, comprising:
a pair of DC terminals;
the same number of AC terminals as the number of phases of AC; and
a switching leg that is connected between the pair of DC terminals and in which two parallel circuits of a switching element and a diode of opposite polarity are connected in series, wherein
an interconnection point of parallel circuits constitutes the same number of power conversion units as the number of phases of AC connected to different AC terminals, and
the switching element is the semiconductor device according to claim 1 .