Granted Patent B2

US 12,477,883 · App. 17/733,892 · Granted Nov 18, 2025

Inventors: Martin Behringer (Regensburg, DE); Andreas Biebersdorf (Regensburg, DE); Ruth Boss (Neutraubling, DE); Erwin Lang (Regensburg, DE); Tobias Meyer (Kelheim, DE); Alexander Pfeuffer (Regensburg, DE); Marc Philippens (Regensburg, DE); Julia Stolz (Regensburg, DE); Tansen Varghese (Regensburg, DE); Sebastian Wittmann (Regenstauf, DE); Siegfried Herrmann (Neukirchen, DE); Berthold Hahn (Hemau-Hohenschambach, DE); Bruno Jentzsch (Regensburg, DE); Korbinian Perzlmaier (Regensburg, DE); Peter Stauss (Regensburg, DE); Petrus Sundgren (Lappersdorf, DE); Jens Mueller (Regensburg, DE); Kerstin Neveling (Pentling, DE); Frank Singer (Regenstauf, DE); Christian Mueller (Deuerling, DE)

Assignee: OSRAM Opto Semiconductors GmbH

H10H29/142H10H20/814H10H20/819H10H20/855

Abstract

Claims (7)

1 . μ-LED module comprising at least one layer stack forming a base module, with a first layer formed on a carrier, an active layer and a second layer, wherein a first contact is formed in or on a surface region of the second layer facing away from the carrier, and a second contact is formed in or on the surface region of the first layer facing away from the carrier, and the first and second contact are spaced apart from one another,

wherein the second contact is electrically insulated from the active layer and the second layer by means of a dielectric and is formed to and on the surface region of the second layer facing away from the carrier.

2 . The μ-LED module according to claim 1 , in which a light-emitting surface is formed on a side of the stack of layers facing away from the first and second contact.

3 . The μ-LED module according to claim 1 , characterized in that the μ-LED module comprises a plurality of base modules arranged in a matrix of at least one row and at least one column.

4 . The μ-LED module according to claim 3 , characterized in that the base modules of two adjacent lines are oriented in opposite directions so that contacts of the same polarity, in particular first contacts, are arranged adjacent to each other.

5 . The μ-LED module according to claim 3 , in which a μ-LED adjacent to the μ-LED module is separated by a deep flanking structuring.

6 . The μ-LED module according to claim 5 , in which regions of the active layer which run adjacent to the deep flanking structure have an elevated band structure produced in particular by quantum well intermixing.

Assignments (2)

Priority Claims (10)

Continuity (3)

References Cited (390)