IP Library Granted Patent US 12,395,173
Granted Patent B2
US 12,395,173 · App. 17/745,435 · Granted Aug 19, 2025

Integrated circuit that applies different data interface terminations during and after write data reception

Inventors: Kyung Suk Oh (Cupertino, CA); Ian P. Shaeffer (Los Gatos, CA)
Assignee: Rambus Inc.
H03K19/0005G06F3/0605G06F3/0659G06F3/0685G06F13/4086G11C11/401G11C11/4063G11C11/4093G11C11/41G11C11/413G11C11/417G11C11/419G11C16/06G11C16/26G11C16/32H03K19/017545
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Quick Facts
Patent No.
US 12,395,173
App. No.
17/745,435
Granted
Aug 19, 2025
Kind
B2
Abstract

In an integrated circuit component having a command interface to receive commands, a data interface to receive write data during a write-data reception interval, and first and second registers, control circuitry within the integrated circuit component responds to one or more of the commands by storing within the first register and the second register, respectively, a first control value that specifies a first termination to be applied to the data interface during the write-data reception interval, and a second control value that specifies a second termination to be applied to the data interface after the write-data reception interval transpires.

Claims (47)

1. An integrated circuit component comprising:

a data interface;

a command interface;

a chip-select input;

one or more programmable registers to store first and second termination control values; and

control circuitry to:

enable the command interface to receive a memory access command if a chip-select signal is asserted at the chip-select input during a first interval and, if the memory access command indicates a memory write operation, to:

transition a termination coupled to the data interface from a first impedance specified by the first control value to a second impedance specified by the second control value;

enable the data interface to receive write data during a write-data reception interval that transpires after the termination coupled to the data interface has transitioned to the second impedance; and

transition the termination coupled to the data interface from the second impedance to the first impedance after the write-data reception interval transpires; and

maintain the termination coupled to the data interface at the first impedance throughout a time period that would otherwise constitute the write-data reception interval if the chip-select signal is not asserted at the chip-select input during the first interval.

2. The integrated circuit component of claim 1 wherein the control circuitry to transition the termination coupled to the data interface from the first impedance to the second impedance comprises circuitry to transition the termination from the first impedance to the second impedance a predetermined time prior to reception of the write data via the data interface.

3. The integrated circuit component of claim 1 wherein the control circuitry to transition the termination coupled to the data interface from the first impedance to the second impedance comprises circuitry to transition the termination from the first impedance to the second impedance a predetermined time after reception of the command indicating the memory write operation.

4. The integrated circuit component of claim 1 wherein the control circuitry to transition the termination coupled to the data interface from the second impedance to the first impedance after the write-data reception interval transpires comprises circuitry to transition the termination from the second impedance to the first impedance a predetermined time after conclusion of the write-data reception interval.

5. The integrated circuit component of claim 1 wherein the data interface comprises a plurality of data input/output (I/O) nodes to be coupled to respective external data-signaling lines, and wherein the control circuitry to transition the termination to the second impedance comprises circuitry to switchably couple, to each of the plurality of data I/O nodes, a respective first plurality of termination load elements.

6. The integrated circuit component of claim 5 wherein the control circuitry to transition the termination to the first impedance comprises circuitry to switchably couple, to each of the plurality of data I/O nodes, a respective second plurality of termination load elements, the second plurality of termination load elements including at least one termination load element not included in the first plurality of termination load elements.

7. The integrated circuit component of claim 5 wherein the data interface comprises output drivers coupled respectively to the data I/O nodes, and wherein the circuitry to switchably couple the respective first plurality of termination load elements to each of the plurality of I/O nodes comprises circuitry to couple, to each of the plurality of I/O nodes, a plurality of pull-up elements and a plurality of pull-down elements within a respective one of the output drivers.

8. The integrated circuit component of claim 1 further comprising circuitry to write the first and second termination control values, after reception thereof via the command interface, into the one or more programmable registers for storage therein.

9. The integrated circuit component of claim 8 wherein the circuitry to write the first and second termination control values into the one or more programmable registers comprises circuitry to write the first and second termination control values into the one or more programmable registers in response to a register-write command received via the command interface, wherein at least one of the first and second termination control values is received via the command interface as part of the register-write command.

10. The integrated circuit component of claim 8 wherein the circuitry to write the first and second termination control values into the one or more programmable registers comprises circuitry to write, into the one or more programmable registers, first and second digital bit patterns indicative of the first and second impedances, respectively.

11. A method of operation within an integrated circuit component having a data interface, a command interface, a chip-select input, and one or more programmable registers, the method comprising:

storing first and second termination control values within the one or more programmable registers;

if a chip-select signal is asserted at the chip-select input during the first interval, receiving a command via the command interface;

if the command indicates a memory write operation:

transitioning a termination coupled to the data interface from a first impedance specified by the first control value to a second impedance specified by the second control value;

receiving write data via the data interface during a write-data reception interval that transpires after the termination coupled to the data interface has transitioned to the second impedance; and

after receiving the write data via the data interface, transitioning the termination coupled to the data interface from the second impedance to the first impedance; and

if the chip-select signal is not asserted at the chip-select input during the first interval, maintaining the termination coupled to the data interface at the first impedance throughout a time period that would otherwise constitute the write-data reception interval.

12. The method of claim 11 wherein transitioning the termination coupled to the data interface from the first impedance to the second impedance comprises transitioning the termination from the first impedance to the second impedance a predetermined time prior to reception of the write data via the data interface.

13. The method of claim 11 wherein transitioning the termination coupled to the data interface from the first impedance to the second impedance comprises transitioning the termination from the first impedance to the second impedance a predetermined time after reception of the command indicating the memory write operation.

14. The method of claim 11 wherein transitioning the termination coupled to the data interface from the second impedance to the first impedance comprises transitioning the termination from the second impedance to the first impedance a predetermined time after conclusion of the write-data reception interval.

15. The method of claim 11 wherein the data interface comprises a plurality of data input/output (I/O) nodes to be coupled to respective external data-signaling lines, and wherein transitioning the termination to the second impedance comprises coupling, to each of the plurality of data I/O nodes, a respective first plurality of termination load elements.

16. The method of claim 15 wherein transitioning the termination to the first impedance comprises coupling, to each of the plurality of data I/O nodes, a respective second plurality of termination load elements, the second plurality of termination load elements including at least one termination load element not included in the first plurality of termination load elements.

17. The method of claim 15 wherein the data interface comprises output drivers coupled respectively to the data I/O nodes, and wherein coupling the respective first plurality of termination load elements to each of the plurality of I/O nodes comprises coupling, to each of the plurality of I/O nodes, a plurality of pull-up elements and a plurality of pull-down elements within a respective one of the output drivers.

18. The method of claim 11 further comprising receiving the first and second termination control values via the command interface.

19. The method of claim 11 wherein storing first and second termination control values within the one or more programmable registers comprises storing first and second digital bit patterns indicative of the first and second impedances, respectively.

20. An integrated circuit component comprising:

a data interface;

a command interface;

a chip-select input;

means for storing first and second termination control values; and

means for:

enabling the command interface to receive a memory access command if a chip-select signal is asserted at the chip-select input during a first interval and, if the memory access command indicates a memory write operation, for:

transitioning a termination coupled to the data interface from a first impedance specified by the first control value to a second impedance specified by the second control value;

enabling the data interface to receive write data during a write-data reception interval that transpires after the termination coupled to the data interface has transitioned to the second impedance; and

transitioning the termination coupled to the data interface from the second impedance to the first impedance after the write-data reception interval transpires; and

maintaining the termination coupled to the data interface at the first impedance throughout a time period that would otherwise constitute the write-data reception interval if the chip-select signal is not asserted at the chip-select input during the first interval.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 15, 2025
From: RAMBUS INC.
To: SIGNAL LLP
Reel/Frame 073085/0650 →
Continuity (17)
Continuation 16940349 · Jul 27, 2020
Continuation 16853658 · Apr 20, 2020
Continuation 16356243 · Mar 18, 2019
Continuation 16051291 · Jul 31, 2018
Continuation 15581480 · Apr 28, 2017
Continuation 15132532 · Apr 19, 2016
Continuation 14857794 · Sep 17, 2015
Continuation 14523923 · Oct 26, 2014
Continuation 13952393 · Jul 26, 2013
Continuation 13480298 · May 24, 2012
Continuation 13180550 · Jul 12, 2011
Continuation 13043946 · Mar 9, 2011
Continuation 12861771 · Aug 23, 2010
Continuation 12507794 · Jul 22, 2009
Continuation 12199726 · Aug 27, 2008
Continuation 11422022 · Jun 2, 2006
Related Publication 20220345131A1 · Oct 27, 2022
References Cited (159)
US 4131942A · Gillett et al. · 1978 [cited by applicant]
US 5467455A · Gay et al. · 1995 [cited by applicant]
US 5553250A · Miyagawa et al. · 1996 [cited by applicant]
US 5663661A · Dillon et al. · 1997 [cited by applicant]
US 5663663A · Cao et al. · 1997 [cited by applicant]
US 5666078A · Lamphier et al. · 1997 [cited by applicant]
US 5982191A · Starr · 1999 [cited by applicant]
US 5995894A · Wendte · 1999 [cited by applicant]
US 6060907A · Vishwanthaiah et al. · 2000 [cited by applicant]
US 6069539A · Sanders et al. · 2000 [cited by applicant]
US 6157206A · Taylor et al. · 2000 [cited by applicant]
US 6198307B1 · Garlepp et al. · 2001 [cited by applicant]
US 6232792B1 · Starr · 2001 [cited by applicant]
US 6308232B1 · Gasbarro · 2001 [cited by applicant]
US 6356105B1 · Volk · 2002 [cited by applicant]
US 6356106B1 · Greeff · 2002 [cited by examiner]
US 6424200B1 · McNitt et al. · 2002 [cited by applicant]
US 6560666B1 · Harriman et al. · 2003 [cited by applicant]
US 6639423B2 · Martin et al. · 2003 [cited by applicant]
US 6675272B2 · Ware et al. · 2004 [cited by applicant]
US 6762620B2 · Jang et al. · 2004 [cited by applicant]
US 6781405B2 · Rajan et al. · 2004 [cited by applicant]
US 6856169B2 · Frans et al. · 2005 [cited by applicant]
US 6894691B2 · Juenger · 2005 [cited by applicant]
US 6924660B2 · Nguyen et al. · 2005 [cited by applicant]
US 6965529B2 · Zumkehr et al. · 2005 [cited by applicant]
US 6980020B2 · Best et al. · 2005 [cited by applicant]
US 6981089B2 · Dodd et al. · 2005 [cited by applicant]
US 7034565B2 · Lee · 2006 [cited by applicant]
US 7092299B2 · Kwak et al. · 2006 [cited by applicant]
US 7102200B2 · Fan et al. · 2006 [cited by applicant]
US 7103792B2 · Moon · 2006 [cited by applicant]
US 7123047B2 · Lim · 2006 [cited by applicant]
US 7138823B2 · Janzen et al. · 2006 [cited by applicant]
US 7148721B2 · Park · 2006 [cited by applicant]
US 7205787B1 · Massoumi · 2007 [cited by examiner]
US 7342411B2 · Vergis et al. · 2008 [cited by applicant]
US 7372293B2 · Cox et al. · 2008 [cited by applicant]
US 7414426B2 · Cox et al. · 2008 [cited by applicant]
US 7432731B2 · Bains et al. · 2008 [cited by applicant]
US 7516281B2 · LaBerge · 2009 [cited by applicant]
US 20020178318A1 · Muff · 2002 [cited by applicant]
US 20030012046A1 · Lee et al. · 2003 [cited by applicant]
US 20030016550A1 · Yoo · 2003 [cited by examiner]
US 20030039151A1 · Matsui · 2003 [cited by examiner]
US 20030126338A1 · Dodd et al. · 2003 [cited by applicant]
US 20030234664A1 · Yamagata · 2003 [cited by applicant]
US 20030235084A1 · Zumkehr et al. · 2003 [cited by applicant]
US 20040098528A1 · Janzen · 2004 [cited by applicant]
US 20040201402A1 · Rajan et al. · 2004 [cited by applicant]
US 20040228196A1 · Kwak · 2004 [cited by examiner]
US 20050007835A1 · Lee et al. · 2005 [cited by applicant]
US 20050040845A1 · Park · 2005 [cited by applicant]
US 20050048973A1 · Hou et al. · 2005 [cited by applicant]
US 20050185480A1 · Mukker · 2005 [cited by examiner]
US 20050212551A1 · So et al. · 2005 [cited by applicant]
US 20050226080A1 · Lee · 2005 [cited by applicant]
US 20050228912A1 · Walker et al. · 2005 [cited by applicant]
US 20050264316A1 · Atkinson · 2005 [cited by applicant]
US 20060007761A1 · Ware et al. · 2006 [cited by applicant]
US 20060034134A1 · Choi et al. · 2006 [cited by applicant]
US 20060071683A1 · Best et al. · 2006 [cited by applicant]
US 20060077731A1 · Ware et al. · 2006 [cited by applicant]
US 20060106951A1 · Bains · 2006 [cited by applicant]
US 20060277355A1 · Ellsberry et al. · 2006 [cited by applicant]
US 20070007992A1 · Bains et al. · 2007 [cited by applicant]
US 20070070717A1 · Kim · 2007 [cited by applicant]
US 20070126463A1 · Cox · 2007 [cited by examiner]
US 20070126465A1 · Cox et al. · 2007 [cited by applicant]
US 20070247185A1 · Oie · 2007 [cited by examiner]
US 20080144382A1 · Asauchi et al. · 2008 [cited by applicant]
US 20090201711A1 · Solomon et al. · 2009 [cited by applicant]
US 20090230989A1 · Murayama et al. · 2009 [cited by applicant]
US 20090303802A1 · Lee · 2009 [cited by applicant]
US 20090313410A1 · Jeong et al. · 2009 [cited by applicant]
US 20100027356A1 · Shaeffer et al. · 2010 [cited by applicant]
US 20100226185A1 · Lee · 2010 [cited by applicant]
US 20110057720A1 · Komyo et al. · 2011 [cited by applicant]
US 20110110168A1 · Sung et al. · 2011 [cited by applicant]
US 20110242916A1 · Seol et al. · 2011 [cited by applicant]
US 20110314200A1 · Wilson et al. · 2011 [cited by applicant]
US 20130162287A1 · Ko · 2013 [cited by applicant]
US 20140002131A1 · Shaeffer · 2014 [cited by applicant]
US 20140192583A1 · Rajan · 2014 [cited by examiner]
US 20150023112A1 · Eom et al. · 2015 [cited by applicant]
US 20160028395A1 · Bains et al. · 2016 [cited by applicant]
US 20180166112A1 · Kwon et al. · 2018 [cited by applicant]
DE 102005036528 · 2007 [cited by applicant]
EP 0531630A1 · 1993 [cited by applicant]
EP 0693730A1 · 1996 [cited by applicant]
JP 07084863 · 1995 [cited by applicant]
JP 10198473 · 1998 [cited by applicant]
JP 2003283322 · 2003 [cited by applicant]
WO WO1997002658 · 1997 [cited by applicant]
WO WO1998004041 · 1998 [cited by applicant]
WO WO2000041300 · 2000 [cited by applicant]
WO WO2000070474 · 2000 [cited by applicant]
WO WO2004061690A3 · 2004 [cited by applicant]
WO WO2005119471 · 2005 [cited by applicant]
WO WO2007078496 · 2007 [cited by applicant]
EP Extended European Search Report with Mail Date Sep. 25, 2023 re: EP Appln. No. 23175747.7. 9 pages. [cited by applicant]
“JEDEC Standard DDR2 Specification JESD79-2B”, JEDEC Solid State Technology Association, Jan. 2005, pp. 1-113. 113 Pages. [cited by applicant]
CN First Office Action dated Aug. 4, 2010 in CN Application No. 200780020133.3, Includes English Translation. 11 pages. [cited by applicant]
CN Office Action dated Feb. 21, 2011 re CN Application No. 200780020133.3, Includes English Translation. 6 pages. [cited by applicant]
CN Response dated Dec. 20, 2010 re CN Application No. 200780020133.3. 7 pages. [cited by applicant]
CN Response dated Mar. 29, 2011 to the Second Office Action dated Feb. 21, 2011 re CN Application No. 200780020133.3, Includes English Translation. 12 pages. [cited by applicant]
Elpida Memory, Inc., “512M bits DDR3 SDRAM,” Preliminary Data Sheet, Document No. E0785E11, Ver. 1.1, Feb. 2006, www.elpida.com. 4 pages. [cited by applicant]
EP—Communication Pursuant to Article 94(3) EPC with mail date Jul. 28, 2016 re EP Appln. No. 14195760.5. 6 Pages. [cited by applicant]
EP Communication—Extended European Search Report with Mail Date Dec. 4, 2020 re: EP Appln. No. 20186614.2. 7 pages. [cited by applicant]
EP Examination Report dated May 31, 2013 in EP Application No. 11193683.7. 5 pages. [cited by applicant]
EP Extended European Search Report dated Dec. 12, 2012 re EP Application No. 11193654.8. 11 pages. [cited by applicant]
EP Extended Search Report dated Jan. 29, 2010 re EP Application No. 09163220.8. 9 pages. [cited by applicant]
EP Extended Search Report dated Mar. 18, 2015 re EP Application No. 14195760.5. 6 pages. [cited by applicant]
EP Extended Search Report dated May 3, 2012 re EP Application No. 11193683.7. 6 pages. [cited by applicant]
EP Office Communication dated Aug. 12, 2009 for EP Application No. 07853485.6. 3 pages. [cited by applicant]
EP Office Communication dated Aug. 8, 2013 in EP Application No. 11193683.7. 3 pages. [cited by applicant]
EP Office Communication dated Sep. 28, 2010 in EP Application No. 09163220.8. 1 page. [cited by applicant]
EP Partial European Search Report dated Mar. 7, 2012 re EP Application No. 1193654.8. 6 pages. [cited by applicant]
EP Partial European Search Report dated Nov. 11, 2009 in EP Application No. 09163220.8. 4 pages. [cited by applicant]
EP Response dated Apr. 7, 2010 re EP Application No. 07853485.6, Includes New Claims 1-13 (Clear and Highlighted Amendments) and New Description pp. 2 and 2a. 14 pages. [cited by applicant]
EP Response dated Jul. 15, 2013 in EP Application No. 11193654.8. 21 pages. [cited by applicant]
EP Response dated Jun. 18, 2015 in EP Application No. 14195760.5, Includes New Claims (Highlighted and Clear copies) and Claim Chart. 22 pages. [cited by applicant]
EP Response dated Mar. 31, 2011 in EP Application No. 09163220.8. 29 pages. [cited by applicant]
EP Response dated Oct. 10, 2012 re EP Application No. 11193683.7. 16 pages. [cited by applicant]
EP Response dated Oct. 2, 2013 in EP Application No. 11193683.7, Includes New Claims (Clear and Highlighted Copies) and New Description pp. 2, 8, and 14. 15 pages. [cited by applicant]
EP Response filed on Jul. 2, 2021 in Response to the Extended European Search Report Dated Dec. 4, 2020 and the Communication Pursuant to Rules 69 EPC and 70a (1) EPC Dated Jan. 15, 2021 re: EP Appln. No. 20186614.2. 11… [cited by applicant]
EP Response With Mail Date of Nov. 3, 2016 for EP Application No. 14195760.5 in Response to EP Communication Dated Jul. 28, 2016. 17 Pages. [cited by applicant]
Exhibit 10—U.S. Appl. No. 60/061,770, filed Oct. 10, 1997 to Barth et al., related to U.S. Pat. No. 7,330,953. 76 pages. [cited by applicant]
Farrell, Todd, “Core Architecture Doubles MEM Data Rate,” in Electronic Engineering Times Asia, Dec. 16, 2005. 4 pages. [cited by applicant]
Gervasi, Bill, “DRAM Module Market Overview,” SimpleTech, JEDEX Shanghai, Oct. 25-26, 2005. 50 pages. [cited by applicant]
Hynix Semiconductor, “JEDEX Shanghai 2005,” Oct. 2005. 24 pages. [cited by applicant]
Invitation to Pay Additional Fees and Communication Relating to the Results of the Partial International Search dated Jan. 16, 2008 in International Application No. PCT/US2007/069471. 8 pages. [cited by applicant]
Janzen, Jeff, “DDR2 Offers New Features and Functionality,” Designline, vol. 12, Issue 2, Micron, Jul. 31, 2003, EN.L. 16 pages. [cited by applicant]
JEDEC Standard, “DDR2 SDRAM Specification,” JESD-2B, Revision of JESD79-2A, JEDEC Solid State Technology Association, Jan. 2005. 112 pages. [cited by applicant]
Johnson, Chris, “Graphics DDR3 On-Die Termination and Thermal Considerations,” Micron Designline, vol. 12, Issue 1, Rev. Apr. 1, 2003, 1Q03/2Q03. 8 pages. [cited by applicant]
Johnson, Chris, “The Future of Memory: Graphics DDR3 SDRAM Functionality,” Micron Designline, vol. 11, Issue 4, 4Q02, Oct. 2002. 8 pages. [cited by applicant]
JP Office Action dated Jan. 18, 2012 in JP Application No. 2009-513379, Includes English Translation. 9 pages. [cited by applicant]
JP Office Action dated May 17, 2012 re JP Application No. 2009-513379, Includes English Translation. 5 pages. [cited by applicant]
JP Request dated Apr. 9, 2009 for Examination and a Voluntary Amendment re JP Application No. 2009-513379. 17 pages. [cited by applicant]
JP Response Argument and Amendment dated Apr. 16, 2012 in JP Application No. 2009-513379, Includes English Translation. 46 pages. [cited by applicant]
JP Response dated Aug. 15, 2012 re JP Application No. 2009-513379. 19 pages. [cited by applicant]
Kyungki-Do et al., “GDDR2 ODT On/Off Control Method (Single Rank/Dual Rank),” Samsung Electronics Co., Ltd., Application Note, Product Planning & Application Engineering Team, Jul. 2003. 12 pages. [cited by applicant]
Lee, K.H., “MultiMediaCard Solutions of Digital Storage Applications,” Samsung Electronics, JEDEX Shanghai, Oct. 26, 2005. 28 pages. [cited by applicant]
Micron Technical Note, “DDR2-533 Memory Design Guide for Two-DIMM Unbuffered Systems,” TN-47-01, 2003. 19 pages. [cited by applicant]
Micron Technical Note, “TN-47-07: DDR2 Simulation Support,” Rev. A 7/05, 2003. 4 pages. [cited by applicant]
Nanya Technology Corporation, “512Mb DDR2 SDRAM,” Preliminary Specification, Dec. 18, 2003, Rev. 0.2. 80 pages. [cited by applicant]
PCT International Preliminary Report on Patentability dated Jul. 23, 2008 in International Application No. PCT/US2007/069471. 9 pages. [cited by applicant]
PCT International Search Report and Written Opinion dated Apr. 7, 2008 in International Application No. PCT/US2007/069471. 18 pages. [cited by applicant]
Response dated Nov. 17, 2010 to Notice of Non-Compliant Information Disclosure Statement re U.S. Appl. No. 12/861,771. 1 Page. [cited by applicant]
Rhoden et al., “DDR/DDR2/DDR3 SDRAM Tutorial,” Oct. 25-26, 2005, Slide Presentation. 118 pages. [cited by applicant]
Rhoden, Desi, “VTF 2005: The Evolution of DDR,” Via Technology Forum 2005, Inphi Corporation, JEDEC 42 Memory Committee. 23 pages. [cited by applicant]
Samsung Electronics, “512Mb E-die DDR3 SDRAM Specification,” Preliminary 512Mb DDR3 SDRAM, Rev. 0.5, Dec. 2006, K4B510846E. 55 pages. [cited by applicant]
Samsung Electronics, “DDR2 ODT Control,” Product Planning & Application Engineering Team, Dec. 2004. 8 pages. [cited by applicant]
Shen, Dr. William Wu, “DDR3 Functional Outlook,” Infineon, JEDEX Shanghai, Oct. 25-26, 2005, JEDEC 42.3B Letter Committee, Functional and Features. 30 pages. [cited by applicant]
Shen, Dr. William Wu, “DDR3 Functional Outlook,” JEDEX San Jose, Apr. 2006, JEDEC 42.3B Letter Committee, Functional and Features. 31 pages. [cited by applicant]
Shen, Dr. William Wu, “System Challenges on DDR3 High Speed Clock/Address/Command Fly-by Bus Topology,” JEDEX San Jose, Apr. 18, 2006. 47 pages. [cited by applicant]
Trost, Dr. Hans-Peter, “Press Presentation DDR3 Introduction,” Memory Products Group, Infineon Technologies, AG, Jun. 2005. 11 pages. [cited by applicant]
Weidlich, Rainer, “What Comes Next in Commodity DRAMS—DDR3,” Infineon Technologies, Jun. 2005. 4 pages. [cited by applicant]
EP Response as Filed Sep. 23, 2024 in Response to the Official Communication Pursuant to Article 94(3) EPC dated Jul. 5, 2024 re: EP Appln. No. 23175747.7. 19 pages. [cited by applicant]