Granted Patent B2

US 12,484,361 · App. 17/815,866 · Granted Nov 25, 2025

Inventors: Martin Behringer (Regensburg, DE); Andreas Biebersdorf (Regensburg, DE); Ruth Boss (Neutraubling, DE); Erwin Lang (Regensburg, DE); Tobias Meyer (Kelheim, DE); Alexander Pfeuffer (Regensburg, DE); Marc Philippens (Regensburg, DE); Julia Stolz (Regensburg, DE); Tansen Varghese (Regensburg, DE); Sebastian Wittmann (Regensburg, DE); Siegfried Herrmann (Regenstauf, DE); Berthold Hahn (Hemau—Hohenschambach, DE); Bruno Jentzsch (Regensburg, DE); Korbinian Perzlmaier (Regensburg, DE); Peter Stauss (Regensburg, DE); Petrus Sundgren (Lappersdorf, DE); Jens Mueller (Regenstauf, DE); Kerstin Neveling (Regensburg, DE); Frank Singer (Pentling, DE); Christian Mueller (Deuerling, DE)

Assignee: OSRAM Opto Semiconductors GmbH

H10H29/142H10H20/814H10H20/819H10H20/855

Abstract

Claims (11)

1 . A μ-LED comprising:

a functional layer stack having an active layer having a first main surface side facing away from a growth substrate and a second main surface side facing the growth substrate;

a first electrically conductive contact layer arranged on the first main surface side;

a second electrically conductive contact layer applied to the second main surface side; and

a holding structure anchored on or partially in the growth substrate and supporting the functional layer stack with the first electrically conductive contact layer and the second electrically conductive contact layer, wherein the holding structure extends from the growth substrate along a side portion of the functional layer stack to a side portion of the first electrically conductive contact layer, wherein the holding structure is configured to be breakable for separating the μ-LED from the holding structure during a lift-off procedure,

wherein the active layer has an increased band gap in edge regions of the μ-LED or in regions which are at least adjacent to the holding structure or adjacent to a break-off edge.

2 . The μ-LED according to claim 1 , further comprising quantum well intermixing in edge regions of the active layer or in regions of the active layer adjacent to the holding structure or adjacent to a break-off edge.

3 . The μ-LED according to claim 1 , wherein the holding structure comprises InGaAlP or AlGaAs or BCB or an oxide or a nitride or a combination of such materials and is electrically non-conductive.

4 . The μ-LED according to claim 1 , wherein the holding structure further comprises a layer of InGaAlP or a layer of AlGaAs, wherein the layer of InGaAlP or the layer of AlGaAs is attached to the functional layer stack on the first main surface side.

5 . The μ-LED according to claim 1 , wherein the holding structure further comprises a layer of InGaAlP or a layer of AlGaAs, and wherein the layer of InGaAlP or the layer of AlGaAs is attached to the functional layer stack on the second main surface side and comprises InGaAlP or AlGaAs.

6 . The μ-LED according to claim 1 , wherein the first electrically conductive contact layer or the second electrically conductive contact layer comprises ITO or ZnO or a metal.

Assignments (1)

Priority Claims (10)

Continuity (3)

References Cited (400)