Semiconductor devices and methods of manufacturing semiconductor devices
In one example, a semiconductor device comprises a cavity substrate comprising a base and a sidewall to define a cavity, an electronic component on a top side of the base in the cavity, a lid over the cavity and over the sidewall, and a valve to provide access to the cavity, wherein the valve has a plug to provide a seal between a cavity environment and an exterior environment outside the cavity. Other examples and related methods are also disclosed herein.
1. A semiconductor device, comprising:
a cavity substrate comprising a base and a sidewall to define a cavity;
an electronic component on a top side of the base in the cavity;
a lid over the cavity and over the sidewall; and
a valve to provide access to the cavity, wherein the valve has a plug to provide a seal between a cavity environment and an exterior environment outside the cavity;
wherein the valve comprises a through-hole in the lid between the lid and the sidewall of the cavity substrate.
2. The semiconductor device of claim 1 , further comprising a seal base in the sidewall and a seal between the seal base and the lid.
3. The semiconductor device of claim 1 , wherein the cavity environment comprises a vacuum.
4. The semiconductor device of claim 1 , wherein the plug is between the sidewall and the lid.
5. The semiconductor device of claim 1 , wherein the valve is between the sidewall of the cavity substrate and a top side of the lid.
6. The semiconductor device of claim 1 , wherein the plug is exposed at a lateral side of the sidewall.
7. The semiconductor device of claim 1 , wherein the plug comprises a resin.
8. The semiconductor device of claim 1 , wherein the valve comprises a valve base on an inner wall of the lid at the through-hole.
9. The semiconductor device of claim 1 , further comprising a conductive structure in the base electrically coupled with the electronic component.
10. A semiconductor device, comprising:
a substrate comprising a base and a sidewall extending vertically from the base;
a lid over the sidewall to define a cavity between the base, the sidewall, and the lid;
an electronic component in the cavity;
a valve between the cavity and an exterior environment outside the cavity;
a seal between the lid and the sidewall; and
a plug in the valve;
wherein the seal and the plug hermetically seal the cavity from the exterior environment; and
wherein the valve comprises a through-hole in the lid between the lid and the sidewall of the substrate.
11. The semiconductor device of claim 10 , wherein:
wherein the plug is in the through-hole.
12. The semiconductor device of claim 10 , wherein:
wherein the plug is between the lid and the sidewall of the substrate.
13. The semiconductor device of claim 10 , comprising:
a seal base in the sidewall and a seal between the seal base and the lid.
14. The semiconductor device of claim 10 , comprising:
a seal base in the sidewall and contacting the plug.
15. The semiconductor device of claim 10 , wherein:
the valve is between a top side of the lid and a bottom side the lid.
16. A method to manufacture a semiconductor device, comprising:
providing a cavity substrate comprising a base and a sidewall to define a cavity;
providing an electronic component on a top side of the base in the cavity;
providing a lid over the cavity and over the sidewall, wherein:
the lid comprises a valve to provide access to the cavity; and
the valve comprises a through-hole in the lid between the lid and the sidewall of the cavity substrate; and
providing a plug in the valve to provide a seal between a cavity environment and an exterior environment outside the cavity.
17. The method of claim 16 , comprising:
providing a seal between the sidewall and the lid.
18. The method of claim 16 , comprising:
sealing the plug in the valve using a laser.