Semiconductor device
A semiconductor device includes a capacitor structure. The capacitor structure includes a bottom electrode, a dielectric layer, and a top electrode that are sequentially stacked in a first direction. The dielectric layer includes first dielectric layers and second dielectric layers interposed between the bottom electrode and the top electrode and are that are alternately stacked in the first direction. The first dielectric layers include a ferroelectric material, and the second dielectric layers include an anti-ferroelectric material. A lowermost second dielectric layer is interposed between a lowermost first dielectric layer and the bottom electrode, and an uppermost second dielectric layer is interposed between an uppermost first dielectric layer and the top electrode.
1 . A semiconductor device, comprising:
a capacitor structure,
wherein the capacitor structure comprises a bottom electrode, a dielectric layer, and a top electrode that are sequentially stacked in a first direction,
wherein the dielectric layer comprises a plurality of first dielectric layers and a plurality of second dielectric layers interposed between the bottom electrode and the top electrode, which are alternately stacked in the first direction,
wherein the plurality of first dielectric layers comprise a ferroelectric material,
wherein the plurality of second dielectric layers comprise an anti-ferroelectric material,
wherein a lowermost second dielectric layer is interposed between a lowermost first dielectric layer and the bottom electrode,
wherein an uppermost second dielectric layer is interposed between an uppermost first dielectric layer and the top electrode, and
wherein a thickness of each of the plurality of first dielectric layers differs from a thickness of each of the plurality of second dielectric layers.
2 . The semiconductor device of claim 1 , wherein a total thickness in the first direction of the dielectric layer is less than or equal to 60 Å.
3 . The semiconductor device of claim 1 , wherein thicknesses in the first direction of the plurality of first dielectric layers are different from each other.
4 . The semiconductor device of claim 1 , wherein a thickness in the first direction of each of the plurality of first dielectric layers is less than or equal to 10 Å.
5 . The semiconductor device of claim 1 , wherein a sum of thicknesses in the first direction of the plurality of first dielectric layers is less than or equal to 30% of a total thickness in the first direction of the dielectric layer.
6 . The semiconductor device of claim 1 , wherein a thickness in the first direction of at least one of the plurality of second dielectric layers is less than or equal to 10 Å.
7 . The semiconductor device of claim 1 , wherein a number of layers of the plurality of second dielectric layers is less than a number of layers of the plurality of first dielectric layers.
8 . The semiconductor device of claim 1 , wherein
the lowermost second dielectric layer is in contact with the bottom electrode, and
the uppermost second dielectric layer is in contact with the top electrode.
9 . The semiconductor device of claim 1 , further comprising an impurity provided in at least one of the plurality of second dielectric layers.
10 . The semiconductor device of claim 9 , wherein the impurity comprises a material that has a band gap that is less than or equal to 5 eV.
11 . A semiconductor device, comprising:
a capacitor structure,
wherein the capacitor structure comprises a bottom electrode, a dielectric layer, and a top electrode that are alternately stacked in a first direction,
wherein the dielectric layer comprises a plurality of first dielectric layers and a plurality of second dielectric layers interposed between the bottom electrode and the top electrode, which are alternately stacked in the first direction,
wherein the plurality of first dielectric layers comprise a ferroelectric material,
wherein the plurality of second dielectric layers comprise an anti-ferroelectric material,
wherein a lowermost second dielectric layer is in contact with the bottom electrode,
wherein an uppermost second dielectric layer is in contact with the top electrode,
wherein the plurality of first dielectric layers are interposed between the uppermost and the lowermost second dielectric layers, and
wherein a thickness of each of the plurality of first dielectric layers differs from a thickness of each of the plurality of second dielectric layers.
12 . The semiconductor device of claim 11 , wherein a total thickness in the first direction of the dielectric layer is less than or equal to 60 Å.
13 . The semiconductor device of claim 11 , wherein a thickness in the first direction of each of the plurality of first dielectric layers is less than or equal to 10 Å.
14 . The semiconductor device of claim 11 , wherein a sum of thicknesses in the first direction of the plurality of first dielectric layers is less than or equal to 30% of a total thickness in the first direction of the dielectric layer.
15 . The semiconductor device of claim 11 , further comprising an impurity provided in at least one of the plurality of second dielectric layers.
16 . A semiconductor device, comprising:
a substrate;
bottom electrodes disposed on the substrate and that are horizontally spaced apart from each other;
a top electrode that covers the bottom electrodes; and
a dielectric layer interposed between each of the bottom electrodes and the top electrode,
wherein the dielectric layer comprises a plurality of first dielectric layers and a plurality of second dielectric layers, which are alternately stacked in a direction perpendicular to an interface between each of the bottom electrodes and the top electrode,
wherein the plurality of first dielectric layers comprise a ferroelectric material,
wherein the plurality of second dielectric layers comprise an anti-ferroelectric material,
wherein a lowermost second dielectric layer is interposed between a lowermost first dielectric layer and each of the bottom electrodes,
wherein an uppermost second dielectric layer is interposed between an uppermost first dielectric layer and the top electrode, and
wherein a thickness of each of the plurality of first dielectric layers differs from a thickness of each of the plurality of second dielectric layers.
17 . The semiconductor device of claim 16 , wherein
the lowermost second dielectric layer is in contact with each of the bottom electrodes, and
the uppermost second dielectric layer is in contact with the top electrode.
18 . The semiconductor device of claim 16 , further comprising a supporting pattern interposed between the bottom electrodes,
wherein the plurality of first dielectric layers and the plurality of second dielectric layers extend into regions between the supporting pattern and the top electrode, and
the plurality of first dielectric layers and the plurality of second dielectric layers located between the supporting pattern and the top electrode are alternately stacked in a direction perpendicular to an interface between the supporting pattern and the top electrode.
19 . The semiconductor device of claim 18 , wherein a lowermost second dielectric layer extends into a region between the supporting pattern and the top electrode and is in contact with the supporting pattern.
20 . The semiconductor device of claim 18 , wherein a number of layers of the plurality of first dielectric layers interposed between each of the bottom electrodes and the top electrode is equal to a number of layers of the plurality of first dielectric layers interposed between the supporting pattern and the top electrode, and
a number of layers of the plurality of second dielectric layers interposed between each of the bottom electrodes and the top electrode is equal to a number of layers of the plurality of second dielectric layers interposed between the supporting pattern and the top electrode.