IP Library Granted Patent US 12,698,962
Granted Patent B2
US 12,698,962 · App. 18/144,540 · Granted Aug 4, 2026

Metrology target for one-dimensional measurement of periodic misregistration

Inventors: Yoel Feler (Haifa, IL); Mark Ghinovker (Yoqneam Ilit, IL)
Assignee: KLA Corporation
G01B11/272G06T7/0004G06T2207/30148
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,698,962
App. No.
18/144,540
Granted
Aug 4, 2026
Kind
B2
Abstract

A metrology target includes a first target structure set having one or more first target structures formed within at least one of a first working zone or a second working zone of a sample. The metrology target includes a second target structure set having one or more second target structures formed within at least one of the first working zone or the second working zone. The first working zone may include a center of symmetry that overlaps with a center of symmetry of the second working zone when an overlay error of one or more layers of the sample is not present. The metrology target may additionally include a third target structure set, a fourth target structure set, or a fifth target structure set.

Claims (29)

1 . A system comprising:

a controller communicatively couplable a metrology sub-system, wherein the controller includes one or more processors, wherein the one or more processors are configured to execute a set of program instructions maintained in memory, wherein the set of program instructions is configured to cause the one or more processors to:

receive, from the metrology sub-system, one or more images of a metrology target on a sample, wherein the metrology target comprises:

two or more sets of working zones, wherein each of the sets of working zones includes features having periodicity along one or more directions, wherein each of the sets of working zones is at least two-fold rotationally symmetric about a respective center of rotational symmetry, wherein the centers of rotational symmetry of the two or more sets of working zones are designed to overlap at a common point, wherein one of the two or more sets of working zones is a single central working zone centered on and including the common point and is at least two-fold rotationally symmetric with itself, wherein at least the single central working zone includes features in two or more sample layers, the features comprising a two-dimensional periodic structure having periodicity along two directions and configured for measurement of overlay error along a first measurement direction and a second measurement direction; and

determine overlay error between two or more layers of the sample including the features of the two or more working zones based on differences between the centers of rotational symmetry of any of the two or more sets of working zones.

2 . The system of claim 1 , wherein at least some of the features of the two or more sets of working zones are disposed on a first layer of the sample, wherein at least some of the features of the two or more sets of working zones are disposed on a second layer of the sample.

3 . The system of claim 1 , wherein the features of at least one of two or more sets of working zones are located in a different layer of a sample including the metrology target than the features of at least one other of the two or more sets of working zones.

4 . The system of claim 1 , wherein the features of the two or more sets of working zones are disposed on common layers of the sample.

5 . The system of claim 1 , wherein the metrology sub-system comprises:

an advanced imaging metrology (AIM) tool, wherein the two or more sets of working zones provide an AIM target.

6 . The system of claim 1 , wherein the metrology sub-system comprises:

a robust advanced imaging metrology (rAIM) tool, wherein the two or more sets of working zones provide an rAIM target.

7 . The system of claim 1 , wherein the working zones of all of the two or more sets of working zones have at least one of a common size or a common shape.

8 . The system of claim 1 , wherein the working zones of at least one of the two or more sets of working zones have at least one of a different size or shape than the working zones of at least one other of the two or more sets of working zones.

9 . The system of claim 1 , wherein the differences between the centers of rotational symmetry of any of the two or more sets of working zones are indicative of overlay error between one or more layers of the sample including the features of the two or more working zones along the two directions.

10 . A metrology target comprising:

two or more sets of working zones, wherein each of the sets of working zones includes features having periodicity along one or more directions, wherein each of the sets of working zones is at least two-fold rotationally symmetric about a respective center of rotational symmetry, wherein the centers of rotational symmetry of the two or more sets of working zones are designed to overlap at a common point, wherein one of the two or more sets of working zones is a single central working zone centered on and including the common point and is at least two-fold rotationally symmetric with itself, wherein at least the single central working zone includes features in two or more sample layers, the features comprising a two-dimensional periodic structure having periodicity along two directions and configured for measurement of overlay error along a first measurement direction and a second measurement direction; wherein differences between the centers of rotational symmetry of any of the two or more sets of working zones are indicative of overlay error between two or more layers of the sample including the features of the two or more working zones.

11 . The metrology target of claim 10 , wherein the working zones of all of the two or more sets of working zones have at least one of a common size or a common shape.

12 . The metrology target of claim 10 , wherein the working zones of at least one of the two or more sets of working zones have at least one of a different size or shape than the working zones of at least one other of the two or more sets of working zones.

13 . The metrology target of claim 10 , wherein the features of at least one of two or more sets of working zones are located in a different layer of a sample than the features of at least one other of the two or more sets of working zones.

14 . The metrology target of claim 10 , wherein the two or more sets of working zones provide an advanced imaging metrology (AIM) target compatible with a selected AIM tool.

15 . The metrology target of claim 10 , wherein the two or more sets of working zones provide a robust advanced imaging metrology (AIM) target compatible with a selected rAIM tool.

16 . The metrology target of claim 10 , wherein the differences between the centers of rotational symmetry of any of the two or more sets of working zones are indicative of overlay error between one or more layers of the sample including the features of the two or more working zones along the two directions.

17 . A metrology method comprising:

generating one or more images of a metrology target on a sample, wherein the metrology target comprises:

two or more sets of working zones, wherein each of the sets of working zones includes features having periodicity along one or more directions, wherein each of the sets of working zones is at least two-fold rotationally symmetric about a respective center of rotational symmetry, wherein the centers of rotational symmetry of the two or more sets of working zones are designed to overlap at a common point, wherein one of the two or more sets of working zones is a single central working zone centered on and including the common point and is at least two-fold rotationally symmetric with itself, wherein at least the single central working zone includes features in two or more sample layers, the features comprising a two-dimensional periodic structure having periodicity along two directions and configured for measurement of overlay error along a first measurement direction and a second measurement direction; and

determining overlay error between two or more layers of the sample including the features of the two or more working zones based on differences between the centers of rotational symmetry of any of the two or more sets of working zones.

18 . The method of claim 17 , wherein at least some of the features of the two or more sets of working zones are disposed on a first layer of the sample, wherein at least some of the features of the two or more sets of working zones are disposed on a second layer of the sample.

19 . The method of claim 17 , wherein the features of at least one of two or more sets of working zones are located in a different layer of a sample including the metrology target than the features of at least one other of the two or more sets of working zones.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2023
From: FELER, YOEL; GHINOVKER, MARK
To: KLA CORPORATION
Reel/Frame 063567/0353 →
Continuity (3)
Continuation 17098835 · Nov 16, 2020
Provisional Application 63034414 · Jun 4, 2020
Related Publication 20240035812A1 · Feb 1, 2024
References Cited (117)
US 4947413A · Jewell et al. · 1990 [cited by applicant]
US 5216257A · Brueck et al. · 1993 [cited by applicant]
US 5414514A · Smith et al. · 1995 [cited by applicant]
US 5808731A · Kirk · 1998 [cited by applicant]
US 5895735A · Yoon · 1999 [cited by applicant]
US 5914204A · Lee · 1999 [cited by applicant]
US 6958819B1 · Heaton et al. · 2005 [cited by applicant]
US 7068833B1 · Ghinovker et al. · 2006 [cited by applicant]
US 7247843B1 · Moon · 2007 [cited by applicant]
US 7440105B2 · Adel et al. · 2008 [cited by applicant]
US 7541201B2 · Ghinovker · 2009 [cited by applicant]
US 7557921B1 · Adel et al. · 2009 [cited by applicant]
US 7602491B2 · Kandel et al. · 2009 [cited by applicant]
US 7608468B1 · Ghinovker et al. · 2009 [cited by applicant]
US 7879627B2 · Ghinovker et al. · 2011 [cited by applicant]
US 8330281B2 · Ghinovker et al. · 2012 [cited by applicant]
US 9123649B1 · Manassen et al. · 2015 [cited by applicant]
US 9214317B2 · Shur · 2015 [cited by applicant]
US 9476698B2 · Abdulhalim et al. · 2016 [cited by applicant]
US 9702693B2 · Ghinovker et al. · 2017 [cited by applicant]
US 9864209B2 · Levinski et al. · 2018 [cited by applicant]
US 10190979B2 · Manassen et al. · 2019 [cited by applicant]
US 10197389B2 · Levinski et al. · 2019 [cited by applicant]
US 10488768B2 · Auer et al. · 2019 [cited by applicant]
US 10527951B2 · Yohanan et al. · 2020 [cited by applicant]
US 10585357B2 · Schaar et al. · 2020 [cited by applicant]
US 10726169B2 · Adel et al. · 2020 [cited by applicant]
US 10824079B2 · Lubashevsky et al. · 2020 [cited by applicant]
US 11073768B2 · Hill et al. · 2021 [cited by applicant]
US 11164307B1 · Feler et al. · 2021 [cited by applicant]
US 11300524B1 · Hill et al. · 2022 [cited by applicant]
US 11378394B1 · Paskover et al. · 2022 [cited by applicant]
US 11409205B2 · Gdor et al. · 2022 [cited by applicant]
US 11428642B2 · Hill et al. · 2022 [cited by applicant]
US 11796925B2 · Lubashevsky et al. · 2023 [cited by applicant]
US 20010021477A1 · Dirksen et al. · 2001 [cited by applicant]
US 20020080364A1 · Monshouwer et al. · 2002 [cited by applicant]
US 20030021465A1 · Adel et al. · 2003 [cited by applicant]
US 20040169861A1 · Mieher et al. · 2004 [cited by applicant]
US 20050195398A1 · Adel et al. · 2005 [cited by applicant]
US 20060238761A1 · Lin et al. · 2006 [cited by applicant]
US 20070076205A1 · Schulz · 2007 [cited by applicant]
US 20070077503A1 · Yoo · 2007 [cited by applicant]
US 20070234786A1 · Moon · 2007 [cited by applicant]
US 20070242272A1 · Suehira et al. · 2007 [cited by applicant]
US 20070279630A1 · Kandel et al. · 2007 [cited by applicant]
US 20080023855A1 · Ghinovker · 2008 [cited by examiner]
US 20090042108A1 · Yasuzato · 2009 [cited by applicant]
US 20100267682A1 · Johri et al. · 2010 [cited by applicant]
US 20110058170A1 · Ausschnitt et al. · 2011 [cited by applicant]
US 20110122496A1 · Schaar et al. · 2011 [cited by applicant]
US 20120253325A1 · Sniffin et al. · 2012 [cited by applicant]
US 20130035888A1 · Kandel et al. · 2013 [cited by applicant]
US 20130193602A1 · Suzuki et al. · 2013 [cited by applicant]
US 20130252429A1 · Okamoto et al. · 2013 [cited by applicant]
US 20140065736A1 · Amir et al. · 2014 [cited by applicant]
US 20140199791A1 · Park et al. · 2014 [cited by applicant]
US 20140240704A1 · Komine et al. · 2014 [cited by applicant]
US 20140351771A1 · Amir · 2014 [cited by applicant]
US 20150235880A1 · Inada et al. · 2015 [cited by applicant]
US 20160300767A1 · Ko et al. · 2016 [cited by applicant]
US 20170146338A1 · Allen · 2017 [cited by applicant]
US 20170307367A1 · Yaegashi et al. · 2017 [cited by applicant]
US 20180024054A1 · Moon et al. · 2018 [cited by applicant]
US 20180246420A1 · Pandey et al. · 2018 [cited by applicant]
US 20180275530A1 · Kandel · 2018 [cited by examiner]
US 20190033726A1 · Adam et al. · 2019 [cited by applicant]
US 20190049373A1 · Levinski · 2019 [cited by applicant]
US 20190250504A1 · Feler et al. · 2019 [cited by applicant]
US 20190279841A1 · Xiao · 2019 [cited by applicant]
US 20190285996A1 · Shibayama et al. · 2019 [cited by applicant]
US 20210072650A1 · Feler et al. · 2021 [cited by applicant]
US 20210364279A1 · Manassen et al. · 2021 [cited by applicant]
US 20210364935A1 · Gdor et al. · 2021 [cited by applicant]
US 20220034652A1 · Manassen et al. · 2022 [cited by applicant]
US 20230314319A1 · Manassen et al. · 2023 [cited by applicant]
CN 105702662A · 2016 [cited by applicant]
JP 214765Y1 · 1998 [cited by applicant]
JP 2001093820A · 2001 [cited by applicant]
JP 2002134394A · 2002 [cited by applicant]
JP 2004508711A · 2004 [cited by applicant]
JP 2007140460 · 2009 [cited by applicant]
JP 2010267682A · 2010 [cited by applicant]
JP 2011243664A · 2011 [cited by applicant]
JP 2012253325A · 2012 [cited by applicant]
JP 2013074258A · 2013 [cited by applicant]
JP 2013254780 · 2015 [cited by applicant]
JP 2015154008A · 2015 [cited by applicant]
KR 1020200004381A · 2020 [cited by applicant]
TW 202014672A · 2020 [cited by applicant]
WO 2013096656A1 · 2013 [cited by applicant]
WO 2015193904A1 · 2015 [cited by applicant]
WO 2018004511A1 · 2018 [cited by applicant]
European Patent Office, Extended European Search Report received in EP Application No. 21818825.8, Jul. 16, 2024, 9 pages. [cited by applicant]
U.S. Appl. No. 17/119,536, filed Dec. 11, 2020, Paskover et al. [cited by applicant]
U.S. Appl. No. 17/140,999, filed Jan. 4, 2021, Hill et al. [cited by applicant]
U.S. Appl. No. 17/142,783, filed Jan. 6, 2021, Hill et al. [cited by applicant]
U.S. Appl. No. 17/708,958, filed Mar. 20, 2022, manassen et al. [cited by applicant]
U.S. Appl. No. 17/709,104, filed Mar. 30, 2022, Lubashevksy et al. [cited by applicant]
Adel, Mike et al., “Diffraction order control in overlay metrology: a review of the roadmap options,” Proc. SPIE. 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 692202 (2008). [cited by applicant]
Buttgereit, et al., “Phame(R)—high resolution off-axis phase shift measurements on 45nm node features,” 24th European Mask and Lithography Conference, 2008, pp. 1-7, doi: 10.1117/12.798805. [cited by applicant]
Di, et al., “Moire-Based Absolute Interferometry With Large Measurement Range in Wafer-Mask Alignment”, IEEE Photonics Technology Letters, vol. 27, No. 4, pp. 435-438, 2015. doi: 10.1109/LPT.2014.2377037. [cited by applicant]
Fesperman Jr., Ronnie Rex, (2006). Multiscale Alignment and Positioning System. (UMI 3264369) [Doctor of Philosophy, University of North Carolina] ProQuest Information and Learning Company. [cited by applicant]
Kikuchi et al., “Principle and observation of fluorescence moire fringes for alignment in print and imprint methods” J. Vac. Sci. Technol. B 35, 06G303 (2017); https://doi.org/10.1116/1.4990844, Submitted: Jun. 19, 2017… [cited by applicant]
Moon, et al., “Immunity to Signal Degradation by Overlayers Using a Novel Spatial-Phase-Matching Alignment System”, J. Vac. Sci. Technol. B 13, 2648-2652 (1995). [cited by applicant]
PCT International Search Report and Written Opinion for International Application No. PCT/US2021/034658 dated Sep. 14, 2021, 8 pages. [cited by applicant]
Servin, et al., “Mask contribution on CD & OVL errors budgets for Double Patterning Lithography,” 25th European Mask and Lithography Conference, 2009, pp. 1-13. [cited by applicant]
Wu, et al., (2012). Nanoimprint lithography with ≤60 nm overlay precision. Applied Physics A, 106, 767-772. [cited by applicant]
Zhou, et al., (2015). Moiré-Based Interferometry for Magnification Calibration of Bitelecentric Lens System. IEEE Photonics Journal. 7. 1-11. 10.1109/JPHOT.2015.2500892. [cited by applicant]
Zhou, et al., “Fourier-based analysis of moire fringe patterns of superposed gratings in alignment of nanolithography”, Optics Express, vol. 16, No. 11, p. 7869, 2008. doi: 10.1364/OE.16.007869. [cited by applicant]
Zhu et al. Four-quadrant gratings moire fringe alignment measurement in proximity lithography. Optics Express. Feb. 2013;21(3):3463-3473. DOI: 10.1364/OE.21.003463. PMID: 23481804. [cited by applicant]
Zhu, et al., (2015). Adjustment Strategy for Inclination Moiré Fringes in Lithography by Spatial Frequency Decomposition. IEEE Photonics Technology Letters. 27. 395-398. 10.1109/LPT.2014.2370072. [cited by applicant]
Taiwan Patent Office, Office Action received in TW Application No. 110113174, Jun. 17, 2025, 10 pages (including translation). [cited by applicant]
Japanese Patent Office, Office Action received in JP Application No. 2022-574428, Apr. 22, 2025, 14 pages (including translation). [cited by applicant]
Taiwan Patent Office, Official Translation of Office Action received in TW Application No. 110113174, Jun. 17, 2025, 3 pages. [cited by applicant]
Chinese Patent Office, Office Action received in CN Application No. 202180039748.0, Nov. 27, 2025, 8 pages (including translation. [cited by applicant]
Korean Patent Office, Office Action received in KR Application No. 10-2022-7045136, Aug. 6, 2025, 8 pages (including translation). [cited by applicant]