Systems and methods for spacer for power module for inverter for electric vehicle
A system includes: an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: a power module for an inverter for an electric vehicle, the power module comprising: a first substrate having an outer layer and an inner layer; a first electrically conductive spacer coupled to the inner layer of the first substrate; a first semiconductor die coupled to the first electrically conductive spacer; and a second substrate having an outer layer and an inner layer, the first semiconductor die coupled to the inner layer of the second substrate.
1 . A system comprising:
an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes:
a power module comprising:
a first substrate having an outer layer and an inner layer;
a first electrically conductive spacer coupled to the inner layer of the first substrate;
a first semiconductor die coupled to the first electrically conductive spacer;
a second substrate having an outer layer and an inner layer, the first semiconductor die coupled to the inner layer of the second substrate;
a second electrically conductive spacer coupled to the inner layer of the second substrate; and
a second semiconductor die coupled to the second electrically conductive spacer and the inner layer of the first substrate.
2 . The system of claim 1 , further comprising:
the battery configured to supply the DC power to the inverter; and
the motor configured to receive the AC power from the inverter to drive the motor.
3 . A power module, the power module comprising:
a first substrate having an outer layer and an inner layer;
a first electrically conductive spacer coupled to the inner layer of the first substrate;
a first semiconductor die coupled to the first electrically conductive spacer, wherein the first semiconductor die includes a source connection, and the source connection is coupled to the first electrically conductive spacer; and
a second substrate having an outer layer and an inner layer, the first semiconductor die coupled to the inner layer of the second substrate.
4 . The power module of claim 3 , wherein:
the first substrate further includes a middle layer between the inner layer and the outer layer,
the middle layer includes a ceramic, and
the outer layer and the inner layer of the first substrate include a metal.
5 . The power module of claim 3 , further comprising:
a lead frame connector coupled to the inner layer of the first substrate.
6 . The power module of claim 3 , wherein the first semiconductor die has a same surface area as the first electrically conductive spacer.
7 . The power module of claim 3 , further comprising:
a second electrically conductive spacer coupled to the inner layer of the second substrate; and
a second semiconductor die coupled to the second electrically conductive spacer and the inner layer of the first substrate.
8 . The power module of claim 7 , wherein the first electrically conductive spacer is coupled to a first region of the inner layer of the first substrate, and the second semiconductor die is coupled to a second region of the inner layer of the first substrate, wherein the first region is electrically separated from the second region.
9 . The power module of claim 3 , wherein:
the second substrate further includes a middle layer between the inner layer and the outer layer,
the middle layer includes a ceramic, and
the outer layer and the inner layer of the second substrate include a metal.
10 . The power module of claim 9 , wherein the ceramic includes silicon nitride.
11 . The power module of claim 3 , wherein:
the first semiconductor die includes a drain connection, and
the drain connection is coupled to the inner layer of the second substrate.
12 . The power module of claim 3 , wherein the power module does not include a wire bond, ribbon, or clip.
13 . The power module of claim 3 , wherein:
the first electrically conductive spacer is directly coupled to the inner layer of the first substrate, and
the first semiconductor die is directly coupled to the first electrically conductive spacer and directly coupled to the inner layer of the second substrate.
14 . An inverter comprising the power module of claim 3 .
15 . A vehicle comprising the inverter of claim 14 .
16 . A power module, comprising:
a first substrate;
a second substrate;
a semiconductor die disposed between the first substrate and the second substrate; and
one or more electrically conductive spacers disposed between the semiconductor die and one or more of the first substrate and the second substrate,
wherein the semiconductor die has a same surface area as a first electrically conductive spacer among the one or more electrically conductive spacers.
17 . The power module of claim 16 , wherein the first electrically conductive spacer is disposed between the semiconductor die and the first substrate.
18 . The power module of claim 17 , wherein the one or more electrically conductive spacers includes a second electrically conductive spacer disposed between the semiconductor die and the second substrate.
19 . The power module of claim 16 , wherein the one or more electrically conductive spacers is configured to complete a current path in the power module between the semiconductor die and one or more of the first substrate and the second substrate and provide a distance between the semiconductor die and one or more of the first substrate and the second substrate to meet a dielectric requirement of the power module.