Granted Patent B2

US 12,368,391 · App. 18/175,270 · Granted Jul 22, 2025

Inventors: David Paul Buehler (Noblesville, IN); Kevin M. Gertiser (Carmel, IN); David W. Ihms (Kokomo, IN); Mark Wendell Gose (Kokomo, IN)

Assignee: BorgWarner US Technologies LLC

H02P27/06B60L3/003B60L15/007B60L15/08B60L50/40B60L50/51B60L50/60B60L50/64B60L53/20B60L53/22B60L53/62B60R16/02G01R15/20G06F1/08G06F13/4004H01L21/4882H01L23/15H01L23/3672H01L23/3675H01L23/3735H01L23/4006H01L23/467H01L23/473H01L23/49562H01L23/5383H01L24/32H01L24/33H01L25/072H01L25/50H02J7/0063H02M1/0009H02M1/0054H02M1/08H02M1/084H02M1/088H02M1/123H02M1/32H02M1/322H02M1/327H02M1/4258H02M1/44H02M3/33523H02M7/003H02M7/537H02M7/5387H02M7/53871H02M7/53875H02M7/5395H02P27/08H02P27/085H02P29/024H02P29/027H02P29/68H05K1/145H05K1/181H05K1/182H05K5/0247H05K7/20154H05K7/2039H05K7/2049H05K7/20854H05K7/209H05K7/20927H10D64/018B60L15/20B60L2210/30B60L2210/40B60L2210/42B60L2210/44B60L2240/36G06F2213/40H01L2023/405H01L2023/4087H01L2224/32225H01L2224/32245H01L2224/33181H02J2207/20H02P2207/05H03K19/20H05K2201/042H05K2201/10166

Abstract

Claims (18)

1. A power module, comprising:

a first substrate having an outer surface and an inner surface, the first substrate extending from a first longitudinal end toward a second longitudinal end;

a semiconductor die coupled to the inner surface of the first substrate; and

a second substrate having an outer surface and an inner surface, the semiconductor die being coupled to the inner surface of the second substrate, the second substrate extending from a first longitudinal end toward a second longitudinal end,

wherein the first longitudinal end of the first substrate is longitudinally offset from the first longitudinal end of the second substrate in a first direction, and

wherein the second longitudinal end of the first substrate is offset from the second longitudinal end of the second substrate in the first direction.

2. The power module of claim 1 , wherein the offset provides a first region on the inner surface of the first substrate and a second region on the inner surface of the second substrate for lead frame connections while maintaining a pre-offset distance between the inner surface of the first substrate and the inner surface of the second substrate.

3. The power module of claim 1 , wherein a length of the first substrate is approximately equal to a length of the second substrate.

4. The power module of claim 1 , wherein a length of the first substrate is greater than a length of the second substrate.

5. The power module of claim 1 , further including a first lead frame coupled to the inner surface of the first substrate.

6. The power module of claim 5 , further including a second lead frame coupled to the inner surface of the first substrate.

7. The power module of claim 5 , further including a second lead frame coupled to the inner surface of the second substrate.

8. The power module of claim 5 , wherein the first lead frame has a thickness greater than 500 microns.

9. The power module of claim 5 , wherein the first lead frame has a thickness greater than 700 microns.

10. The power module of claim 5 , wherein the first lead frame has a thickness greater than a space between the inner surface of the first substrate and the inner surface of the second substrate.

11. The power module of claim 1 , further including an overmold coupled to the first substrate, the second substrate, and the semiconductor die.

12. An inverter comprising the power module of claim 1 .

13. A vehicle comprising the inverter of claim 12 .

Assignments (2)

Continuity (5)

References Cited (295)