On-die termination of address and command signals
A memory device includes a set of inputs, and a first register that includes a first register field to store a value for enabling application of one of a plurality of command/address (CA) on-die termination (ODT) impedance values to first inputs that receive the CA signals; and a second register field to store a value for enabling application of one of a plurality of chip select (CS) ODT impedance values to a second input that receives the CS signal. A third register field may store a value for enabling application of a clock (CK) ODT impedance value to third inputs that receive the CK signal.
1. A memory controller to control the operation of a memory device, the memory controller comprising:
a command/address (CA) transmission circuit;
the memory controller to:
send, using the CA transmission circuit, command/address (CA) signals via a CA bus to respective inputs of the memory device and a chip select signal to a chip select input of the memory device; and
send to the memory device:
register values, for storage in a plurality of registers of the memory device, including a register value that selects from two or more impedance values of on-die termination (ODT) impedances to apply to each of the respective inputs of the memory device that receive the CA signals;
wherein the register values include one or more register values to selectively enable application of the ODT impedances to the respective inputs that receive the CA signals, and a register value that selectively enables application of a CS ODT impedance to the chip select input.
2. The memory controller of claim 1 , wherein the memory controller is configured to send to the memory device, for storage in a first register field of the plurality of registers in the memory device, a value for setting a nominal CA ODT impedance.
3. The memory controller of claim 2 , wherein the memory controller is configured to send to the memory device, for storage in a second register field of the plurality of registers in the memory device, a value for setting an alternative CA ODT impedance.
4. The memory controller of claim 3 , wherein the memory controller is configured to send to the memory device, for storage in a third register field of the plurality of registers in the memory device, a value for determining specifying how the alternative CA ODT impedance, for termination of one or more CA signal inputs of the memory device that receive one or more of the CA signals from the memory controller, is enabled.
5. The memory controller of claim 1 , wherein the memory controller is configured to send to the memory device, for storage in a respective register of the plurality of registers in the memory device, the value for selectively enabling application of the CS ODT impedance to the chip select input of the memory device.
6. The memory controller of claim 5 , wherein the CS ODT impedance is different from a CA ODT impedance specified by a register value sent by the memory controller for storage in a respective register of the plurality of registers of the memory device.
7. The memory controller of claim 1 , wherein the memory controller dynamically controls termination, at the memory device, of individual signal lines of the CA bus over which the command/address (CA) signals are sent to the memory device.
8. The memory controller of claim 1 , further including a driver to drive a chip select (CS) signal onto the CA bus, wherein the plurality of registers of the memory device include:
a first register comprising a plurality of register fields, wherein:
a first register field is configured to store a value for enabling application of one of a plurality of CA on-die termination (ODT) impedance values to first inputs of the memory device that receive the CA signals;
a second register field is configured to store a value for enabling application of one of a plurality of CS ODT impedance values to a second input of the memory device that receives the CS signal; and
a third register field is configured to store a value for enabling application of a CK ODT impedance value to third inputs of the memory device that receive a CK signal.
9. The memory controller of claim 8 , wherein the CA ODT impedance values are different from the CS ODT impedance values.
10. The memory controller of claim 8 , wherein the plurality of registers of the memory device include:
a second register comprising a plurality of register fields configured to store values for selecting one of the plurality of CA ODT impedance values for application to the first inputs of the memory device that receive the CA signals.
11. The memory controller of claim 10 , wherein the plurality of registers of the memory device include:
a third register configured to store values for selecting one of the plurality of CS ODT impedance values for application to the second input of the memory device that receives the CS signal.
12. The memory controller of claim 10 , wherein the plurality of register fields in the second register include a first register field to store a first value for setting a nominal termination impedance for the first inputs that receive the CA signals, and a second register field to store a second value for setting an alternative termination impedance for the first inputs that receive the CA signals.
13. The memory controller of claim 12 , wherein the plurality of register fields in the second register include a third register field to store a third value for specifying how the alternative termination impedance for the first inputs that receive the CA signals is enabled.
14. The memory controller of claim 1 , wherein the memory controller is configured to send to the memory device a CAODT control signal that enables or disables on-die termination of at least a subset of signal lines of the CA bus.
15. A method of operation of a memory controller for controlling a memory device, the method comprising:
sending, from the memory controller, command/address (CA) signals to respective inputs of the memory device; and
sending, from the memory controller to the memory device:
register values, for storage in a plurality of registers of the memory device, wherein the register values represent two or more impedance values of on-die termination (ODT) impedances to apply to the respective inputs of the respective memory device that receive the CA signals;
wherein the register values sent by the memory controller for storage in the plurality of registers of the memory device include one or more register values to selectively enable application of the ODT impedances to the respective inputs that receive the CA signals.
16. The method of claim 15 , including sending from the memory controller to the memory device, for storage in a first register field of the plurality of registers in the memory device, a value for setting a nominal CA ODT impedance.
17. The method of claim 16 , including sending from the memory controller to the memory device, for storage in a second register field of the plurality of registers in the memory device, a value for setting an alternative CA ODT impedance.
18. The method of claim 17 , including sending from the memory controller to the memory device, for storage in a third register field of the plurality of registers in the memory device, a value for determining specifying how the alternative CA ODT impedance, for termination of one or more CA signal inputs of the memory device that receive one or more of the CA signals from the memory controller, is enabled.
19. The method of claim 15 , including sending from the memory controller to the memory device, for storage in a respective register in the memory device, a value for selecting one of a plurality of chip select (CS) ODT impedances for application to an input of the memory device that receives a CS signal.
20. A memory controller to control the operation of a memory device, the memory controller comprising:
a circuit to drive command and address signals; and
a first circuit to drive a chip select (CS) signal;
the memory controller is configured to:
send, using the circuit to drive command and address signals, command/address (CA) signals to respective inputs of the memory device and, using the first circuit, the CS signal to a chip select input of the memory device; and
send to the memory device:
register values, for storage in a plurality of registers in the memory device, wherein the register values include:
values representing two or more impedance values of on-die termination (ODT) impedances to apply to the respective inputs of the respective memory device that receive the CA signals; and
a value for enabling application of one of a plurality of CS ODT impedance values to the chip select input of the memory device;
wherein the register values sent by the memory controller for storage in the plurality of registers in the memory device include one or more register values to selectively enable application of the ODT impedances to the respective inputs that receive the CA signals.