Half metallic Heusler multilayers with perpendicular magnetic anisotropy
A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler multilayer structure including a plurality of layers of two different Heusler compounds, at least one of which is half metallic. The half metallic Heusler multilayer structure is located outward of the templating layer and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the half metallic Heusler multilayer structure, and a magnetic layer is outward of the tunnel barrier.
1 . A magnetoresistive random-access memory cell, comprising:
a templating layer comprising a binary alloy having an alternating layer lattice structure;
a half metallic Heusler multilayer structure comprising a plurality of layers of two different Heusler compounds, at least one of which is half metallic, the half metallic Heusler multilayer structure being located outward of the templating layer and exhibiting perpendicular magnetic anisotropy (PMA);
a tunnel barrier outward of the half metallic Heusler multilayer structure; and
a magnetic layer outward of the tunnel barrier.
2 . The magnetoresistive random-access memory cell of claim 1 , wherein:
the two different Heusler compounds are designated as “A” and “B”;
the “A” Heusler compound is a half-metallic Heusler compound selected from the group consisting of Mn 2 FeSb, Mn 2 CoSi, Mn 2 MnAl, Co 2 CrAl, Co 2 CrGe, Co 2 CrSi, Mn 2 CoAl, Mn 2 CuSi, Mn 2 CoGe, Co 2 MnSi, Co 2 MnSb, Co 2 MnGe, Mn 2 CoAs, Mn 2 FeAs, Fe 2 MnSi, and Mn 2 MnAs; and
the “B” Heusler compound is selected from the group consisting of Mn 3 Ge, Mn 3 Al, Mn 2 CoSi, and Mn 2 CoAl.
3 . The magnetoresistive random-access memory cell of claim 2 , wherein the half metallic Heusler multilayer structure has at least one complete periodic substructure and no more than three periodic substructures, selected from the group consisting of 1×A/1×B, 2×A/1×B, 1×A/2×B, 2×A/2×B, 1×B/1×A, 2×B/1×A, 1×B/2×A, 2×B/2×A.
4 . The magnetoresistive random-access memory cell of claim 3 , wherein the half metallic Heusler multilayer structure has a periodic substructure selected from the group consisting of:
a single layer of Co 2 MnSi alternated with a single layer of Mn 2 MnGe,
a single layer of Co 2 MnSi alternated with a double layer of Mn 2 MnGe,
a single layer of Co 2 MnGe alternated with a single layer of Mn 2 MnGe,
a single layer of Co 2 MnGe alternated with a double layer of Mn 2 MnGe,
a single layer of Mn 2 CoAl alternated with a single layer of Mn 2 MnAl, and
a single layer of Co 2 MnSb alternated with a single layer of Mn 2 MnAl.
5 . The magnetoresistive random-access memory cell of claim 4 , wherein:
the half metallic Heusler multilayer structure has a periodic substructure selected from the group consisting of:
a single layer of Co 2 MnSi alternated with a single layer of Mn 2 MnGe,
a single layer of Co 2 MnSi alternated with a double layer of Mn 2 MnGe,
a single layer of Co 2 MnGe alternated with a single layer of Mn 2 MnGe,
a single layer of Co 2 MnGe alternated with a double layer of Mn 2 MnGe, and
a single layer of Mn 2 CoAl alternated with a single layer of Mn 2 MnAl; and
the templating layer comprises CoAl.
6 . The magnetoresistive random-access memory cell of claim 4 , wherein:
the half metallic Heusler multilayer structure has a periodic substructure comprising a single layer of Co 2 MnSb alternated with a single layer of Mn 2 MnAl; and
the templating layer is selected from the group consisting of RuAl, FeAl, and RuSi.
7 . The magnetoresistive random-access memory cell of claim 4 , wherein each single layer has a thickness of 1±0.1 unit cell and each double layer has a thickness of 2±0.2 unit cells.
8 . The magnetoresistive random-access memory cell of claim 3 , wherein:
the half metallic Heusler multilayer structure comprises a storage layer; and
the magnetic layer comprises a reference layer.
9 . The magnetoresistive random-access memory cell of claim 8 , wherein the tunnel barrier is selected from the group consisting of magnesium oxide and magnesium aluminum oxide.
10 . The magnetoresistive random-access memory cell of claim 8 , wherein the binary alloy is represented by A 1-x E x , wherein A is a transition metal element and E is a main group element including at least one of aluminum and gallium, and x is in the range from 0.42 to 0.55.
11 . The magnetoresistive random-access memory cell of claim 3 , wherein:
the half metallic Heusler multilayer structure comprises a reference layer; and
the magnetic layer comprises a storage layer.
12 . The magnetoresistive random-access memory cell of claim 1 , wherein the alternating layer lattice structure of the templating layer comprises a cesium chloride structure.
13 . The magnetoresistive random-access memory cell of claim 1 , wherein the templating layer is nonmagnetic at room temperature.
14 . The magnetoresistive random-access memory cell of claim 1 , wherein:
the half metallic Heusler multilayer structure has a calculated half metallic Heusler multilayer structure in-plane lattice constant determined from energy minimization calculations; and
the templating layer has a templating layer in-plane lattice constant that matches the calculated half metallic Heusler multilayer structure in-plane lattice constant determined from energy minimization calculations within plus or minus 2%.
15 . A magnetoresistive random-access memory array, comprising:
a plurality of bit lines and a plurality of complementary bit lines forming a plurality of bit line-complementary bit line pairs;
a plurality of word lines intersecting the plurality of bit line pairs at a plurality of cell locations; and
a plurality of magnetoresistive random-access memory cells located at each of the plurality of cell locations, each of the magnetoresistive random-access memory cells being electrically connected to a corresponding bit line and selectively interconnected to a corresponding one of the complementary bit lines under control of a corresponding one of the word lines, each of the plurality of magnetoresistive random-access memory cells comprising:
a templating layer comprising a binary alloy having an alternating layer lattice structure;
a half metallic Heusler multilayer structure comprising a plurality of layers of two different Heusler compounds, at least one of which is half metallic, the half metallic Heusler multilayer structure being located outward of the templating layer and exhibiting perpendicular magnetic anisotropy (PMA);
a tunnel barrier outward of the half metallic Heusler multilayer structure; and
a magnetic layer outward of the tunnel barrier.
16 . The magnetoresistive random-access memory array of claim 15 , wherein:
the two different Heusler compounds are designated as “A” and “B”;
the “A” Heusler compound is a half metallic Heusler compound selected from the group consisting of Mn 2 FeSb, Mn 2 CoSi, Mn 2 MnAl, Co 2 CrAl, Co 2 CrGe, Co 2 CrSi, Mn 2 CoAl, Mn 2 CuSi, Mn 2 CoGe, Co 2 MnSi, Co 2 MnSb, Co 2 MnGe, Mn 2 CoAs, Mn 2 FeAs, Fe 2 MnSi, and Mn 2 MnAs; and
the “B” Heusler compound is selected from the group consisting of Mn 3 Ge, Mn 3 Al, Mn 2 CoSi, and Mn 2 CoAl.
17 . The magnetoresistive random-access memory array of claim 16 , wherein the half metallic Heusler multilayer structure has at least one complete periodic substructure and no more than three periodic substructures, selected from the group consisting of 1×A/1×B, 2×A/1×B, 1×A/2×B, 2×A/2×B, 1×B/1×A, 2×B/1×A, 1×B/2×A, 2×B/2×A.
18 . The magnetoresistive random-access memory array of claim 17 , wherein the half metallic Heusler multilayer structure has a periodic substructure selected from the group consisting of:
a single layer of Co 2 MnSi alternated with a single layer of Mn 2 MnGe,
a single layer of Co 2 MnSi alternated with a double layer of Mn 2 MnGe,
a single layer of Co 2 MnGe alternated with a single layer of Mn 2 MnGe,
a single layer of Co 2 MnGe alternated with a double layer of Mn 2 MnGe,
a single layer of Mn 2 CoAl alternated with a single layer of Mn 2 MnAl, and
a single layer of Co 2 MnSb alternated with a single layer of Mn 2 MnAl.
19 . The magnetoresistive random-access memory array of claim 15 , wherein:
the half metallic Heusler multilayer structure comprises one of a storage layer and a reference layer; and
the magnetic layer comprises another of the storage layer and the reference layer.
20 . A magnetoresistive random-access memory cell, comprising:
a magnetic layer;
a tunnel barrier outward of the magnetic layer;
a half metallic Heusler multilayer structure comprising a plurality of layers of two different Heusler compounds, at least one of which is half metallic, the half metallic Heusler multilayer structure being located outward of the tunnel barrier and exhibiting perpendicular magnetic anisotropy (PMA), wherein:
the two different Heusler compounds are designated as “A” and “B”;
the half metallic Heusler multilayer structure has at least one complete periodic substructure and no more than three periodic substructures, selected from the group consisting of 1×A/1×B, 2×A/1×B, 1×A/2×B, 2×A/2×B, 1×B/1×A, 2×B/1×A, 1×B/2×A, 2×B/2×A; and
each single layer has a thickness of 1±0.1 unit cell and each double layer has a thickness of 2±0.2 unit cells.
21 . The magnetoresistive random-access memory cell of claim 20 , wherein:
the “A” Heusler compound is a half-metallic Heusler compound selected from the group consisting of Mn 2 FeSb, Mn 2 CoSi, Mn 2 MnAl, Co 2 CrAl, Co 2 CrGe, Co 2 CrSi, Mn 2 CoAl, Mn 2 CuSi, Mn 2 CoGe, Co 2 MnSi, Co 2 MnSb, Co 2 MnGe, Mn 2 CoAs, Mn 2 FeAs, Fe 2 MnSi, and Mn 2 MnAs; and
the “B” Heusler compound is selected from the group consisting of Mn 3 Ge, Mn 3 Al, Mn 2 CoSi, and Mn 2 CoAl.