Processing method of bonded wafer
A method for processing a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part and a notch are to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In forming the modified layer, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer from an inner side toward an outer side of the first wafer in a radial direction to thereby form the modified layers as to widen toward the lower side.
1 . A processing method of a bonded wafer formed through bonding, by a joining layer, a front surface of a first wafer and a front surface or a back surface of a second wafer, the first wafer having, on the front surface thereof, a device region in which a plurality of devices are formed and an outer circumferential surplus region that surrounds the device region and in which a chamfered part is formed at an outer circumferential edge and a notch is formed, the processing method comprising:
a focal point setting step of causing a laser beam with a wavelength having transmissibility with respect to the first wafer to branch into a plurality of branch laser beams and setting focal points of the respective branch laser beams at different positions;
a modified layer forming step of forming a plurality of modified layers in a form of rings through holding a side of the second wafer by a first chuck table, positioning the focal points of the branch laser beams inside the first wafer on an inner side in a radial direction relative to the chamfered part and the notch from a back surface of the first wafer, and executing irradiation with the branch laser beams; and
a grinding step of holding the side of the second wafer by a second chuck table and grinding the back surface of the first wafer to thin the first wafer after the modified layer forming step is executed, wherein,
in the modified layer forming step, the focal points of the branch laser beams are set in a form of descending stairs in such a manner as to gradually get closer to the joining layer from the inner side toward an outer side of the first wafer in the radial direction to thereby form the modified layers as to widen toward the lower side.
2 . The processing method of a bonded wafer according to claim 1 , wherein
cracks develop from the plurality of modified layers toward the joining layer, and in the grinding step, the modified layers are removed due to the grinding of the back surface of the first wafer, and the chamfered part and the notch are removed from the first wafer due to the cracks.
3 . The processing method according to claim 2 , wherein
the cracks develop toward an outer side of the joining layer in the radial direction.