Semiconductor device, solid-state imaging device and electronic apparatus
A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.
1. A light detecting device, comprising:
a first section including a first semiconductor layer and a first layer including a first electrode;
a second section including a second semiconductor layer, a second layer including a second electrode, and a third layer including a third electrode, wherein the second layer and the third layer are separated from another by the second semiconductor layer;
a third section including a third semiconductor layer and a fourth layer including a fourth electrode; and
a through electrode, wherein the through electrode is a unitary structure, wherein a first portion of the unitary structure of the through electrode extends into the second layer, wherein a second portion of the unitary structure of the through electrode extends through the second semiconductor layer, and wherein a third portion of the unitary structure of the through electrode extends into the third layer and terminates at an electrode disposed in the third layer,
wherein the first section, the second section, and the third section are stacked such that the first layer and the second layer face each other, and the third layer and the fourth layer face each other,
wherein the first electrode is directly bonded to the second electrode, and
wherein the third electrode is directly bonded to the fourth electrode.
2. The light detecting device according to claim 1 , wherein the first layer, the second layer, the third layer, and the fourth layer are multilayer wire layers.
3. The light detecting device according to claim 1 , wherein the first layer is joined to the second layer.
4. The light detecting device according to claim 3 , wherein the third layer is joined to the fourth layer.
5. The light detecting device according to claim 1 , wherein the through electrode is in contact with a wiring of the third layer.
6. The light detecting device according to claim 1 , further comprising an electrode pad.
7. The light detecting device according to claim 6 , wherein the electrode pad is disposed in the first section.
8. The light detecting device according to claim 7 , wherein the electrode pad is disposed in the first section and is exposed by a pad hole.
9. The light detecting device according to claim 6 , wherein the electrode pad is for connecting the light detecting device to an external device.
10. The light detecting device according to claim 1 , wherein the first section includes a plurality of photoelectric conversion portions.
11. The light detecting device according to claim 10 , wherein the second section includes a logic circuit.
12. The light detecting device according to claim 11 , wherein the third section includes a memory circuit.
13. The light detecting device according to claim 1 , wherein the first section is on a light incident surface side of the light detecting device.
14. An electronic apparatus, comprising:
an optical unit including a lens group; and
a light detecting device receiving incident light from the optical unit, the light detecting device including:
a first section including a first semiconductor layer and a first layer including a first electrode;
a second section including a second semiconductor layer, a second layer including a second electrode, and a third layer including a third electrode, wherein the second layer and the third layer are separated from another by the second semiconductor layer;
a third section including a third semiconductor layer and a fourth layer including a fourth electrode; and
a through electrode, wherein the through electrode is a unitary structure, wherein a first portion of the unitary structure of the through electrode extends into the second layer, wherein a second portion of the unitary structure of the through electrode extends through the second semiconductor layer, and wherein a third portion of the unitary structure of the through electrode extends into the third layer and terminates at an electrode disposed in the third layer,
wherein the first section, the second section, and the third section are stacked such that the first layer and the second layer face each other, and the third layer and the fourth layer face each other,
wherein the first electrode is directly bonded to the second electrode, and
wherein the third electrode is directly bonded to the fourth electrode.
15. The electronic apparatus according to claim 14 , wherein the first section is on a light incident surface side of the light detecting device.