IP Library Granted Patent US 12,354,800
Granted Patent B2
US 12,354,800 · App. 18/673,694 · Granted Jul 8, 2025

Multilayer capacitor and method of manufacturing the same

Inventors: Yun Sung Kang (Suwon-si, KR); Min Jung Cho (Suwon-si, KR); Yun Hee Kim (Suwon-si, KR)
Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
H01G4/0085H01G4/248H01G4/30
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,354,800
App. No.
18/673,694
Granted
Jul 8, 2025
Kind
B2
Abstract

A multilayer capacitor includes a body including a stack structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes stacked with respective dielectric layers interposed therebetween, external electrodes disposed on external surfaces of the body and connected to the internal electrodes, and an insulating layer covering a surface of the body. One of the external electrodes includes a metal layer connected to the insulating layer, and the insulating layer includes an oxide of a metal component of the metal layer.

Claims (36)

1. A multilayer capacitor comprising:

a body including a dielectric layer and a plurality of internal electrodes stacked with the dielectric layer interposed therebetween;

external electrodes disposed on the body and connected to the internal electrodes; and

an insulating layer covering a surface of the body,

wherein the insulating layer includes an oxide of a metal included the at least one of the external electrodes, and

the insulating layer is also disposed in a groove in the surface of the body.

2. The multilayer capacitor of claim 1 , wherein the at least one of the external electrodes include Al, and the insulating layer includes Al oxide.

3. The multilayer capacitor of claim 1 , wherein a thickness of the insulating layer is 5 nm to 1 μm.

4. The multilayer capacitor of claim 1 , wherein the at least one of the external electrodes cover the surface of the body, and have a side surface connected to a side surface of the insulating layer.

5. The multilayer capacitor of claim 1 , wherein the at least one of the external electrodes include a sintered electrode.

6. The multilayer capacitor of claim 2 , wherein the at least one of the external electrodes include a sintered electrode.

7. The multilayer capacitor of claim 6 , wherein a thickness of the insulating layer is 5 nm to 1 μm.

8. The multilayer capacitor of claim 5 , wherein the at least one of the external electrodes further include a plating layer including at least one of Ni and Sn.

9. The multilayer capacitor of claim 6 , wherein the at least one of the external electrodes further include a plating layer including at least one of Ni and Sn.

10. The multilayer capacitor of claim 6 , wherein the at least one of the external electrodes include a conductive resin electrode.

11. A multilayer capacitor comprising:

a body including a dielectric layer and a plurality of internal electrodes stacked with the dielectric layer interposed therebetween;

external electrodes disposed on the body and connected to the internal electrodes; and

an insulating layer covering a surface of the body,

wherein at least one of the external electrodes include a conductive layer including a metal and connected to the insulating layer, and

the insulating layer is also disposed in a groove in the surface of the body.

12. The multilayer capacitor of claim 11 , wherein the conductive layer covers the surface of the body, and has a side surface connected to a side surface of the insulating layer.

13. The multilayer capacitor of claim 12 , wherein the at least one of the external electrodes further include an electrode layer covering the conductive layer.

14. The multilayer capacitor of claim 13 , wherein the metal of the conductive layer and a metal of the electrode layer form an intermetallic compound layer.

15. The multilayer capacitor of claim 13 , wherein the electrode layer includes a sintered electrode.

16. The multilayer capacitor of claim 13 , wherein the electrode layer includes a conductive resin electrode.

17. The multilayer capacitor of claim 11 , wherein the conductive layer and the insulating layer have the same thickness.

18. The multilayer capacitor of claim 11 , wherein a thickness of the insulating layer is 5 nm to 1 μm.

19. The multilayer capacitor of claim 11 , wherein the at least one of the external electrodes further include an electrode layer disposed between the conductive layer and the body.

20. The multilayer capacitor of claim 19 , wherein the electrode layer is thicker than the insulating layer.

21. The multilayer capacitor of claim 19 , wherein a portion of the conductive layer is disposed between a side surface of the electrode layer and the insulating layer.

22. The multilayer capacitor of claim 19 , wherein the conductive layer covers a surface of the electrode layer and is bent along the surface of the electrode layer to be connected to the insulating layer.

23. The multilayer capacitor of claim 19 , wherein the at least one of the external electrodes further include an additional electrode layer covering the conductive layer.

24. The multilayer capacitor of claim 23 , wherein the additional electrode layer includes a sintered electrode.

25. The multilayer capacitor of claim 23 , wherein the additional electrode layer includes a conductive resin electrode.

26. The multilayer capacitor of claim 11 , wherein the conductive layer includes Al, and the insulating layer includes Al oxide.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 24, 2024
From: KANG, YUN SUNG; CHO, MIN JUNG; KIM, YUN HEE
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 067520/0346 →
Priority Claims (1)
KR 10-2020-0146115 · Nov 4, 2020 · national
Continuity (3)
Continuation 18200309 · May 22, 2023
Continuation 17320966 · May 14, 2021
Related Publication 20240312708A1 · Sep 19, 2024
References Cited (60)
US 5339068A · Tsunoda et al. · 1994 [cited by applicant]
US 8058968B2 · Hirano et al. · 2011 [cited by applicant]
US 9370102B2 · Lee et al. · 2016 [cited by applicant]
US 9959973B2 · Saito et al. · 2018 [cited by applicant]
US 10366834B1 · Lee et al. · 2019 [cited by applicant]
US 10475581B2 · Kaneda et al. · 2019 [cited by applicant]
US 10553359B1 · Park et al. · 2020 [cited by applicant]
US 10770232B2 · Han et al. · 2020 [cited by applicant]
US 11183332B2 · Kim et al. · 2021 [cited by applicant]
US 11302480B2 · Takahashi et al. · 2022 [cited by applicant]
US 11476049B2 · Sakurai et al. · 2022 [cited by applicant]
US 11694843B2 · Kang · 2023 [cited by examiner]
US 12027315B2 · Kang · 2024 [cited by examiner]
US 20070109718A1 · Horie et al. · 2007 [cited by applicant]
US 20090290284A1 · Gabler et al. · 2009 [cited by applicant]
US 20090323253A1 · Kobayashi et al. · 2009 [cited by applicant]
US 20100157507A1 · Matsumoto et al. · 2010 [cited by applicant]
US 20100290172A1 · Motoki et al. · 2010 [cited by applicant]
US 20110170227A1 · Schmid et al. · 2011 [cited by applicant]
US 20120313489A1 · Shirakawa et al. · 2012 [cited by applicant]
US 20130299215A1 · Taseda et al. · 2013 [cited by applicant]
US 20140125194A1 · Lee et al. · 2014 [cited by applicant]
US 20140182907A1 · Lee et al. · 2014 [cited by applicant]
US 20150053472A1 · Lee et al. · 2015 [cited by applicant]
US 20160086733A1 · Saito et al. · 2016 [cited by applicant]
US 20170018362A1 · Nishisaka et al. · 2017 [cited by applicant]
US 20170260046A1 · Hwang et al. · 2017 [cited by applicant]
US 20180108479A1 · Sato et al. · 2018 [cited by applicant]
US 20190103224A1 · Han et al. · 2019 [cited by applicant]
US 20190103225A1 · Han et al. · 2019 [cited by applicant]
US 20190189348A1 · Choi et al. · 2019 [cited by applicant]
US 20190341190A1 · Lee · 2019 [cited by applicant]
US 20190355520A1 · Nakamura et al. · 2019 [cited by applicant]
US 20190371525A1 · Zaima et al. · 2019 [cited by applicant]
US 20200066454A1 · Cha et al. · 2020 [cited by applicant]
US 20210005384A1 · Lee et al. · 2021 [cited by applicant]
US 20210012964A1 · Lee et al. · 2021 [cited by applicant]
US 20210012965A1 · Lee et al. · 2021 [cited by applicant]
US 20210065986A1 · Kim et al. · 2021 [cited by applicant]
US 20210065988A1 · Kim et al. · 2021 [cited by applicant]
US 20210082622A1 · Kim et al. · 2021 [cited by applicant]
US 20210193391A1 · Yi et al. · 2021 [cited by applicant]
US 20210375549A1 · Okada et al. · 2021 [cited by applicant]
US 20210375550A1 · Yatagawa et al. · 2021 [cited by applicant]
US 20220139616A1 · Kang et al. · 2022 [cited by applicant]
JP H07192968A · 1995 [cited by applicant]
JP 2019117942A · 2019 [cited by applicant]
JP 2020031202A · 2020 [cited by applicant]
JP 2020061391A · 2020 [cited by applicant]
KR 1020170009724A · 2017 [cited by applicant]
KR 1020190038237A · 2019 [cited by applicant]
KR 1020190038249A · 2019 [cited by applicant]
KR 1020200006416A · 2020 [cited by applicant]
Notice of Allowance issued in corresponding U.S. Appl. No. 17/320,966 dated Mar. 8, 2023. [cited by applicant]
Office Action issued in corresponding U.S. Appl. No. 17/320,966 dated Nov. 23, 2022. [cited by applicant]
Notice of Allowance issued in corresponding U.S. Appl. No. 18/200,309 dated Feb. 27, 2024. [cited by applicant]
Office Action issued in corresponding U.S. Appl. No. 18/200,309 dated Dec. 20, 2023. [cited by applicant]
Office Action issued in corresponding Korean Patent Application No. 10-2023-0054815 on May 21, 2024, with English abstract. [cited by applicant]
Office Action dated Aug. 20, 2024, issued in corresponding Japanese Patent Application No. 2021-080803 with an English translation. [cited by applicant]
Office Action issued in corresponding Japanese Patent Application No. 2021-080803 dated Mar. 4, 2025, with English translation. [cited by applicant]