Wafer bonding for 3D device packaging fabrication
An apparatus and method bond a first wafer to a second wafer. The apparatus includes a first pressure application device configured to apply pressure at a central region of the first wafer in a direction toward the second wafer to initiate a bonding process between the first wafer and the second wafer. The apparatus also includes one or more second pressure application devices configured to apply pressure between the central region and an outer edge of the first wafer to complete the bonding process. The one or more second pressure application devices apply pressure on the first wafer after the first pressure application device has initiated the bonding process and while the first pressure application device continues to apply pressure at the central region. A controller controls the first pressure application device and the one or more second pressure application devices.
1. An apparatus to bond a first wafer to a second wafer, the apparatus comprising:
a first pressure application device configured to apply pressure at a central region of the first wafer in a direction toward the second wafer to initiate a bonding process between the first wafer and the second wafer;
one or more second pressure application devices configured to apply pressure between the central region and an outer edge of the first wafer to complete the bonding process, wherein the one or more second pressure application devices apply pressure on the first wafer in the direction toward the second wafer after the first pressure application device has initiated the bonding process and while the first pressure application device continues to apply pressure at the central region,
wherein the first pressure application device includes a pin and the second pressure application devices include a set of pins arranged to encircle the pin at a first radial distance from the pin,
wherein the set of pins is arranged to begin applying pressure on the first wafer simultaneously, and each of the set of pins is arranged to move radially outward to a second radial distance from the pin, and
wherein the set of pins is arranged to continue to apply pressure on the first wafer while moving from the first radial distance to the second radial distance; and
a controller configured to control an amount of pressure applied by the first pressure application device and the one or more second pressure application devices on the first wafer in the direction toward the second wafer.
2. The apparatus according to claim 1 , further comprising a chuck on which the first wafer sits, wherein the chuck is flexible and the first pressure application device and the one or more second pressure application devices apply pressure on the first wafer through the chuck.
3. The apparatus according to claim 1 , further comprising a chuck on which the first wafer sits, wherein the chuck is non-flexible and the first pressure application device and the one or more second pressure application devices apply pressure on the first wafer through grooves in the chuck.
4. The apparatus according to claim 1 , further comprising the first pressure application device and the one or more second pressure application devices configured to apply pressure on the second wafer.
5. The apparatus according to claim 1 , wherein the first wafer is disposed above the second wafer and the first pressure application device and the one or more second pressure application devices is configured to apply downward pressure on the first wafer to bond with the second wafer.
6. The apparatus according to claim 1 , wherein the first pressure application device is a pin and the second pressure application devices are links on a chain that spiral down, sequentially, to apply pressure on the first wafer.
7. The apparatus according to claim 1 , wherein one or both of the first wafer and the second wafer sits on a corresponding chuck including temperature control elements to heat the chuck uniformly or with a radially progressive temperature gradient.
8. The apparatus according to claim 7 , wherein the temperature control elements are formed as concentric rings.
9. The apparatus according to claim 8 , wherein the temperature control elements are further formed as radial spikes.
10. The apparatus according to claim 7 , wherein the temperature control elements are formed as a coil.
11. The apparatus according to claim 7 , wherein the temperature control elements are randomly arranged on the chuck.
12. An apparatus to bond a first wafer to a second wafer, the apparatus comprising:
a first pressure application device configured to apply pressure at a central region of the first wafer in a direction toward the second wafer to initiate a bonding process between the first wafer and the second wafer;
one or more second pressure application devices configured to apply pressure between the central region and an outer edge of the first wafer to complete the bonding process, wherein the one or more second pressure application devices apply pressure on the first wafer in the direction toward the second wafer after the first pressure application device has initiated the bonding process and while the first pressure application device continues to apply pressure at the central region,
wherein the first pressure application device includes a pin and the second pressure application device includes a cone, and
wherein a circular base of the cone is arranged to begin applying pressure on the first wafer at a first radial distance from the pin, and the cone is arranged to spread radially outward to a second radial distance from the pin, and
wherein the cone is arranged to continue to apply pressure on the first wafer while the circular base of the cone moves from the first radial distance to the second radial distance; and
a controller configured to control an amount of pressure applied by the first pressure application device and the one or more second pressure application devices on the first wafer in the direction toward the second wafer.