Self-aligned source for split-gate non-volatile memory cell
A memory device having a pair of conductive floating gates with inner sidewalls facing each other, and disposed over and insulated from a substrate of first conductivity type. A pair of spaced apart conductive control gates each disposed over and insulated from one of the floating gates, and each including inner sidewalls facing each other. A pair of first spacers of insulation material extending along control gate inner sidewalls and over the floating gates. The floating gate inner sidewalls are aligned with side surfaces of the first spacers. A pair of second spacers of insulation material each extend along one of the first spacers and along one of the floating gate inner sidewalls. A trench formed into the substrate having sidewalls aligned with side surfaces of the second spacers. Silicon carbon disposed in the trench. Material implanted into the silicon carbon forming a first region having a second conductivity type.
1. A memory device, comprising:
a pair of spaced apart conductive floating gates that include inner sidewalls that face each other, wherein the floating gates are disposed over and insulated from a substrate of first conductivity type;
a pair of spaced apart conductive control gates each disposed over and insulated from one of the floating gates, wherein each of the control gates includes opposing inner and outer sidewalls, and wherein the inner sidewalls of the control gates face each other;
a pair of first spacers of insulation material extending along the inner sidewalls of the control gates and disposed over the floating gates, wherein the inner sidewalls of the floating gates are aligned with side surfaces of the pair of first spacers;
a pair of second spacers of insulation material each extending along one of the first spacers and along the inner sidewall of one of the floating gates;
a trench formed into the substrate having sidewalls that are aligned with side surfaces of the pair of second spacers;
silicon carbon disposed in the trench; and
material implanted into the silicon carbon forming a first region therein having a second conductivity type.
2. The memory device of claim 1 , further comprising:
a pair of blocks of insulation material each disposed over one of the control gates, wherein each of the first and second spacers extend at least partially along one of the blocks of insulation material.
3. The memory device of claim 1 , further comprising:
silicon dioxide and silicon nitride disposed between each of the control gates and one of the pair of first spacers.
4. The memory device of claim 1 , further comprising:
an erase gate of conductive material disposed over and insulated from the first region.
5. The memory device of claim 1 , further comprising:
a pair of wordline gates each disposed adjacent to and insulated from one of the outer sidewalls and the substrate.