Substrate processing method and substrate processing apparatus
A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.
1. A manufacturing method of a semiconductor device comprising:
(a) generating hydrogen radicals and oxygen radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen gas or a mixed gas of hydrogen gas and oxygen-containing gas, and oxidizing a silicon surface of a substrate on which the silicon surface and a metal surface are exposed by exposing the surface of the substrate to the hydrogen radicals and the oxygen radicals to obtain the substrate on which the metal surface and an oxidized silicon surface are formed; and
(b) after performing (a), continuing the generation of the hydrogen radicals and stopping the generation of the oxygen radicals, by plasma excitation of hydrogen gas without oxygen gas and oxygen-containing gas, and exposing the surface of the substrate to a reducing atmosphere created with the hydrogen radicals,
wherein the oxygen radicals generated in (a) is remained in (b) in a space where the substrate is exposed.
2. The manufacturing method of claim 1 , wherein the oxygen-containing gas is at least one selected from the group consisting of nitrous oxide gas (N 2 O) and nitric oxide (NO).
3. The manufacturing method of claim 1 , wherein
the hydrogen radicals and the oxygen radicals are generated in (a) by plasma excitation of the mixed gas of hydrogen gas and oxygen gas or the mixed gas of hydrogen gas and oxygen-containing gas supplied in a processing chamber where the substrate is processed, and
the hydrogen radicals are generated in (b) by plasma excitation of hydrogen gas supplied in the processing chamber.
4. The manufacturing method of claim 3 , wherein hydrogen gas is continuously supplied into the processing chamber while plasma excitation of gas in the processing chamber is performed.
5. The manufacturing method of claim 1 , wherein
the plasma excitation of the mixed gas in (a) is caused by plasma discharge of the mixed gas of hydrogen gas and oxygen gas or the mixed gas of hydrogen gas and oxygen-containing gas in a processing chamber where the substrate is processed, and
the plasma excitation of the hydrogen gas in (b) is caused by plasma discharge of the hydrogen gas in the processing chamber.
6. The manufacturing method of claim 5 , wherein the hydrogen gas is continuously supplied in the processing chamber while the plasma discharge continues.
7. The manufacturing method of claim 5 , wherein a discharge electric power of the plasma discharge of the hydrogen gas in (b) is gradually reduced.
8. A manufacturing method of a semiconductor device comprising:
(a) generating hydrogen radicals and oxygen radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen gas or a mixed gas of hydrogen gas and oxygen-containing gas supplied in a process chamber in which a substrate is placed, and oxidizing a silicon surface of the substrate on which the silicon surface and a metal surface are exposed by exposing the surface of the substrate to the hydrogen radicals and oxygen radicals to obtain the substrate on which the metal surface and an oxidized silicon surface are formed; and
(b) after performing (a), continuing the generation of the hydrogen radicals and stopping the generation of the oxygen radicals, by plasma excitation of hydrogen gas, supplied in the processing chamber without oxygen gas and oxygen-containing gas and exposing the surface of the substrate to a reducing atmosphere created with the hydrogen radicals,
wherein (a) and (b) are sequentially performed in this order without interruption and the surface of the substrate is continuously exposed to the hydrogen radicals throughout (a) and (b).
9. The manufacturing method of claim 8 , wherein hydrogen gas is continuously supplied into the processing chamber while plasma excitation of gas in the processing chamber is performed.
10. A manufacturing method of a semiconductor device comprising:
(a) generating hydrogen radicals and oxygen radicals by plasma discharge of a mixed gas of hydrogen gas and oxygen gas or a mixed gas of hydrogen gas and oxygen-containing gas supplied in a process chamber in which a substrate is placed, and oxidizing a silicon surface of the substrate on which the silicon surface and a metal surface are exposed by exposing the surface of the substrate to the hydrogen radicals and the oxygen radicals to obtain the substrate on which the metal surface and an oxidized silicon surface are formed; and
(b) after performing (a), continuing the generation of the hydrogen radicals and stopping the generation of the oxygen radicals, by plasma discharge of hydrogen gas supplied in the processing chamber without oxygen gas and oxygen-containing gas, and exposing the surface of the substrate to a reducing atmosphere created with the hydrogen radicals,
wherein (a) and (b) are sequentially performed in this order without interruption and the surface of the substrate is continuously exposed to the hydrogen radicals throughout (a) and (b).
11. The manufacturing method of claim 10 , wherein hydrogen gas is continuously supplied into the processing chamber while plasma discharge of gas in the processing chamber is performed.
12. The manufacturing method of claim 1 , wherein in (b), the surface of the substrate is exposed to the reducing atmosphere created with the hydrogen radicals until longevity of the oxygen radicals generated in (a) expires.
13. The manufacturing method of claim 1 , wherein (b) is performed until longevity of the oxygen radicals generated in (a) expires.
14. The manufacturing method of claim 1 , wherein (b) is performed so that longevity of the oxygen radicals generated in (a) and that of the hydrogen radicals generated in (b) expire simultaneously.
15. The manufacturing method of claim 1 , wherein (a) and (b) are sequentially performed in this order without interruption and the surface of the substrate is continuously exposed to hydrogen radicals throughout (a) and (b).