Display device and method for manufacturing the same
A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
1. A semiconductor device comprising:
an oxide semiconductor layer over a substrate;
a first insulating film in contact with a side surface of the oxide semiconductor layer;
a first conductive layer over the first insulating film, the first conductive layer being in contact with a portion of a top surface of the oxide semiconductor layer;
a second insulating film in contact with a side surface of the oxide semiconductor layer;
a second conductive layer over the second insulating film, the second conductive layer being in contact with a portion of a top surface of the oxide semiconductor layer;
a third insulating film over and in contact with the oxide semiconductor layer, the third insulating film being spaced apart from the first insulating film and the second insulating film; and
a third conductive layer over the third insulating film.
2. The semiconductor device according to claim 1 , wherein the first conductive layer and the second conductive layer are a source electrode and a drain electrode, and the third conductive layer is a gate electrode.
3. The semiconductor device according to claim 1 , further comprising a fourth insulating in contact with a portion of a top surface of the oxide semiconductor layer.
4. The semiconductor device according to claim 1 , wherein the first conductive layer, the second conductive layer and the third conductive layer are formed from a same step.
5. A semiconductor device comprising:
an oxide semiconductor layer over a substrate;
a first insulating film in contact with a side surface of the oxide semiconductor layer;
a first conductive layer over the first insulating film, the first conductive layer being in contact with a portion of a top surface of the oxide semiconductor layer;
a second insulating film in contact with a side surface of the oxide semiconductor layer;
a second conductive layer over the second insulating film, the second conductive layer being in contact with a portion of a top surface of the oxide semiconductor layer;
a third insulating film over and in contact with the oxide semiconductor layer, the third insulating film being spaced apart from the first insulating film and the second insulating film; and
a third conductive layer over the third insulating film,
wherein the third insulating film has a tapered side surface.
6. The semiconductor device according to claim 5 , wherein the first conductive layer and the second conductive layer are a source electrode and a drain electrode, and the third conductive layer is a gate electrode.
7. The semiconductor device according to claim 5 , further comprising a fourth insulating in contact with a portion of a top surface of the oxide semiconductor layer.
8. The semiconductor device according to claim 5 , wherein the first conductive layer, the second conductive layer and the third conductive layer are formed from a same step.
9. A semiconductor device comprising:
an oxide semiconductor layer over a substrate;
a first insulating film in contact with a side surface of the oxide semiconductor layer;
a first conductive layer over the first insulating film, the first conductive layer being in contact with a portion of a top surface of the oxide semiconductor layer;
a second insulating film in contact with a side surface of the oxide semiconductor layer;
a second conductive layer over the second insulating film, the second conductive layer being in contact with a portion of a top surface of the oxide semiconductor layer;
a third insulating film over and in contact with the oxide semiconductor layer, the third insulating film being spaced apart from the first insulating film and the second insulating film;
a third conductive layer over the third insulating film; and
a fourth conductive layer under the oxide semiconductor layer,
wherein the third insulating film has a tapered side surface, and
wherein a width of the fourth conductive layer is larger than a width of the oxide semiconductor layer in a channel length direction.
10. The semiconductor device according to claim 9 , wherein the first conductive layer and the second conductive layer are a source electrode and a drain electrode, and the third conductive layer is a gate electrode.
11. The semiconductor device according to claim 9 , further comprising a fourth insulating in contact with a portion of a top surface of the oxide semiconductor layer.
12. The semiconductor device according to claim 9 , wherein the first conductive layer, the second conductive layer and the third conductive layer are formed from a same step.