IP Library › Granted Patent US 12,738,196
Granted Patent B2
US 12,738,196 · App. 18/701,699 · Granted Sep 15, 2026

Display device and electronic device

Inventors: Susumu Kawashima (Atsugi, JP); Koji Kusunoki (Isehara, JP); Tomoaki Atsumi (Hadano, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G09G3/32G09G2310/066G09G2310/08G09G2320/0242G09G2320/0633G09G2330/023
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,738,196
App. No.
18/701,699
Granted
Sep 15, 2026
Kind
B2
Abstract

A display device whose change in chromaticity is small and grayscale controllability is high is provided. Light emission of the light-emitting device can be performed by PAM and PWM control (a pulse width control involving changes in amplitude), so that the amount of change in chromaticity can be reduced and the controllability on the low grayscale side can be increased. The display device includes a pulse-signal-generation portion and a light-emitting control portion in a pixel and is capable of charging a signal potential in the light-emitting control portion and then discharging the signal potential in accordance with a pulse signal generated in the pulse-signal-generation portion. Thus, the light-emitting device can emit light in a desired period with desired emission intensity.

Claims (70)

1 . A display device comprising:

a pixel, the pixel comprising:

a pulse-signal-generation portion; and

a light-emitting control portion,

wherein the light-emitting control portion comprises a first transistor, a second transistor, a third transistor, a capacitor, and a light-emitting device,

wherein the pulse-signal-generation portion comprises a fourth transistor and a fifth transistor,

wherein the light-emitting device emits light in accordance with a data potential charged in the light-emitting control portion,

wherein the data potential is discharged in accordance with a pulse signal generated in the pulse-signal-generation portion,

wherein a gate of the first transistor is electrically connected to one electrode of the capacitor, one of a source and a drain of the second transistor, and one of a source and a drain of the third transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one electrode of the light-emitting device and the other electrode of the capacitor,

wherein a first data potential is supplied to the other of the source and the drain of the second transistor,

wherein a gate of the third transistor is electrically connected to one of a source and a drain of the fourth transistor,

wherein a gate of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor,

wherein the other of the source and the drain of the fourth transistor is electrically connected to a first wiring, and

wherein the other of the source and the drain of the fifth transistor is electrically connected to a second wiring supplying a second data potential.

2 . The display device according to claim 1 ,

wherein the light-emitting device is a micro LED.

3 . An electronic device comprising:

the display device according to claim 1 ; and

a camera.

4 . The display device according to claim 1 , wherein the light-emitting device is configured to be turned off, when the data potential is discharged.

5 . A display device comprising:

a pixel, the pixel comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor;

a capacitor; and

a light-emitting device,

wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of the third transistor, and one electrode of the capacitor,

wherein one of a source and a drain of the first transistor is electrically connected to one electrode of the light-emitting device and the other electrode of the capacitor,

wherein a first data potential is charged in the gate of the first transistor through the second transistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor and a gate of the third transistor,

wherein a gate of the fourth transistor is electrically connected to one of a source and a drain of the sixth transistor,

wherein the other of the source and the drain of the fourth transistor is electrically connected to a first wiring, and

wherein the other of the source and the drain of the sixth transistor is electrically connected to a second wiring supplying a second data potential.

6 . The display device according to claim 5 ,

wherein a slope-shaped signal potential is input to the fourth transistor, and

wherein a reset potential is input to the fifth transistor.

7 . The display device according to claim 5 ,

wherein the light-emitting device is configured to emit light, when the first data potential is charged in the gate of the first transistor, and

wherein the light-emitting device is configured to be turned off, when the first data potential charged in the gate of the first transistor is discharged.

8 . A display device comprising:

a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor;

a first capacitor;

a second capacitor; and

a light-emitting device,

wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of the third transistor, and one electrode of the first capacitor,

wherein one of a source and a drain of the first transistor is electrically connected to one electrode of the light-emitting device and the other electrode of the first capacitor,

wherein a first data potential is supplied to the other of the source and the drain of the second transistor,

wherein a gate of the third transistor is electrically connected to one of a source and a drain of the fourth transistor and one of a source and a drain of the fifth transistor,

wherein a gate of the fourth transistor is electrically connected to one of a source and a drain of the sixth transistor and one electrode of the second capacitor,

wherein the other of the source and the drain of the fourth transistor is electrically connected to a first wiring supplying a slope signal, and

wherein the other of the source and the drain of the sixth transistor is electrically connected to a second wiring supplying a second data potential.

9 . The display device according to claim 8 , further comprising a seventh transistor,

wherein one of a source and a drain of the seventh transistor is electrically connected to one of the source and the drain of the first transistor.

10 . The display device according to claim 9 ,

wherein each of the first transistor, the second transistor, the third transistor, the fifth transistor, and the sixth transistor is an n-channel transistor, and

wherein the fourth transistor is a p-channel transistor.

11 . The display device according to claim 10 ,

wherein each of the first transistor, the second transistor, the fifth transistor, and the sixth transistor comprises a metal oxide in a channel formation region, and

wherein each of the third transistor and the fourth transistor comprises silicon in a channel formation region.

12 . The display device according to claim 8 ,

wherein each of the second transistor, the fourth transistor, and the sixth transistor is an n-channel transistor, and

wherein each of the first transistor, the third transistor, and the fifth transistor is a p-channel transistor.

13 . The display device according to claim 12 ,

wherein each of the second transistor, the fourth transistor, and the sixth transistor comprises a metal oxide in a channel formation region, and

wherein each of the first transistor, the third transistor, and the fifth transistor comprises silicon in a channel formation region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 16, 2024
From: KAWASHIMA, SUSUMU; KUSUNOKI, KOJI; ATSUMI, TOMOAKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 067116/0753 →
Priority Claims (1)
JP 2021-181059 · Nov 5, 2021 · national
Continuity (1)
Related Publication 20240420626A1 · Dec 19, 2024
References Cited (128)
US 5953985A · Kobayashi · 1999 [cited by applicant]
US 6120338A · Hirano et al. · 2000 [cited by applicant]
US 6909242B2 · Kimura · 2005 [cited by applicant]
US 7583032B2 · Kimura · 2009 [cited by applicant]
US 7915830B2 · Kimura · 2011 [cited by applicant]
US 8378578B2 · Kimura · 2013 [cited by applicant]
US 8604704B2 · Kimura · 2013 [cited by applicant]
US 9437831B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9559316B2 · Yamazaki et al. · 2017 [cited by applicant]
US 9559317B2 · Yamazaki et al. · 2017 [cited by applicant]
US 10312315B2 · Yamazaki et al. · 2019 [cited by applicant]
US 10355067B2 · Yamazaki et al. · 2019 [cited by applicant]
US 10763322B2 · Yamazaki et al. · 2020 [cited by applicant]
US 10854697B2 · Yamazaki et al. · 2020 [cited by applicant]
US 10872947B2 · Yamazaki et al. · 2020 [cited by applicant]
US 10879331B2 · Yamazaki et al. · 2020 [cited by applicant]
US 11004925B2 · Yamazaki et al. · 2021 [cited by applicant]
US 11257423B2 · Liu et al. · 2022 [cited by applicant]
US 11672148B2 · Yamazaki et al. · 2023 [cited by applicant]
US 11823614B2 · Watanabe et al. · 2023 [cited by applicant]
US 12048207B2 · Yamazaki et al. · 2024 [cited by applicant]
US 20020072139A1 · Kashiwabara · 2002 [cited by applicant]
US 20030058687A1 · Kimura · 2003 [cited by applicant]
US 20030103022A1 · Noguchi et al. · 2003 [cited by applicant]
US 20070072439A1 · Akimoto et al. · 2007 [cited by applicant]
US 20110050761A1 · Yoneyama · 2011 [cited by applicant]
US 20110089417A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110101351A1 · Yamazaki · 2011 [cited by applicant]
US 20110122670A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110148290A1 · Oota · 2011 [cited by applicant]
US 20120161220A1 · Yamazaki · 2012 [cited by applicant]
US 20120256204A1 · Yoshizumi et al. · 2012 [cited by applicant]
US 20120273804A1 · Hatano · 2012 [cited by applicant]
US 20120276484A1 · Izumi et al. · 2012 [cited by applicant]
US 20130084531A1 · Hamaguchi et al. · 2013 [cited by applicant]
US 20130084664A1 · Yoshitoku et al. · 2013 [cited by applicant]
US 20130084666A1 · Oshige · 2013 [cited by applicant]
US 20130221356A1 · Yamazaki et al. · 2013 [cited by applicant]
US 20130280839A1 · Sonoda et al. · 2013 [cited by applicant]
US 20130295705A1 · Sonoda et al. · 2013 [cited by applicant]
US 20140004640A1 · Hamaguchi et al. · 2014 [cited by applicant]
US 20140004642A1 · Otsuka et al. · 2014 [cited by applicant]
US 20140367705A1 · Bibl et al. · 2014 [cited by applicant]
US 20150060826A1 · Matsumoto et al. · 2015 [cited by applicant]
US 20150069360A1 · Sato · 2015 [cited by applicant]
US 20150076476A1 · Odaka et al. · 2015 [cited by applicant]
US 20160155423A1 · Shin · 2016 [cited by examiner]
US 20160172595A1 · Malinowski et al. · 2016 [cited by applicant]
US 20160315133A1 · Sato · 2016 [cited by applicant]
US 20170039935A1 · Yang. et al. · 2017 [cited by applicant]
US 20170141167A1 · Naganuma · 2017 [cited by applicant]
US 20170256754A1 · Defranco et al. · 2017 [cited by applicant]
US 20170271338A1 · Yamazaki et al. · 2017 [cited by applicant]
US 20180061915A1 · Yu · 2018 [cited by examiner]
US 20180151125A1 · Lee · 2018 [cited by examiner]
US 20180190908A1 · Ke et al. · 2018 [cited by applicant]
US 20180293929A1 · Shigeta et al. · 2018 [cited by applicant]
US 20180301080A1 · Shigeta et al. · 2018 [cited by applicant]
US 20190051759A1 · Akimoto et al. · 2019 [cited by applicant]
US 20190371231A1 · Kim et al. · 2019 [cited by applicant]
US 20200203662A1 · Mollard et al. · 2020 [cited by applicant]
US 20210065616A1 · Kim et al. · 2021 [cited by applicant]
US 20210158748A1 · Kawae · 2021 [cited by examiner]
US 20210225942A1 · Suzuki et al. · 2021 [cited by applicant]
US 20210234112A1 · Seo et al. · 2021 [cited by applicant]
US 20210296543A1 · Aoyama et al. · 2021 [cited by applicant]
US 20210407380A1 · Liu et al. · 2021 [cited by applicant]
US 20230290301A1 · Watanabe et al. · 2023 [cited by applicant]
CN 001409289A · 2003 [cited by applicant]
CN 001417767A · 2003 [cited by applicant]
CN 102005170A · 2011 [cited by applicant]
CN 108694908A · 2018 [cited by applicant]
CN 108735143A · 2018 [cited by applicant]
CN 110556072A · 2019 [cited by applicant]
CN 112447131A · 2021 [cited by applicant]
CN 112767874A · 2021 [cited by applicant]
EP 1296310A · 2003 [cited by applicant]
EP 2290642A · 2011 [cited by applicant]
EP 3389037A · 2018 [cited by applicant]
EP 3389039A · 2018 [cited by applicant]
JP 2000036385A · 2000 [cited by applicant]
JP 2003059663A · 2003 [cited by applicant]
JP 2003208127A · 2003 [cited by applicant]
JP 2004054203A · 2004 [cited by applicant]
JP 2007096055A · 2007 [cited by applicant]
JP 2007123861A · 2007 [cited by applicant]
JP 2008098106A · 2008 [cited by applicant]
JP 2008147072A · 2008 [cited by applicant]
JP 2008251270A · 2008 [cited by applicant]
JP 2011048101A · 2011 [cited by applicant]
JP 2014120218A · 2014 [cited by applicant]
JP 2014135251A · 2014 [cited by applicant]
JP 2014232568A · 2014 [cited by applicant]
JP 2015115178A · 2015 [cited by applicant]
JP 2016197494A · 2016 [cited by applicant]
JP 2019179696A · 2019 [cited by applicant]
JP 2020160305A · 2020 [cited by applicant]
JP 2021085894A · 2021 [cited by applicant]
KR 20030025873A · 2003 [cited by applicant]
KR 20030038522A · 2003 [cited by applicant]
KR 20180114816A · 2018 [cited by applicant]
KR 20180115615A · 2018 [cited by applicant]
KR 20190136882A · 2019 [cited by applicant]
KR 20210027672A · 2021 [cited by applicant]
TW 201824602 · 2018 [cited by applicant]
WO WO2015083029 · 2015 [cited by applicant]
WO WO2018190503 · 2018 [cited by applicant]
WO WO2018190669 · 2018 [cited by applicant]
WO WO2019220275 · 2019 [cited by applicant]
WO WO2019231073 · 2019 [cited by applicant]
WO WO2020016346 · 2020 [cited by applicant]
WO WO2021082840 · 2021 [cited by applicant]
International Search Report (Application No. PCT/IB2022/060179) Dated Jan. 10, 2023. [cited by applicant]
Written Opinion (Application No. PCT/IB2022/060179) Dated Jan. 10, 2023. [cited by applicant]
Zakhidov.A et al., “Orthogonal processing: A new strategy for organic electronics”, Chem. Sci. (Chemical Science), Apr. 7, 2011, vol. 2, No. 6, pp. 1178-1182. [cited by applicant]
Malinowski.P et al., “High resolution photolithography for direct view active matrix organic light-emitting diode augmented reality displays”, J. Soc. Inf. Display (Journal of the Society for Information Display), Apr. … [cited by applicant]
Malinowski.P et al., “Photolithographic patterning of organic photodetectors with a non-fluorinated photoresist system”, Organic Electronics, Jul. 12, 2014, vol. 15, No. 10, pp. 2355-2359. [cited by applicant]
Malinowski.P et al., “Multicolor 1250 ppi OLED Arrays Patterened by Photolithography”, SID Digest '16 : SID International Symposium Digest of Technical Papers, May 22, 2016, vol. 47, No. 1, pp. 1009-1012. [cited by applicant]
Papadopoulos.N et al., “AMOLED Displays with In-Pixel Photodetector”, Liquid Crystals and Display Technology, Jul. 9, 2020, pp. 1-19. [cited by applicant]
Ke.T et al., “Technology Developments in High-Resolution FMM-free OLED and BEOL IGZO TFTs for Power-Efficient Microdisplays”, SID Digest '21 : SID International Symposium Digest of Technical Papers, May 1, 2021, vol. 52… [cited by applicant]
Malinowski.P et al., “Integration of additional functionalities into the frontplane of AMOLED displays”, SID Digest '20 : SID International Symposium Digest of Technical Papers, Aug. 1, 2020, vol. 51, No. 1, pp. 646-649. [cited by applicant]
Malinowski.P et al., “Organic photolithography for displays with integrated fingerprint scanner”, SID Digest '19 : SID International Symposium Digest of Technical Papers, May 29, 2019, vol. 50, No. 1, pp. 1007-1010. [cited by applicant]
Ke.T et al., “Island and Hole Fabrication on OLED Stack for High-Resolution Sensor in Display Application”, IDW '20 : Proceedings of the 27th International Display Workshops, Dec 9, 2020, vol. 27, pp. 902-905. [cited by applicant]
Gather.M et al., “Solution-Processed Full-Color Polymer-OLED Displays Fabricated by Direct Photolithography”, SID Digest '06 : SID International Symposium Digest of Technical Papers, Jun. 1, 2006, vol. 37, No. 1, pp. 90… [cited by applicant]
Malinowski.P et al., “Photolithography as Enabler of AMOLED Displays Beyond 1000 ppi”, SID Digest '17 : SID International Symposium Digest of Technical Papers, May 1, 2017, vol. 48, No. 1, pp. 623-626. [cited by applicant]
Tamaki.M et al., “LTPS TFT Full Color MicroLED Display with Redundant Pixel Design and Covering Micro-Reflector Array”, SID Digest '21 : SID International Symposium Digest of Technical Papers, May 17, 2021, pp. 29-32. [cited by applicant]
Hong.Y et al., “A Novel Micro-LED Pixel Circuit Using n-type LTPS TFT with Pulse Width Modulation Driving”, SID Digest '21 : SID International Symposium Digest of Technical Papers, May 17, 2021, pp. 868-871. [cited by applicant]
Taiwanese Office Action (Application No. 111139605) Dated Mar. 16, 2026. [cited by applicant]