Solid state image sensor having a grid-patterned inter-pixel isolation section separating the photoelectric conversion sections of each of the pixels from one another and provided with protruding sections
The present technology relates to a solid-state imaging element and electronic equipment that allow an increase in the signal charge amount Qs that each pixel can accumulate. A solid-state imaging element according to the first aspect of the present technology includes: a photoelectric conversion section formed in each pixel; and an inter-pixel separation section separating the photoelectric conversion section of each pixel, in which the inter-pixel separation section includes a protruding section having a shape protruding toward the photoelectric conversion section. The present technology can be applied to a back-illuminated CMOS image sensor, for example.
1. A light detecting device, comprising:
a plurality of pixels;
a photoelectric conversion section included in each of the pixels; and
a grid-patterned inter-pixel separation section separating the photoelectric conversion sections of each of the pixels from one another, wherein, for each of at least a first pixel and a second pixel included in the plurality of pixels, the grid-patterned inter-pixel separation section includes a protruding section in a plan view;
wherein the first pixel includes a first floating diffusion that is configured to accumulate a charge in response to receiving light within a first wavelength range,
wherein the second pixel includes a second floating diffusion that is configured to accumulate a charge in response to receiving light within a second wavelength range,
wherein the first pixel is adjacent to the second pixel in the plan view, and
wherein a position of the protruding section in the first pixel is different from a position of the protruding section in the second pixel in the plan view.
2. The light detecting device according to claim 1 , wherein the protruding section of at least the first pixel includes a first part and a second part at least in the plan view.
3. The light detecting device according to claim 2 , wherein the first part faces the second part in the plan view.
4. The light detecting device according to claim 1 , wherein the grid-patterned inter-pixel separation section includes a deep trench isolation (DTI).
5. The light detecting device according to claim 4 , wherein the grid-patterned inter-pixel separation section is formed in a substrate from a surface side opposite to a light incident surface.
6. The light detecting device according to claim 1 , further comprising:
a region between the grid-patterned inter-pixel separation section and the photoelectric conversion section, the region being different in conductivity type from the photoelectric conversion section.
7. The light detecting device according to claim 6 , wherein the region is disposed along a shape of the protruding section in the plan view.
8. The light detecting device according to claim 1 , wherein the grid-patterned inter-pixel separation section includes a material having a refractive index lower than a refractive index of a material of the photoelectric conversion section.
9. An electronic device, comprising:
a light detecting device, including:
a plurality of pixels;
a photoelectric conversion section included in each of the pixels; and
a grid-patterned inter-pixel separation section separating the photoelectric conversion sections of each of the pixels from one another, wherein, for each of at least a first pixel and a second pixel included in the plurality of pixels, the grid-patterned inter-pixel separation section includes a protruding section in a plan view;
wherein the first pixel includes a first floating diffusion that is configured to accumulate a charge in response to receiving light within a first wavelength range,
wherein the second pixel includes a second floating diffusion that is configured to accumulate a charge in response to receiving light within a second wavelength range,
wherein the first pixel is adjacent to the second pixel in the plan view, and
wherein a position of the protruding section in the first pixel is different from a position of the protruding section in the second pixel in the plan view.
10. The electronic device according to claim 9 , wherein the protruding section of at least the first pixel includes a first part and a second part at least in the plan view.
11. The electronic device according to claim 10 , wherein the first part faces the second part in the plan view.
12. The electronic device according to claim 9 , wherein the grid-patterned inter-pixel separation section includes a deep trench isolation (DTI).
13. The electronic device according to claim 12 , wherein the grid-patterned inter-pixel separation section is formed in a substrate from a surface side opposite to a light incident surface.
14. The electronic device according to claim 9 , further comprising:
a region between the grid-patterned inter-pixel separation section and the photoelectric conversion section, the region being different in conductivity type from the photoelectric conversion section.
15. The electronic device according to claim 14 , wherein the region is disposed along a shape of the protruding section in the plan view.
16. The electronic device according to claim 9 , wherein the grid-patterned inter-pixel separation section includes a material having a refractive index lower than a refractive index of a material of the photoelectric conversion section.