Semiconductor integrated circuit device
A semiconductor integrated circuit device including standard cells including fin transistors includes, at a cell row end, a cell-row-terminating cell that does not contribute to a logical function of a circuit block. The cell-row-terminating cell includes a plurality of fins extending in an X direction. Ends of the plurality of fins on the inner side of the circuit block are near a gate structure placed at a cell end and do not overlap with the gate structure in a plan view, and ends of the plurality of fins on an outer side of the circuit block overlap with any one of a gate structure in a plan view.
1. A semiconductor integrated circuit device comprising
a circuit block including a first cell row having a plurality of cells arranged in a first direction, wherein
the first cell row includes:
a first cell-row-terminating cell that does not contribute to a logical function of the circuit block disposed at a first end of the first cell row, and
a first cell that is adjacent to the first cell-row terminating cell in the first direction; and
the first cell-row-terminating cell includes:
a first nanowire extending in the first direction in a first P-type transistor area,
a first pad connected to the first nanowire,
a second nanowire extending in the first direction in a first N-type transistor area,
a second pad connected to the second nanowire, and
a plurality of gate structures extending in a second direction perpendicular to the first direction, including a first gate structure placed at a cell end on an inner side of the circuit block, and a second gate structure adjacent to the first gate structure in the first direction; and
the first cell includes:
a third nanowire extending in the first direction in the first P-type transistor area,
a third pad connected to the third nanowire and facing the first pad,
a fourth nanowire extending in the first direction in the first N-type transistor area,
a fourth pad connected to the fourth nanowire and facing the second pad,
a third gate structure adjacent to the first gate structure in the first direction.
2. The semiconductor integrated circuit device of claim 1 , wherein
the first pad is located between the first gate structure and the second gate structure, and
the third pad is located between the first gate structure and the third gate structure.
3. The semiconductor integrated circuit device of claim 1 , wherein
an end of the first pad on the inner side of the circuit block does not overlap with the first gate structure in a plan view.
4. The semiconductor integrated circuit device of claim 3 , wherein
an end of the third pad on the outer side of the circuit block does not overlap with the first gate structure in a plan view.
5. The semiconductor integrated circuit device of claim 1 , wherein
the first cell contributes to the logical function of the circuit block.
6. The semiconductor integrated circuit device of claim 1 , wherein
the third, first and second gate structures are arranged at a uniform pitch.
7. The semiconductor integrated circuit device of claim 1 , wherein
the first gate structure is a dummy gate.
8. The semiconductor integrated circuit device of claim 1 , wherein
the first cell-row-terminating cell further includes a fourth gate structure placed at a cell end on an outer side of the circuit block.
9. The semiconductor integrated circuit device of claim 8 , wherein
the fourth gate structure is a dummy gate.
10. The semiconductor integrated circuit device of claim 1 ,
the circuit block further including a second cell row having a plurality of cells arranged in the first direction, wherein
the second cell row includes:
a second cell-row-terminating cell that does not contribute to a logical function of the circuit block disposed at a second end of the second cell row, the first end of the first cell row and the second end of the second cell row being at the same position in the first direction, and
a second cell that is adjacent to the second cell-row terminating cell in the first direction; and
the second cell-row-terminating cell includes:
a fifth nanowire extending in the first direction in a second P-type transistor area,
a fifth pad connected to the fifth nanowire,
a sixth nanowire extending in the first direction in a second N-type transistor area,
a sixth pad connected to the sixth nanowire, and
a plurality of gate structures extending in the second direction, including a fifth gate structure placed at a cell end on an inner side of the circuit block, and a sixth gate structure adjacent to the fifth gate structure in the first direction; and
the second cell includes:
a seventh nanowire extending in the first direction in the second P-type transistor area,
a seventh pad connected to the seventh nanowire and facing the fifth pad,
an eighth nanowire extending in the first direction in the second N-type transistor area,
an eighth pad connected to the eighth nanowire and facing the sixth pad,
a seventh gate structure adjacent to the fifth gate structure in the first direction.
11. The semiconductor integrated circuit device of claim 10 , wherein
the first pad is located between the first gate structure and the second gate structure,
the third pad is located between the first gate structure and the third gate structure,
the fifth pad is located between the fifth gate structure and the sixth gate structure, and
the seventh pad is located between the fifth gate structure and the seventh gate structure.
12. The semiconductor integrated circuit device of claim 10 , wherein
an end of the first pad on the inner side of the circuit block does not overlap with the first gate structure in a plan view, and
an end of the fifth pad on the inner side of the circuit block does not overlap with the fifth gate structure in a plan view.
13. The semiconductor integrated circuit device of claim 12 , wherein
an end of the third pad on the outer side of the circuit block does not overlap with the first gate structure in a plan view, and
an end of the seventh pad on the outer side of the circuit block does not overlap with the fifth gate structure in a plan view.
14. The semiconductor integrated circuit device of claim 10 , wherein
the first and second cells contribute to the logical function of the circuit block.
15. The semiconductor integrated circuit device of claim 10 , wherein
the third, first and second gate structures are arranged at a uniform pitch, and
the seventh, fifth and sixth gate structures are arranged at a uniform pitch.
16. The semiconductor integrated circuit device of claim 10 , wherein
the first and fifth gate structures are dummy gates.
17. The semiconductor integrated circuit device of claim 10 , wherein
the first cell-row-terminating cell further includes a fourth gate structure placed at a cell end on an outer side of the circuit block, and
the second cell-row-terminating cell further includes an eighth gate structure placed at a cell end on an outer side of the circuit block.
18. The semiconductor integrated circuit device of claim 17 , wherein
the fourth and eighth gate structures are dummy gates.
19. The semiconductor integrated circuit device of claim 10 , wherein
the first and second cell-row-terminating cells have cell width different from each other, the cell width being a cell dimension in the first direction.