High-density low voltage ferroelectric differential memory bit-cell with shared plate- line
Described is a low power, high-density non-volatile differential memory bit-cell. The transistors of the differential memory bit-cell can be planar or non-planer and can be fabricated in the frontend or backend of a die. A bit-cell of the non-volatile differential memory bit-cell comprises first transistor first non-volatile structure that are controlled to store data of a first value. Another bit-cell of the non-volatile differential memory bit-cell comprises second transistor and second non-volatile structure that are controlled to store data of a second value, wherein the first value is an inverse of the second value. The first and second volatile structures comprise ferroelectric material (e.g., perovskite, hexagonal ferroelectric, improper ferroelectric).
1. A system comprising:
a processor circuitry; and
a non-volatile memory coupled to the processor circuitry, wherein the non-volatile memory includes differential bit-cells, wherein one of the differential bit-cells includes: two bit-cells with a first bit-line (BL), a second bit-line (BLB), a word-line (WL), and a shared plate-line (PL), which is shared between the two bit-cells, wherein each of the two bit-cells includes a corresponding non-volatile structure, which includes:
a ferroelectric material;
a first layer;
a second layer or a fourth layer comprising a first conductive oxide or second conductive oxide, respectively;
a third layer comprising the ferroelectric material;
a fifth layer;
a sixth layer adjacent to a first side of the first layer, the second layer, the third layer, the fourth layer, and the fifth layer; and
a seventh layer adjacent to a second side of the first layer, the second layer, the third layer, the fourth layer, and the fifth layer,
wherein the sixth layer and the seventh layer comprise a barrier material having a first lattice parameter substantially matching with a second lattice parameter of the first conductive oxide, the second conductive oxide, or the ferroelectric material.
2. The system of claim 1 , wherein the corresponding non-volatile structure can switch its state by a voltage around 100 mV.
3. The system of claim 1 , wherein the differential bit-cells are configured to compensate for asymmetry in the corresponding non-volatile structure.
4. The system of claim 1 , wherein:
the first layer comprises a first refractive inter-metallic material, wherein the first layer is adjacent to a drain or source of a transistor of one of the two bit-cells;
the second layer is adjacent to the first layer, and the third layer is adjacent to the second layer;
the fourth layer is adjacent to the third layer; and
the fifth layer comprises a second refractive inter-metallic material, wherein the fifth layer is adjacent to the shared PL and adjacent to the fourth layer.
5. The system of claim 4 , wherein:
the barrier material includes one or more of an oxide of: Ti, Al, or Mg;
the first or second refractive inter-metallic materials includes one or more of: Ti, Al, Ta, W, Co, Ni, Ga, Mn, B, C, N, or Fe; and
the first or second conductive oxides include oxides of one or more of: In 2 O 3 , Fe 2 O 3 , Fe 3 O 4 ; PtCoO 3 , PdCoO 2 , Al doped ZnO, or Sn doped In 2 O 3 .
6. The system of claim 1 , wherein the first lattice parameter substantially matches with the second lattice parameter of the first or second conductive oxide.
7. The system of claim 1 , wherein the first lattice parameter substantially matches with the second lattice parameter of the ferroelectric material.
8. The system of claim 4 , wherein the barrier material is adjacent to the first refractive inter-metallic material, wherein the barrier material includes one or more of an oxide of: Ti, Al, or Mg.
9. The system of claim 1 , wherein the differential bit-cells are organized in rows and columns.
10. The system of claim 1 , wherein the processor circuitry includes an address decoder, sense amplifier, and write driver.
11. The system of claim 1 , wherein the ferroelectric material includes one of:
a first perovskite material of a type ABO 3 , where ‘A’ and ‘B’ are two cations of different sizes, and ‘O’ is oxygen, which is an anion that bonds to the two cations;
a second perovskite material including one or more of: La, Sr, Co, Sr, Ru, Y, Ba, Cu, Bi, Ca, or Ni;
a third perovskite material including one or more of: (La,Sr)CoO 3 , SrRuO 3 , (La,Sr)MnO 3 , YBa 2 Cu 3 O 7 , Bi 2 Sr 2 CaCu 2 O 8 , or LaNiO 3 ; or
a hexagonal ferroelectric of a type h-RMnO 3 , where R is a rare earth element including one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium (Y).
12. A method for forming a differential bit-cell, the method comprising:
forming a differential bit-cell having a first bit-cell and a second bit-cell;
coupling the first bit-cell to a first bit-line,
coupling the second bit-cell to a second bit-line;
coupling the first bit-cell and the second bit-cell to a word-line;
coupling the first bit-cell and the second bit-cell to a plate-line which is shared between the first bit-cell and the second bit-cell;
forming a first ferroelectric structure coupled to a first transistor of the first bit-cell, and further coupled to the plate-line; and
forming a second ferroelectric structure coupled to a second transistor of the second bit-cell, and further coupled to the plate-line, wherein the first and second ferroelectric structures comprises:
a ferroelectric material;
a first layer;
a second layer or a fourth layer comprising a first conductive oxide or second conductive oxide, respectively;
a third layer comprising the ferroelectric material;
a fifth layer;
a sixth layer adjacent to a first side of the first layer, the second layer, the third layer, the fourth layer, and the fifth layer; and
a seventh layer adjacent to a second side of the first layer, the second layer, the third layer, the fourth layer, and the fifth layer,
wherein the sixth and the seventh layers comprise a barrier material having a first lattice parameter substantially matching with a second lattice parameter of the first conductive oxide, the second conductive oxide, or the ferroelectric material.
13. The method of claim 12 , wherein forming the differential bit-cell comprises:
fabricating the first transistor having a gate terminal coupled to word-line;
coupling one of a source or drain terminal of the first transistor to the first bit-line;
fabricating the second transistor having a gate terminal coupled to the word-line; and
coupling one of a source terminal or a drain terminal of the second transistor to the second bit-line, wherein the second bit-line is to provide a signal which is an inverse of a signal on the first bit-line.
14. The method of claim 13 , wherein:
the first layer comprising a first refractive inter-metallic material, wherein the first layer is adjacent to the drain or source of the first transistor;
the second layer is adjacent to the first layer, and the third layer is adjacent to the second layer;
the fourth layer is adjacent to the third layer; and
the fifth layer comprises a second refractive inter-metallic material, wherein the fifth layer is adjacent to the plate-line and adjacent to the fourth layer.
15. The method of claim 14 , wherein:
the barrier material includes one or more of an oxide of: Ti, Al, or Mg;
the first refractive inner-metallic material or the second refractive inter-metallic material includes one or more of: Ti, Al, Ta, W, Co, Ni, Ga, Mn, B, C, N, or Fe; and
the first or second conductive oxides include oxides of one or more of: In 2 O 3 , Fe 2 O 3 , Fe 3 O 4 ; PtCoO 3 , PdCoO 2 , Al doped ZnO, or Sn doped In 2 O 3.
16. The method of claim 12 , wherein the ferroelectric material includes one of:
a first perovskite material of a type ABO 3 , where ‘A’ and ‘B’ are two cations of different sizes, and ‘O’ is oxygen, which is an anion that bonds to the two cations;
a second perovskite material including one or more of: La, Sr, Co, Sr, Ru, Y, Ba, Cu, Bi, Ca, or Ni;
a third perovskite material including one or more of: (La,Sr)CoO 3 , SrRuO 3 , (La,Sr)MnO 3 , YBa 2 Cu 3 O 7 , Bi 2 Sr 2 CaCu 2 O 8 , or LaNiO 3 ; or
a hexagonal ferroelectric of a type h-RMnO3, where R is a rare earth element including one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr),
promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium (Y).
17. An apparatus comprises:
a first bit-cell comprising a first ferroelectric capacitor and a first transistor controllable by a word-line, wherein the first transistor is coupled to a first bit-line and a plate-line; and
a second bit-cell comprising a second ferroelectric capacitor and a second transistor controllable by the word-line, wherein the first transistor is coupled to a second bit-line and the plate-line, wherein the plate-line is shared between the first bit-cell and the second bit-cell, wherein the first bit-line is to carry a first signal, wherein the second bit-line is to carry a second signal, wherein the second signal is an inverse of the first signal, and wherein the first ferroelectric capacitor or the second ferroelectric capacitor comprises:
a first layer;
a second layer or a fourth layer comprising a first conductive oxide or second conductive oxide, respectively;
a third layer comprising a ferroelectric material;
a fifth layer;
a sixth layer adjacent to a first side of the first layer, the second layer, the third layer, the fourth layer, and the fifth layer; and
a seventh layer adjacent to a second side of the first layer, the second layer, the third layer, the fourth layer, and the fifth layer,
wherein the sixth and the seventh layers comprise a barrier material having a first lattice parameter substantially matching with a second lattice parameter of the first conductive oxide, the second conductive oxide, or the ferroelectric material.
18. The apparatus of claim 17 , wherein:
the first layer comprising a first refractive inter-metallic material, wherein the first layer is adjacent to a drain or source of the first transistor;
the second layer is adjacent to the first layer, and the third layer is adjacent to the second layer;
the fourth layer is adjacent to the third layer; and
the fifth layer comprises a second refractive inter-metallic material, wherein the fifth layer is adjacent to the plate-line and adjacent to the fourth layer.
19. The apparatus of claim 17 , wherein the first bit-cell and the second bit-cell are configured to compensate for asymmetry in the first ferroelectric capacitor and the second ferroelectric capacitor.