Semiconductor device
Disclosed is a semiconductor device includes a substrate provided with a plurality of pixel electrodes and a control electrode, a functional layer provided over the plurality of pixel electrodes, a transparent electrode provided over the functional layer, an insulating layer provided so as to cover an upper surface and a side surface of a laminate including the functional layer and the transparent electrode and having a first opening reaching the transparent electrode, and a light-shielding conductive layer connected to the transparent electrode via the first opening and constituting at least a part of an electrical path connecting the transparent electrode and the control electrode.
1. A semiconductor device, comprising:
a substrate provided with a plurality of pixel electrodes and a control electrode;
a functional layer provided over the plurality of pixel electrodes;
a transparent electrode provided over the functional layer;
an insulating layer provided so as to cover an upper surface and a side surface of a laminate including the functional layer and the transparent electrode, and having a first opening reaching the transparent electrode;
a light-shielding conductive layer provided so as to cover the side surface of the laminate with the insulating layer interposed therebetween, and
a microlens layer provided over the transparent electrode and including a plurality of microlenses, wherein
the light-shielding layer is electrically connected to the transparent electrode through the first opening and is at least a part of a path electrically connecting the transparent electrode and the control electrode, and
at least a part of the plurality of pixel electrodes, at least a part of the light-shielding conductive layer and at least a part of the plurality of microlenses overlap in a plan view.
2. The semiconductor device according to claim 1 , wherein the insulating layer comprises a second opening extending over the control electrode and reaching the control electrode, and
the light-shielding conductive layer is electrically connected to the control electrode through the second opening.
3. A semiconductor device, comprising:
a substrate provided with a plurality of pixel electrodes and a control electrode;
a functional layer provided over the plurality of pixel electrodes;
a first transparent electrode provided over the functional layer;
an insulating layer provided over the first transparent electrode; and
a light-shielding conductive layer provided to cover a part of an upper surface and a side surface of a laminate including the functional layer, the first transparent electrode and the insulating layer; and
a microlens layer provided over the first transparent electrode and including a plurality of microlenses;
the light-shielding conductive layer having a first portion positioned on a side of the upper surface of the laminate and a second portion positioned on a side of the side surface of the laminate; and
the first transparent electrode being positioned between the first portion of the light-shielding conductive layer and the functional layer, wherein
a distance A between the first portion of the light-shielding conductive layer and the first transparent electrode and a distance B between the second portion of the light-shielding conductive layer and the functional layer are both smaller than a distance C between the first portion of the light-shielding conductive layer and the functional layer,
the first transparent electrode and the control electrode are electrically connected via the light-shielding conductive layer,
the light-shielding conductive layer comprises a first light-shielding conductive layer and a second light-shielding conductive layer, and the control electrode comprises a first control electrode and a second control electrode,
the first transparent electrode is connected to the first control electrode via the first light-shielding conductive layer, and is connected to the second control electrode via the second light-shielding conductive layer, and
at least a part of the plurality of pixel electrodes, at least a part of the light-shielding conductive layer and at least a part of the plurality of microlenses overlap in a plan view.
4. The semiconductor device according to claim 3 , wherein the first portion of the light-shielding conductive layer contacts the first transparent electrode.
5. The semiconductor device according to claim 3 , wherein the second portion of the light-shielding conductive layer contacts the functional layer.
6. The semiconductor device according to claim 3 , wherein the insulating layer is provided so as to cover a portion opposing to the plurality of pixel electrodes with the functional layer interposed therebetween.
7. The semiconductor device according to claim 3 , further comprising a second transparent electrode provided over the light-shielding conductive layer; and
a second insulating layer provided over the second transparent electrode, wherein
the second transparent electrode is connected to the control electrode, and
the first transparent electrode and the control electrode are electrically connected via the light-shielding conductive layer and the second transparent electrode.
8. The semiconductor device according to claim 3 , wherein a side surface of the functional layer is oxidized.
9. The semiconductor device according to claim 3 , wherein the insulating layer has a first opening reaching the first transparent electrode, and
the light-shielding conductive layer and the first transparent electrode are electrically connected through the first opening.
10. The semiconductor device according to claim 1 , wherein a connection region comprising the first opening is arranged to surround a pixel region comprising the plurality of pixel electrodes.
11. The semiconductor device according to claim 1 , wherein the first opening comprises a plurality of openings.
12. The semiconductor device according to claim 11 , wherein a total area of the plurality of openings is not more than 10% of an area of a pixel region in which the plurality of pixel electrodes is provided.
13. The semiconductor device according to claim 11 , wherein each of the plurality of openings has a maximum width of not more than 250 μm.
14. The semiconductor device according to claim 11 , wherein the plurality of openings is provided so as to surround a pixel region comprising provided with the plurality of pixel electrodes.
15. The semiconductor device according to claim 1 , wherein a work function of a material forming the light-shielding conductive layer is larger than a work function of a material forming the functional layer.
16. The semiconductor device according to claim 1 , further comprising a color filter layer and a microlens layer oriented provided over the transparent electrode.
17. The semiconductor device according to claim 1 , wherein the functional layer comprises nanoparticles, said nanoparticles comprising at least one semiconductor material selected from the group consisting of PbS, PbSe, PbTe, InN, InAs, InP, InSb, InGaAs, CdS, CdSe, CdTe, Ge, CuInS, CuInSe, CuInGaSe and Si.
18. The semiconductor device according to claim 1 , wherein the light-shielding conductive layer comprises a metal or a metal alloy.
19. An imaging system, comprising:
the semiconductor device according to claim 1 ; and
a signal processing unit configured to process a signal output from the semiconductor device.
20. A movable object, comprising:
the semiconductor device according to claim 1 ;
a distance information acquiring unit configured to acquire distance information to an object from a parallax image based on a signal output from the semiconductor device; and
a control unit configured to control the movable object based on the distance information.
21. The semiconductor device according to claim 1 , wherein the light-shielding conductive layer comprises a first light-shielding conductive layer and a second light-shielding conductive layer, and the control electrode comprises a first control electrode and a second control electrode, and
the first transparent electrode is connected to the first control electrode via the first light-shielding conductive layer, and is connected to the second control electrode via the second light-shielding conductive layer.
22. The semiconductor device according to claim 1 , wherein the light-shielding conductive layer is configured to shield an incident light to the functional layer.
23. The semiconductor device according to claim 3 , wherein the light-shielding conductive layer is configured to shield an incident light to the functional layer.