Substrate processing apparatus, elevator and method of manufacturing semiconductor device
A technique for improving uniformity of film thickness on substrates, includes a substrate processing apparatus having a substrate retainer including substrate and partition plate supports; a reaction tube; a first driver vertically moving the substrate retainer into or out of the reaction tube; a second driver vertically moved by the first driver and rotating the substrate retainer to change a distance between a substrate and a partition plate by moving at least one of the substrate or the partition plate support; a heater; a gas supplier comprising a nozzle; a gas exhauster; and a controller controlling the first driver, the second driver and the gas supplier such that a gas is supplied to the substrate while changing at least one of a relative position of the substrate and a relative position of the partition plate with respect to a hole of the nozzle by driving the second driver.
1. A substrate processing apparatus comprising:
a substrate retainer comprising:
a substrate support configured to support a plurality of substrates at intervals in a vertical direction; and
a partition plate support configured to support a plurality of partition plates arranged between the plurality of substrates supported by the substrate support;
a reaction tube configured to accommodate the substrate retainer in which the plurality of substrates are supported by the substrate support;
a first driver configured to move the substrate retainer in the vertical direction to transfer the substrate retainer into or out of the reaction tube;
a second driver moved by the first driver in the vertical direction together with the substrate retainer, and configured to rotate the substrate retainer in a state where the substrate retainer is inserted in the reaction tube and to change a distance between each of the plurality of substrates supported by the substrate support and each of the plurality of partition plates supported by the partition plate support by moving at least one of the substrate support and the partition plate support in the vertical direction;
a heater provided around the reaction tube and configured to heat the plurality of substrates;
a gas supplier comprising a nozzle provided with a hole through which a gas is supplied to the plurality of substrates supported by the substrate support accommodated in the reaction tube;
an exhauster through which the gas supplied through the gas supplier is exhausted out of the reaction tube; and
a controller configured to be capable of controlling the first driver, the second driver and the gas supplier such that the gas is supplied to the plurality of substrates while changing at least one of a relative position of each of the plurality of substrates and a relative position of each of the plurality of partition plates with respect to the hole by driving the second driver in a state where the substrate retainer is inserted in the reaction tube by the first driver,
wherein the second driver comprises:
a rotational driver configured to rotate the substrate support and the partition plate support;
a substrate support vertical driver configured to move the substrate support in the vertical direction with respect to the partition plate support; and
a partition plate support vertical driver configured to move the partition plate support in the vertical direction with respect to the substrate support.
2. The substrate processing apparatus of claim 1 , wherein
a height of each of the plurality of substrates with respect to the hole is changed by the substrate support vertical driver.
3. The substrate processing apparatus of claim 1 , wherein
a height of the partition plate support with respect to the hole is changed by the partition plate support vertical driver.
4. The substrate processing apparatus of claim 1 , wherein the substrate support and the partition plate support are connected by a vacuum bellows.
5. The substrate processing apparatus of claim 4 , wherein the second driver is disposed under an atmospheric pressure.
6. The substrate processing apparatus of claim 5 , further comprising
a storage chamber configured to accommodate the second driver and the substrate retainer lowered by the first driver from the reaction tube.
7. The substrate processing apparatus of claim 6 , wherein the storage chamber is further configured to accommodate the first driver.
8. The substrate processing apparatus of claim 6 , wherein an inside of the storage chamber is hermetically sealed with respect to an outside of the storage chamber,
wherein the second driver is provided inside the storage chamber while accommodated in a container at the atmospheric pressure hermetically sealed with respect to the storage chamber, and
wherein the second driver is moved in the vertical direction by the first driver provided outside the storage chamber.
9. An elevator comprising:
a first driver configured to move a substrate retainer in a vertical direction to transfer the substrate retainer into or out of a reaction tube, wherein the substrate retainer comprises:
a substrate support configured to support a plurality of substrates at intervals in the vertical direction; and
a partition plate support configured to support a plurality of partition plates arranged between the plurality of substrates supported by the substrate support; and
a second driver moved by the first driver in the vertical direction together with the substrate retainer, and configured to rotate the substrate retainer in a state where the substrate retainer is inserted in the reaction tube and to change relative positions of the substrate retainer and the partition plate support in the vertical direction,
wherein the second driver comprises:
a rotational driver configured to rotate the substrate support and the partition plate support;
a substrate support vertical driver configured to move the substrate support in the vertical direction with respect to the partition plate support; and
a partition plate support vertical driver configured to move the partition plate support in the vertical direction with respect to the substrate support.
10. A method of manufacturing a semiconductor device, comprising:
(a) accommodating a substrate retainer into a reaction tube by moving the substrate retainer by a first driver, wherein the substrate retainer comprises:
a substrate support configured to support a plurality of substrates at intervals in a vertical direction; and
a partition plate support configured to support a plurality of partition plates arranged between the plurality of substrates supported by the substrate support;
(b) heating the plurality of substrates by a heater provided around the reaction tube;
(c) supplying a gas to the plurality of substrates through a plurality of gas supply holes provided at a gas supply nozzle; and
(d) exhausting the gas,
wherein the second driver comprises:
a rotational driver configured to rotate the substrate support and the partition plate support;
a substrate support vertical driver configured to move the substrate support in the vertical direction with respect to the partition plate support; and
a partition plate support vertical driver configured to move the partition plate support in the vertical direction with respect to the substrate support, and
wherein, in (c), at least one of a height of each of the plurality of substrates and a height of each of the plurality of partition plates with respect to each of the plurality of gas supply holes is adjusted by a second driver.
11. The method of claim 10 , wherein
the height of each of the plurality of substrates with respect to each of the plurality of gas supply holes is changed by the substrate support vertical driver.
12. The method of claim 10 , wherein
the height of each of the plurality of partition plates with respect to each of the plurality of gas supply holes is changed by the partition plate support vertical driver.
13. The method of claim 10 , wherein
the height of each of the plurality of substrates with respect to each of the plurality of gas supply holes is changed by the substrate support vertical driver, and the height of each of the plurality of partition plates with respect to each of the plurality of gas supply holes is changed by the partition plate support vertical driver.