IP Library › Granted Patent US 12,308,150
Granted Patent B2
US 12,308,150 · App. 17/137,961 · Granted May 20, 2025

Coil electronic component and method of manufacturing the same

Inventors: Woon Chul Choi (Suwon-si, KR); Jung Hyuk Jung (Suwon-si, KR); Woo Jin Lee (Suwon-si, KR); Han Wool Ryu (Suwon-si, KR)
Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
H01F17/0013H01F17/04H01F27/292H01F41/046H01F2017/048
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,308,150
App. No.
17/137,961
Granted
May 20, 2025
Kind
B2
Abstract

A coil electronic component includes a magnetic body that includes a substrate and a coil part. The coil part includes patterned insulating films disposed on a surface of the substrate and a plating layer formed between the patterned insulating films by plating and having a thickness greater than or equal to its width measured parallel to the surface of the substrate. The plating layer may be formed in a single plating operation, and may have a thickness of 200 μm or more.

Claims (23)

1. A coil electronic component comprising:

a magnetic body,

wherein the magnetic body includes:

a substrate,

a coil part including a patterned insulating film disposed on a surface of the substrate, a base conductor layer disposed on the substrate between portions of the patterned insulating film and contacting the patterned insulating film, and a plating layer disposed on the base conductor layer between the portions of the patterned insulating film and having a thickness greater than or equal to its width measured parallel to the surface of the substrate, and

a cover insulating layer disposed on the patterned insulating film and the plating layer in a stacking direction, and formed of a material different from that of the patterned insulating film,

wherein the patterned insulating film has an aspect ratio which is greater than an aspect ratio of the plating layer, and

wherein an outermost portion of the patterned insulating film is spaced apart from external surfaces of the magnetic body opposing each other in a direction perpendicular to the stacking direction.

2. The coil electronic component of claim 1 , wherein the plating layer is formed of a single plating layer.

3. The coil electronic component of claim 1 , wherein the plating layer has a thickness Tp of 200 μm or more measured orthogonally to the surface of the substrate having the coil part thereon, and a cross section of the plating layer has an aspect ratio Tp/Wp of 1.0 or more relative to the width Wp of the cross section.

4. The coil electronic component of claim 1 , wherein the patterned insulating film has a width of 1 μm to 20 μm between adjacent windings of the plating layer of the coil part.

5. The coil electronic component of claim 1 , wherein the plating layer has a rectangular cross-section, an anisotropic plating layer is further disposed on the plating layer, and the cover insulating layer is disposed on the patterned insulating film and the anisotropic plating layer.

6. The coil electronic component of claim 1 , wherein the patterned insulating film and the plating layer extend to a same thickness measured from the surface of the substrate.

7. The coil electronic component of claim 1 , wherein the patterned insulating film has a thickness measured from the surface of the substrate that is equal to or larger than a spacing between adjacent windings of the coil part.

8. The coil electronic component of claim 7 , wherein the patterned insulating film has an aspect ratio Tp/Wi of 10 or more, wherein Tp is the thickness of the patterned insulating film measured from the surface of the substrate and Wi is a width of the patterned insulating film measured parallel to the surface of the substrate.

9. The coil electronic component of claim 8 , wherein the thickness Tp of the patterned insulating film is 200 μm or more and the width Wi of the patterned insulating film is 1 μm to 20 μm.

10. The coil electronic component of claim 7 , wherein the plating layer has a thickness Tp of 200 μm or more in a single plating layer.

11. The coil electronic component of claim 7 , further comprising:

a conductive via penetrating through the substrate and electrically interconnecting plating layers formed on each of two opposing surfaces of the substrate.

12. The coil electronic component of claim 1 , wherein the patterned insulating film is disposed directly on the surface of the substrate, and the base conductor layer is disposed directly on the surface of the substrate between the portions of the patterned insulating film and contacts the patterned insulating film.

13. The coil electronic component of claim 12 , wherein the plating layer is spaced apart from the surface of the substrate.

14. The coil electronic component of claim 1 , wherein the base conductor layer directly contacts each of two opposing surfaces of the substrate.

15. The coil electronic component of claim 1 , wherein the cover insulating layer is arranged entirely outside of a space defined between the portions of the patterned insulating film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 20, 2021
From: CHOI, WOON CHUL; JUNG, JUNG HYUK; LEE, WOO JIN; RYU, HAN WOOL
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 056296/0262 →
Priority Claims (1)
KR 10-2015-0108683 · Jul 31, 2015 · national
Continuity (2)
Continuation 15146470 · May 4, 2016
Related Publication 20210125766A1 · Apr 29, 2021
References Cited (99)
US 5729887A · Irie · 1998 [cited by applicant]
US 5779813A · Plunkett · 1998 [cited by applicant]
US 5801100A · Lee · 1998 [cited by applicant]
US 6030877A · Lee et al. · 2000 [cited by applicant]
US 6204997B1 · Sasaki · 2001 [cited by examiner]
US 6466401B1 · Hong · 2002 [cited by examiner]
US 6600404B1 · Kajino · 2003 [cited by applicant]
US 6901653B2 · Hsiao · 2005 [cited by applicant]
US 6940395B2 · Steinmark · 2005 [cited by applicant]
US 7216419B2 · Kusano · 2007 [cited by applicant]
US 7221250B2 · Yoshida · 2007 [cited by applicant]
US 7633710B2 · Lee · 2009 [cited by examiner]
US 7870665B2 · Nomura · 2011 [cited by applicant]
US 9437363B2 · Choi et al. · 2016 [cited by applicant]
US 9595384B2 · Nakamura · 2017 [cited by examiner]
US 9899141B2 · Lee · 2018 [cited by applicant]
US 9899143B2 · Kim · 2018 [cited by examiner]
US 10515752B2 · Choi · 2019 [cited by examiner]
US 10930425B2 · Kim · 2021 [cited by examiner]
US 11107616B2 · Choi · 2021 [cited by examiner]
US 20040217440A1 · Ng · 2004 [cited by applicant]
US 20040240106A1 · Iitsuka · 2004 [cited by examiner]
US 20060001519A1 · Kusano · 2006 [cited by applicant]
US 20060152321A1 · Jung · 2006 [cited by examiner]
US 20080002289A1 · Lee · 2008 [cited by applicant]
US 20080100409A1 · Nishikawa · 2008 [cited by applicant]
US 20090243781A1 · Nomura · 2009 [cited by applicant]
US 20100157565A1 · Yoshida · 2010 [cited by applicant]
US 20130222101A1 · Ito · 2013 [cited by applicant]
US 20130249662A1 · Tonoyama · 2013 [cited by examiner]
US 20140009254A1 · Ohkubo · 2014 [cited by applicant]
US 20140184374A1 · Park · 2014 [cited by examiner]
US 20140247101A1 · Cha et al. · 2014 [cited by applicant]
US 20140292469A1 · Cha et al. · 2014 [cited by applicant]
US 20150028984A1 · Kang · 2015 [cited by applicant]
US 20150035634A1 · Nakamura · 2015 [cited by examiner]
US 20150035640A1 · Wang · 2015 [cited by examiner]
US 20150048918A1 · Park · 2015 [cited by applicant]
US 20150091688A1 · Jung · 2015 [cited by applicant]
US 20150102889A1 · Choi et al. · 2015 [cited by applicant]
US 20150109088A1 · Kim et al. · 2015 [cited by applicant]
US 20150123757A1 · Choi · 2015 [cited by applicant]
US 20150255208A1 · Kim · 2015 [cited by applicant]
US 20150270053A1 · Cha · 2015 [cited by applicant]
US 20150270055A1 · Nakamura · 2015 [cited by applicant]
US 20160071643A1 · Heo · 2016 [cited by applicant]
US 20160111193A1 · Jeong · 2016 [cited by applicant]
US 20160163444A1 · Choi · 2016 [cited by applicant]
US 20160343500A1 · Jung · 2016 [cited by applicant]
US 20180054800A1 · Yeo · 2018 [cited by examiner]
US 20180114619A1 · Kim · 2018 [cited by examiner]
US 20190103215A1 · Jung · 2019 [cited by applicant]
US 20190180928A1 · Lee · 2019 [cited by applicant]
US 20190189336A1 · Kim · 2019 [cited by applicant]
US 20190189338A1 · Kim · 2019 [cited by applicant]
US 20200373061A1 · Asai · 2020 [cited by examiner]
US 20200373064A1 · Asai · 2020 [cited by examiner]
CN 104575935A · 2015 [cited by applicant]
CN 104575937A · 2015 [cited by applicant]
CN 104733155A · 2015 [cited by applicant]
CN 104766715A · 2015 [cited by applicant]
JP 10241983A · 1998 [cited by applicant]
JP 2000182873A · 2000 [cited by applicant]
JP 2006278479A · 2006 [cited by applicant]
JP 2006332147A · 2006 [cited by applicant]
JP 2008166455A · 2008 [cited by applicant]
JP 2008166476A · 2008 [cited by examiner]
JP 2008277564A · 2008 [cited by examiner]
JP 2009111036A · 2009 [cited by examiner]
JP 2012178509A · 2012 [cited by examiner]
JP 2014170924A · 2014 [cited by applicant]
JP 2014192523A · 2014 [cited by applicant]
JP 2015032625A · 2015 [cited by applicant]
JP 2015130471A · 2015 [cited by applicant]
JP 2016103591A · 2016 [cited by examiner]
JP 201717142A · 2017 [cited by applicant]
JP 6962640B2 · 2021 [cited by examiner]
KR 101462806B1 · 2014 [cited by applicant]
KR 1020150071266A · 2015 [cited by applicant]
KR 101532172B1 · 2015 [cited by applicant]
KR 20150071266A · 2015 [cited by examiner]
KR 1020150080737A · 2015 [cited by applicant]
KR 101565700B1 · 2015 [cited by examiner]
KR 20170133140A · 2017 [cited by examiner]
KR 101862503B1 · 2018 [cited by examiner]
KR 2021133162A · 2021 [cited by examiner]
Office Action issued in corresponding Chinese Patent Application No. 201610388335.4, dated Sep. 4, 2017 (English translation). [cited by applicant]
First Office Action issued in Chinese Patent Application No. 201810763278.2 dated Dec. 4, 2019 (English translation). [cited by applicant]
Korean Office Action issued in Korean Patent Application 10-2017-0067682 dated Jun. 13, 2017 (English translation). [cited by applicant]
Non-Final Notice of Reasons for Rejection issued on Feb. 7, 2017 in the corresponding Japanese Patent Application No. 2016-095327 (English translation). [cited by applicant]
Korean Office Action dated Aug. 2, 2016, issued in Korean Patent Application No. 10-2015-0108683 (English translation). [cited by applicant]
Non-Final Office Action issued in U.S. Appl. No. 15/146,470 dated Jan. 22, 2018. [cited by applicant]
Non-Final Office Action issued in U.S. Appl. No. 15/146,470 dated Dec. 18, 2018. [cited by applicant]
Non-Final Office Action issued in U.S. Appl. No. 15/146,470 dated Jan. 13, 2020. [cited by applicant]
Final Office Action issued in U.S. Appl. No. 15/146,470 dated Aug. 9, 2018. [cited by applicant]
Final Office Action issued in U.S. Appl. No. 15/146,470 dated Aug. 30, 2019. [cited by applicant]
Final Office Action issued in U.S. Appl. No. 15/146,470 dated Jul. 9, 2020. [cited by applicant]
Notice of Allowance issued in U.S. Appl. No. 15/146,470 dated Sep. 15, 2020. [cited by applicant]
Corrected Notice of Allowance issued in U.S. Appl. No. 15/146,470 dated Sep. 23, 2020. [cited by applicant]