Semiconductor device structure with nanostructure
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first nanostructure over the substrate. The semiconductor device structure includes a gate stack over the substrate and surrounding the first nanostructure. The semiconductor device structure includes a first source/drain structure and a second source/drain structure over the substrate. The gate stack is between the first source/drain structure and the second source/drain structure. The semiconductor device structure includes an inner spacer layer covering a sidewall of the first source/drain structure and partially between the gate stack and the first source/drain structure. The first nanostructure passes through the inner spacer layer. The semiconductor device structure includes a dielectric structure over the gate stack and extending into the inner spacer layer. The dielectric structure covers a top surface, an inner wall, and a lower surface of the inner spacer layer.
1. A semiconductor device structure, comprising:
a substrate;
a first nanostructure over the substrate;
a gate stack over the substrate and surrounding the first nanostructure;
a first source/drain structure and a second source/drain structure over the substrate, wherein the gate stack is between the first source/drain structure and the second source/drain structure;
an inner spacer layer covering a sidewall of the first source/drain structure and partially between the gate stack and the first source/drain structure, wherein the first nanostructure passes through the inner spacer layer; and
a dielectric structure over the gate stack and extending into the inner spacer layer, wherein the dielectric structure covers a top surface, an inner wall, and a lower surface of the inner spacer layer.
2. The semiconductor device structure as claimed in claim 1 , wherein the dielectric structure is in direct contact with the top surface, the inner wall, and the lower surface of the inner spacer layer.
3. The semiconductor device structure as claimed in claim 1 , wherein the first source/drain structure and the second source/drain structure surround the first nanostructure.
4. The semiconductor device structure as claimed in claim 3 , further comprising:
a second nanostructure over the first nanostructure, wherein the second nanostructure has a first portion and a second portion spaced apart from each other, the first source/drain structure further surrounds the first portion, and the second source/drain structure further surrounds the second portion.
5. The semiconductor device structure as claimed in claim 4 , wherein the first portion passes through the first source/drain structure and does not extend into the inner spacer layer.
6. The semiconductor device structure as claimed in claim 4 , wherein the first portion passes through the first source/drain structure and partially extends into the inner spacer layer.
7. The semiconductor device structure as claimed in claim 1 , wherein the gate stack comprises a gate dielectric layer, a work function layer, and a gate electrode layer sequentially stacked over the first nanostructure, and the dielectric structure is in direct contact with the gate dielectric layer, the work function layer, and the gate electrode layer.
8. The semiconductor device structure as claimed in claim 1 , wherein a first distance between a first top surface of the gate stack and a second top surface of the substrate is less than a second distance between a third top surface of the first source/drain structure and the second top surface.
9. The semiconductor device structure as claimed in claim 1 , wherein the dielectric structure further extends into the first source/drain structure.
10. A semiconductor device structure, comprising:
a substrate having a base and a fin over the base;
a nanostructure over the fin;
a gate stack wrapping around the fin and the nanostructure;
a first source/drain structure and a second source/drain structure over the fin, wherein the gate stack is between the first source/drain structure and the second source/drain structure;
an inner spacer layer covering a sidewall of the first source/drain structure and partially between the gate stack and the first source/drain structure, wherein the inner spacer layer surrounds the nanostructure between the gate stack and the first source/drain structure; and
a dielectric structure over the gate stack, wherein the dielectric structure has an extension portion extending toward the first source/drain structure and in the inner spacer layer, wherein the extension portion has a curved concave surface facing the inner spacer layer.
11. The semiconductor device structure as claimed in claim 10 , wherein the extension portion extends into the first source/drain structure.
12. The semiconductor device structure as claimed in claim 11 , wherein the extension portion is wider than the inner spacer layer.
13. The semiconductor device structure as claimed in claim 11 , wherein the curved concave surface extends into the first source/drain structure.
14. The semiconductor device structure as claimed in claim 13 , wherein the curved concave surface is wider than the inner spacer layer.
15. The semiconductor device structure as claimed in claim 10 , further comprising:
a contact structure passing through the dielectric structure and connected to the gate stack.
16. A semiconductor device structure, comprising:
a plurality of first nanostructures suspended over a substrate;
a metal gate stack wrapped around the first nanostructures;
a first source/drain structure and a second source/drain structure over the substrate, wherein the gate stack is between the first source/drain structure and the second source/drain structure;
a dielectric structure over the gate stack; and
a plurality of second nanostructures over the first nanostructures, wherein each of the second nanostructures is beside the dielectric structure, the second nanostructures are wrapped around by the first source/drain structure, and the dielectric structure is in direct contact with the second nanostructures.
17. The semiconductor device structure as claimed in claim 16 , further comprising:
a plurality of third nanostructures over the first nanostructures, wherein each of the third nanostructures is beside the dielectric structure, and the third nanostructures are wrapped around by the second source/drain structure.
18. The semiconductor device structure as claimed in claim 17 , wherein the dielectric structure is in direct contact with the third nanostructures.
19. The semiconductor device structure as claimed in claim 16 , further comprising:
a conductive contact penetrating through the dielectric structure to reach the metal gate stack.
20. The semiconductor device structure as claimed in claim 19 , wherein the conductive contact extends exceeding a topmost surface and a bottommost surface of the second nanostructures.